E. Lane

497 citations

31 papers · 374 indexed · h-index 12

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Electronic Packaging and Soldering Technologies
- 3D IC and TSV technologies
- Plasma Diagnostics and Applications
- Advancements in Semiconductor Devices and Circuit Design
General Materials Science top 10%

Papers in ⓘ

Electrical and Electronic Engineering 28
- Semiconductor materials and devices 21
- Plasma Diagnostics and Applications 7
Mechanics of Materials 10
- Metal and Thin Film Mechanics 8
- Adhesion, Friction, and Surface Interactions 4

Co-authors: S. J. Pearton (18 shared papers)A. Katz (17 shared papers)K. S. Jones (6 shared papers)F. A. Baiocchi (7 shared papers)U. K. Chakrabarti (5 shared papers)S. Nakahara (8 shared papers)M. Geva (10 shared papers)W. S. Hobson (5 shared papers)
Journals: Journal of Applied Physics (9 papers)Applied Physics Letters (5 papers)Semiconductor Science and Technology (2 papers)Journal of The Electrochemical Society (2 papers)Materials Chemistry and Physics (1 paper)
Partner nations: United States Germany

In The Last Decade

E. Lane

30 papers receiving 349 citations

Peers

Countries citing papers authored by E. Lane

Since Specialization

Citations

This map shows the geographic impact of E. Lane's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Lane with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Lane more than expected).

Fields of papers citing papers by E. Lane

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Lane. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Lane. The network helps show where E. Lane may publish in the future.

Co-authors

The 25 scholars most cited alongside E. Lane, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with E. Lane Line = papers co-authored together E. Lane links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 31 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Study of Ni as a barrier metal in AuSn soldering application for laser chip/submount assembly Journal of Applied Physics ·C. H. Lee, Y.M. Wong, C. J. Doherty, K. Tai, E. Lane, D. D. Bacon, F. A. Baiocchi, A. Katz	1992	38
2	Properties of titanium nitride thin films deposited by rapid-thermal-low-pressure-metalorganic-chemical-vapor-deposition technique using tetrakis (dimethylamido) titanium precursor Journal of Applied Physics ·A. Katz, A. Feingold, S. J. Pearton, S. Nakahara, M. B. Ellington, U. K. Chakrabarti, M. Geva, E. Lane	1991	37
3	Reactive ion etching of GaAs with CCl2F2:O2: Etch rates, surface chemistry, and residual damage Journal of Applied Physics ·S. J. Pearton, M. J. Vasile, K. S. Jones, K. T. Short, E. Lane, T. R. Fullowan, A. E. Von Neida, N. M. Haegel	1989	34
4	Ti/Pt/AuSn metallization scheme for bonding of InP-based laser diodes to chemical vapor deposited diamond submounts Materials Chemistry and Physics ·A. Katz, K.W. Wang, F. A. Baiocchi, W. C. Dautremont–Smith, E. Lane, H. S. Luftman, R R Varma, H. Curnan	1993	26
5	Process and device performance of a high-speed double poly-Si bipolar technology using borosenic-poly process with coupling-base implant IEEE Transactions on Electron Devices ·T. Yamaguchi, Yi Yu, E. Lane, J.S. Lee, Evan E. Patton, R. Herman, D.R. Ahrendt, V.F. Drobny, T.H. Yuzuriha, V.E. Garuts	1988	25
6	The influence of ammonia on rapid-thermal low-pressure metalorganic chemical vapor deposited TiNx films from tetrakis (dimethylamido) titanium precursor onto InP Journal of Applied Physics ·A. Katz, A. Feingold, S. Nakahara, S. J. Pearton, E. Lane, M. Geva, F. A. Stevie, K. S. Jones	1992	25
7	Characteristics of III‐V Dry Etching In HBr ‐ Based Discharges Journal of The Electrochemical Society ·S. J. Pearton, U. K. Chakrabarti, E. Lane, A. P. Perley, C. R. Abernathy, W. S. Hobson, K. S. Jones	1992	25
8	MO/Ti bilayer metallization for a self-aligned TiSi2 process Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·H. K. Park, J. Sachitano, Gregory C. Eiden, E. Lane, T. Yamaguchi	1984	18
9	Temperature dependence of reactive ion etching of GaAs with CCl2F2:O2 Journal of Applied Physics ·S. J. Pearton, A. B. Emerson, U. K. Chakrabarti, E. Lane, K. S. Jones, K. T. Short, Alice E. White, T. R. Fullowan	1989	17
10	Wet and dry etching characteristics of Al0.5In0.5P Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·J. R. Lothian, Jonny Kuo, W. S. Hobson, E. Lane, F. Ren, S. J. Pearton	1992	17
11	Tantalum nitride films as resistors on chemical vapor deposited diamond substrates Journal of Applied Physics ·A. Katz, S. J. Pearton, S. Nakahara, F. A. Baiocchi, E. Lane, J. Kovalchick	1993	15
12	Bonding of InP laser diodes by Au-Sn solder and tungsten-based barrier metallization schemes Semiconductor Science and Technology ·C H Lee, K. Tai, D. D. Bacon, C. J. Doherty, A. Katz, Y.M. Wong, E. Lane	1994	13
13	MOS-device modeling for computer implementation IEEE Transactions on Circuit Theory ·Frank Jenkins, E. Lane, W. Lattin, W. N. Richardson	1973	11
14	Au-Sn/W and Au-Sn/Cr metallized chemical vapor deposited diamond heat sinks for InP laser device applications Journal of Applied Physics ·A. Katz, F. A. Baiocchi, E. Lane, C. H. Lee, Colin Hall, J. Doting, C. Grijsbach, K. A. Harris	1994	11
15	Plasma enhanced beam deposition of thin films at low temperatures Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·Rui Chang, S. Darack, E. Lane, Chia‐Ching Chang, David L. Allara, E. Ong	1983	8
16	Low resistance tungsten films on GaAs deposited by means of rapid thermal low pressure chemical vapor deposition Applied Physics Letters ·A. Katz, A. Feingold, S. Nakahara, S. J. Pearton, E. Lane	1992	7
17	W(Zn) selectively deposited and locally diffused ohmic contacts to p-InGaAs/InP formed by rapid thermal low pressure metalorganic chemical vapor deposition Applied Physics Letters ·A. Katz, A. El-Roy, A. Feingold, M. Geva, N. Moriya, S. J. Pearton, E. Lane, T A Keel, C. R. Abernathy	1993	7
18	Metallization Systems for Bonding of InP Laser Diodes to CVD-Diamond Submounts MRS Proceedings ·A. Katz, K‐W. Wang, F. A. Baiocchi, W. C. Dautremont–Smith, E. Lane, C -H. Lee, Y.M. Wong, K. Tai, D. D. Bacon, H. S. Luftman, R R Varma	1992	6
19	Rapid thermal processing of WSix contacts to InP in low-pressure N2:H2 and tertiarybutylphosphine ambients Journal of Applied Physics ·A. Katz, A. Feingold, S. Nakahara, S. J. Pearton, M. Geva, E. Lane, K. S. Jones	1991	5
20	Aluminum composition dependence of reactive ion etching of AlGaAs with CCl2F2:O2 Journal of Applied Physics ·S. J. Pearton, W. S. Hobson, U. K. Chakrabarti, A. B. Emerson, E. Lane, K. S. Jones	1989	5

About E. Lane

E. Lane is a scholar working on Electrical and Electronic Engineering, Mechanics of Materials, Atomic and Molecular Physics, and Optics, Condensed Matter Physics and Materials Chemistry, having authored 31 papers that have together received 374 indexed citations. Recurring topics across this work include Semiconductor materials and devices (21 papers), Metal and Thin Film Mechanics (8 papers), Plasma Diagnostics and Applications (7 papers), Semiconductor Quantum Structures and Devices (6 papers), GaN-based semiconductor devices and materials (6 papers), Semiconductor materials and interfaces (6 papers), Adhesion, Friction, and Surface Interactions (4 papers) and Copper Interconnects and Reliability (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (321 citations), General Materials Science (15 citations), Mechanics of Materials (116 citations), Atomic and Molecular Physics, and Optics (116 citations) and Surfaces, Coatings and Films (21 citations). E. Lane has collaborated with scholars based in United States and Germany. Frequent co-authors include S. J. Pearton, A. Katz, K. S. Jones, F. A. Baiocchi, U. K. Chakrabarti, S. Nakahara, M. Geva, W. S. Hobson, K. Tai and C. J. Doherty. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, Semiconductor Science and Technology, Journal of The Electrochemical Society and Materials Chemistry and Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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