E. Lane

497 total citations
31 papers, 374 citations indexed

About

E. Lane is a scholar working on Electrical and Electronic Engineering, Mechanics of Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, E. Lane has authored 31 papers receiving a total of 374 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 10 papers in Mechanics of Materials and 10 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in E. Lane's work include Semiconductor materials and devices (21 papers), Metal and Thin Film Mechanics (8 papers) and Plasma Diagnostics and Applications (7 papers). E. Lane is often cited by papers focused on Semiconductor materials and devices (21 papers), Metal and Thin Film Mechanics (8 papers) and Plasma Diagnostics and Applications (7 papers). E. Lane collaborates with scholars based in United States and Germany. E. Lane's co-authors include S. J. Pearton, A. Katz, K. S. Jones, F. A. Baiocchi, U. K. Chakrabarti, S. Nakahara, M. Geva, W. S. Hobson, K. Tai and C. J. Doherty and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

E. Lane

30 papers receiving 349 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
E. Lane United States 12 321 116 116 75 44 31 374
S. Nygren Sweden 11 295 0.9× 103 0.9× 278 2.4× 133 1.8× 52 1.2× 24 424
Chuck Ramiller United States 6 213 0.7× 99 0.9× 155 1.3× 71 0.9× 72 1.6× 6 314
G. Henein United States 9 154 0.5× 87 0.8× 137 1.2× 102 1.4× 34 0.8× 18 296
A. T. Blumenau Germany 12 278 0.9× 85 0.7× 103 0.9× 194 2.6× 29 0.7× 22 418
Andrew S. Alimonda United States 8 404 1.3× 104 0.9× 81 0.7× 189 2.5× 12 0.3× 12 459
K. E. Strege United States 11 358 1.1× 43 0.4× 343 3.0× 116 1.5× 42 1.0× 18 508
U. Lambert Germany 12 349 1.1× 59 0.5× 133 1.1× 167 2.2× 19 0.4× 34 454
P. Deimel Germany 12 229 0.7× 32 0.3× 118 1.0× 126 1.7× 99 2.3× 60 413
R. R. Kola United States 10 223 0.7× 75 0.6× 63 0.5× 80 1.1× 50 1.1× 40 311
K. Asai Japan 12 399 1.2× 30 0.3× 180 1.6× 115 1.5× 79 1.8× 47 517

Countries citing papers authored by E. Lane

Since Specialization
Citations

This map shows the geographic impact of E. Lane's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Lane with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Lane more than expected).

Fields of papers citing papers by E. Lane

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Lane. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Lane. The network helps show where E. Lane may publish in the future.

Co-authorship network of co-authors of E. Lane

This figure shows the co-authorship network connecting the top 25 collaborators of E. Lane. A scholar is included among the top collaborators of E. Lane based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Lane. E. Lane is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lane, E., et al.. (2025). Nonaqueous electrochemistry of prussian blue analogs: Synthesis, fundamental studies, and applications in battery chemistry. Coordination Chemistry Reviews. 548. 217219–217219. 1 indexed citations
2.
Lane, E., et al.. (2016). Heavy Ion and Proton Test Results for Micron 4 Gb NAND Flash Memory. 57. 1–7. 3 indexed citations
3.
4.
Katz, A., N. Moriya, S. J. Pearton, et al.. (1993). Rapid thermal low pressure metalorganic chemical vapor deposition of In0.53Ga0.47As films using tertiarybutylarsine. Applied Physics Letters. 63(19). 2679–2681. 1 indexed citations
5.
Katz, A., N. Moriya, S. Nakahara, et al.. (1993). Growth of InP epitaxial layers by rapid thermal low pressure metalorganic chemical vapor deposition, using tertiarybutylphosphine. Applied Physics Letters. 63(21). 2958–2960. 3 indexed citations
6.
Katz, A., F. A. Baiocchi, W. C. Dautremont–Smith, et al.. (1993). Ti/Pt/AuSn metallization scheme for bonding of InP-based laser diodes to chemical vapor deposited diamond submounts. Materials Chemistry and Physics. 33(3-4). 281–288. 26 indexed citations
7.
Katz, A., et al.. (1992). Tungsten metallization onto InP prepared by rapid thermal low-pressure chemical vapor deposition of WF6 and H2. Applied Physics Letters. 61(13). 1522–1524. 4 indexed citations
8.
Doherty, C. J., K. Tai, E. Lane, et al.. (1992). Study of Ni as a barrier metal in AuSn soldering application for laser chip/submount assembly. Journal of Applied Physics. 72(8). 3808–3815. 38 indexed citations
9.
Katz, A., S. Nakahara, S. J. Pearton, et al.. (1992). The influence of ammonia on rapid-thermal low-pressure metalorganic chemical vapor deposited TiNx films from tetrakis (dimethylamido) titanium precursor onto InP. Journal of Applied Physics. 71(2). 993–1000. 25 indexed citations
10.
Lothian, J. R., et al.. (1992). Wet and dry etching characteristics of Al0.5In0.5P. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(3). 1061–1065. 17 indexed citations
11.
Katz, A., et al.. (1992). Low resistance tungsten films on GaAs deposited by means of rapid thermal low pressure chemical vapor deposition. Applied Physics Letters. 61(5). 525–527. 7 indexed citations
12.
Katz, A., S. Nakahara, S. J. Pearton, et al.. (1991). Rapid thermal processing of WSix contacts to InP in low-pressure N2:H2 and tertiarybutylphosphine ambients. Journal of Applied Physics. 69(11). 7664–7673. 5 indexed citations
13.
Katz, A., S. J. Pearton, S. Nakahara, et al.. (1991). Properties of titanium nitride thin films deposited by rapid-thermal-low-pressure-metalorganic-chemical-vapor-deposition technique using tetrakis (dimethylamido) titanium precursor. Journal of Applied Physics. 70(7). 3666–3677. 37 indexed citations
14.
15.
Pearton, S. J., A. B. Emerson, U. K. Chakrabarti, et al.. (1989). Temperature dependence of reactive ion etching of GaAs with CCl2F2:O2. Journal of Applied Physics. 66(8). 3839–3849. 17 indexed citations
16.
Pearton, S. J., W. S. Hobson, U. K. Chakrabarti, et al.. (1989). Aluminum composition dependence of reactive ion etching of AlGaAs with CCl2F2:O2. Journal of Applied Physics. 66(5). 2137–2147. 5 indexed citations
17.
Yamaguchi, T., et al.. (1988). Process and device performance of a high-speed double poly-Si bipolar technology using borosenic-poly process with coupling-base implant. IEEE Transactions on Electron Devices. 35(8). 1247–1256. 25 indexed citations
18.
Eiden, Gregory C., et al.. (1984). MO/Ti bilayer metallization for a self-aligned TiSi2 process. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 2(2). 259–263. 18 indexed citations
19.
Chang, Rui, et al.. (1983). Plasma enhanced beam deposition of thin films at low temperatures. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 1(4). 935–942. 8 indexed citations
20.
Lane, E., et al.. (1973). MOS-device modeling for computer implementation. IEEE Transactions on Circuit Theory. 20(6). 649–658. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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