Jianwei Ben

1.1k total citations
63 papers, 854 citations indexed

About

Jianwei Ben is a scholar working on Condensed Matter Physics, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Jianwei Ben has authored 63 papers receiving a total of 854 indexed citations (citations by other indexed papers that have themselves been cited), including 48 papers in Condensed Matter Physics, 34 papers in Materials Chemistry and 33 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Jianwei Ben's work include GaN-based semiconductor devices and materials (48 papers), Ga2O3 and related materials (32 papers) and ZnO doping and properties (16 papers). Jianwei Ben is often cited by papers focused on GaN-based semiconductor devices and materials (48 papers), Ga2O3 and related materials (32 papers) and ZnO doping and properties (16 papers). Jianwei Ben collaborates with scholars based in China, Australia and Taiwan. Jianwei Ben's co-authors include Xiaojuan Sun, Dabing Li, Ke Jiang, Zhiming Shi, Yuping Jia, Xinke Liu, Shanli Zhang, Hang Zang, Yang Chen and Wei Lü and has published in prestigious journals such as Advanced Materials, Nano Letters and Applied Physics Letters.

In The Last Decade

Jianwei Ben

56 papers receiving 818 citations

Peers

Jianwei Ben

CMP

EOMM

EEE

Tak Jeong South Korea

Yuping Jia China

Hogyoung Kim South Korea

Huolin Huang China

Jordan D. Greenlee United States

Jijie Huang United States

Rosa Chierchia Italy

Jeonghyun Hwang United States

Shui-Jinn Wang Taiwan

Sakari Sintonen Finland

Tak Jeong South Korea

Jianwei Ben

436 ×0.9

CMP

246 ×0.6

EOMM

453 ×1.2

269 ×0.9

376 ×1.3

EEE

Citations per year, relative to Jianwei Ben Jianwei Ben (= 1×) peers Tak Jeong

Countries citing papers authored by Jianwei Ben

Since Specialization

Citations

This map shows the geographic impact of Jianwei Ben's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jianwei Ben with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jianwei Ben more than expected).

Fields of papers citing papers by Jianwei Ben

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jianwei Ben. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jianwei Ben. The network helps show where Jianwei Ben may publish in the future.

Co-authorship network of co-authors of Jianwei Ben

This figure shows the co-authorship network connecting the top 25 collaborators of Jianwei Ben. A scholar is included among the top collaborators of Jianwei Ben based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jianwei Ben. Jianwei Ben is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Liu, Mingrui, Dan Li, Zhongran Liu, et al.. (2025). Low‐Field‐Driven Domain Wall Motion in Wurtzite Ferroelectrics. Advanced Materials. 37(37). e2505988–e2505988. 1 indexed citations

Chen, Yang, Yuanyuan Yue, Jin Zhang, et al.. (2025). van der Waals Epitaxy of Mechanically Separable AlN with Enhanced Crystalline Quality by Using a Double-Buffer-Layer Insertion. Crystal Growth & Design. 25(10). 3317–3327. 1 indexed citations

Ben, Jianwei, Zhiming Shi, Shunpeng Lü, et al.. (2024). Regulation of oxygen defects in AlGaN-based epilayers grown on high temperature annealed AlN template. Materials Letters. 369. 136671–136671. 1 indexed citations

Wu, Yu, Zirui Zhang, Zhongyu Liu, et al.. (2024). AlGaN Based Deep Ultraviolet LED for Inactivating Coxsackie Virus. Chinese Journal of Luminescence. 45(8). 1391–1397. 1 indexed citations

Jiang, Ke, Shanli Zhang, Jianwei Ben, et al.. (2024). Impact of the number of well-barrier pair in the MQWs on the carrier distribution and confinement for the AlGaN-based far-UVC LEDs. Optical Materials Express. 14(6). 1644–1644.

Chen, Yang, Zhiming Shi, Wei Zhang, et al.. (2024). In Situ Growth of Wafer‐Scale Patterned Graphene and Fabrication of Optoelectronic Artificial Synaptic Device Array Based on Graphene/n‐AlGaN Heterojunction for Visual Learning. Small. 20(34). e2401150–e2401150. 2 indexed citations

Wang, Bingxiang, Ke Jiang, Shanli Zhang, et al.. (2024). Realizing high zero-bias gain in a GaN-based bipolar phototransistor through thin-base configuration for ultraviolet imaging. Journal of Materials Chemistry C. 12(7). 2459–2469. 5 indexed citations

Chen, Yuxuan, Ke Jiang, Bingxiang Wang, et al.. (2024). Solar-blind ultraviolet emission-detection monolithic integration of AlGaN multiple-quantum-well diodes via concentric ring-circle configuration. Applied Physics Letters. 124(16). 3 indexed citations

Liu, Kexi, Ke Jiang, Jianwei Ben, et al.. (2024). Highly reflective Ni/Pt/Al p-electrode for improving the efficiency of an AlGaN-based deep ultraviolet light-emitting diode. Optics Letters. 49(14). 4030–4030. 5 indexed citations

10.

Li, Hongbo, Shunpeng Lü, Wenchao Sun, et al.. (2024). Efficiency boosting of 236 nm AlGaN-based micro-LEDs. Journal of Physics D Applied Physics. 58(1). 15109–15109. 2 indexed citations

11.

Ben, Jianwei, Xiaojuan Sun, Zhiming Shi, et al.. (2023). The AlN lattice-polarity inversion in a high-temperature-annealed c-oriented AlN/sapphire originated from the diffusion of Al and O atoms from sapphire. Nanoscale Advances. 6(2). 418–427. 6 indexed citations

12.

Chen, Yang, Zhiming Shi, Shanli Zhang, et al.. (2023). Centimeter-Transferable III-Nitride Membrane Enabled by Interfacial Adhesion Control for a Flexible Photosensitive Device. ACS Applied Materials & Interfaces. 15(26). 31954–31965. 2 indexed citations

13.

Sun, Xiaojuan, Jianwei Ben, Hang Zang, et al.. (2023). The stacking fault annihilation in a-plane AlN during high-temperature annealing. CrystEngComm. 25(13). 1903–1909. 2 indexed citations

14.

Chen, Yang, Hang Zang, Jianwei Ben, et al.. (2022). AlGaN UV Detector with Largely Enhanced Heat Dissipation on Mo Substrate Enabled by van der Waals Epitaxy. Crystal Growth & Design. 23(2). 1162–1171. 2 indexed citations

15.

Chen, Yang, Hang Zang, Shanli Zhang, et al.. (2022). Van der Waals Epitaxy of c-Oriented Wurtzite AlGaN on Polycrystalline Mo Substrates for Enhanced Heat Dissipation. ACS Applied Materials & Interfaces. 14(33). 37947–37957. 7 indexed citations

16.

Jiang, Ke, Xiaojuan Sun, Yuxuan Chen, et al.. (2021). Three-dimensional metal–semiconductor–metal bipolar ultraviolet phototransistor based on GaN p-i-n epilayer. Applied Physics Letters. 119(16). 16 indexed citations

17.

Zang, Hang, Jianwei Ben, Ke Jiang, et al.. (2021). Origination and evolution of point defects in AlN film annealed at high temperature. Journal of Luminescence. 235. 118032–118032. 40 indexed citations

18.

Chen, Yang, You Wu, Jianwei Ben, et al.. (2021). A high-response ultraviolet photodetector by integrating GaN nanoparticles with graphene. Journal of Alloys and Compounds. 868. 159281–159281. 20 indexed citations

19.

Pu, Taofei, Yong Chen, Xiaobo Li, et al.. (2020). Gate structure dependent normally-off AlGaN/GaN heterostructure field-effect transistors with p-GaN cap layer. Journal of Physics D Applied Physics. 53(41). 415104–415104. 9 indexed citations

20.

Sun, Xiaojuan, Yuping Jia, Ke Jiang, et al.. (2020). Characterization of carrier transport behavior of specific type dislocations in GaN by light assisted KPFM. Journal of Physics D Applied Physics. 53(23). 235104–235104. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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