Örjan Danielsson

783 total citations
41 papers, 629 citations indexed

About

Örjan Danielsson is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Condensed Matter Physics. According to data from OpenAlex, Örjan Danielsson has authored 41 papers receiving a total of 629 indexed citations (citations by other indexed papers that have themselves been cited), including 38 papers in Electrical and Electronic Engineering, 16 papers in Electronic, Optical and Magnetic Materials and 5 papers in Condensed Matter Physics. Recurrent topics in Örjan Danielsson's work include Silicon Carbide Semiconductor Technologies (33 papers), Semiconductor materials and devices (27 papers) and Copper Interconnects and Reliability (13 papers). Örjan Danielsson is often cited by papers focused on Silicon Carbide Semiconductor Technologies (33 papers), Semiconductor materials and devices (27 papers) and Copper Interconnects and Reliability (13 papers). Örjan Danielsson collaborates with scholars based in Sweden, Iceland and Germany. Örjan Danielsson's co-authors include Erik Janzén, Anne Henry, Urban Forsberg, Lars Ojamäe, Henrik Pedersen, Margareta K. Linnarsson, Olof Kordina, Xun Li, Ivan G. Ivanov and Daniel Nilsson and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Chemistry of Materials.

In The Last Decade

Örjan Danielsson

40 papers receiving 613 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Örjan Danielsson Sweden 16 506 216 163 120 70 41 629
Franziska C. Beyer Sweden 17 467 0.9× 224 1.0× 120 0.7× 131 1.1× 45 0.6× 45 585
Shoichi Onda Japan 14 643 1.3× 108 0.5× 167 1.0× 83 0.7× 105 1.5× 40 760
V. Balakrishna United States 11 401 0.8× 171 0.8× 260 1.6× 53 0.4× 54 0.8× 20 575
Masatoshi Kanaya Japan 15 620 1.2× 139 0.6× 102 0.6× 43 0.4× 125 1.8× 27 689
Tatsuo Fujimoto Japan 15 526 1.0× 180 0.8× 85 0.5× 49 0.4× 127 1.8× 57 643
S. Nishino Japan 11 403 0.8× 121 0.6× 135 0.8× 21 0.2× 54 0.8× 39 493
Jean Camassel France 15 628 1.2× 139 0.6× 341 2.1× 40 0.3× 55 0.8× 107 855
M. Wzorek Poland 14 405 0.8× 157 0.7× 228 1.4× 83 0.7× 22 0.3× 71 544
M. F. MacMillan United States 16 672 1.3× 181 0.8× 182 1.1× 155 1.3× 51 0.7× 50 813
Kazuo Mukae Japan 10 508 1.0× 163 0.8× 682 4.2× 58 0.5× 38 0.5× 26 778

Countries citing papers authored by Örjan Danielsson

Since Specialization
Citations

This map shows the geographic impact of Örjan Danielsson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Örjan Danielsson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Örjan Danielsson more than expected).

Fields of papers citing papers by Örjan Danielsson

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Örjan Danielsson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Örjan Danielsson. The network helps show where Örjan Danielsson may publish in the future.

Co-authorship network of co-authors of Örjan Danielsson

This figure shows the co-authorship network connecting the top 25 collaborators of Örjan Danielsson. A scholar is included among the top collaborators of Örjan Danielsson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Örjan Danielsson. Örjan Danielsson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Danielsson, Örjan, et al.. (2020). A Systematic Method for Predictive In Silico Chemical Vapor Deposition. The Journal of Physical Chemistry C. 124(14). 7725–7736. 14 indexed citations
2.
Pedersen, Henrik, Lars Ojamäe, & Örjan Danielsson. (2020). Perspective—Current Understanding of the Halogenated Deposition Chemistry for Chemical Vapor Deposition of SiC. ECS Journal of Solid State Science and Technology. 9(10). 104006–104006. 4 indexed citations
3.
Karhu, Robin, E.Ö. Sveinbjörnsson, Björn Magnusson, et al.. (2019). CVD growth and properties of on-axis vanadium doped semi-insulating 4H-SiC epilayers. Journal of Applied Physics. 125(4). 11 indexed citations
4.
Danielsson, Örjan, et al.. (2018). Growth Mechanism of SiC CVD: Surface Etching by H2, H Atoms, and HCl. The Journal of Physical Chemistry A. 122(9). 2503–2512. 13 indexed citations
5.
Kordina, Olof, et al.. (2017). Silicon Chemistry in Fluorinated Chemical Vapor Deposition of Silicon Carbide. The Journal of Physical Chemistry C. 121(5). 2711–2720. 15 indexed citations
6.
Bergsten, Johan, Daniel Nilsson, Örjan Danielsson, et al.. (2016). AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor. Japanese Journal of Applied Physics. 55(5S). 05FK02–05FK02. 8 indexed citations
7.
Danielsson, Örjan, et al.. (2016). Ab Initio Study of Growth Mechanism of 4H–SiC: Adsorption and Surface Reaction of C2H2, C2H4, CH4, and CH3. The Journal of Physical Chemistry C. 121(2). 1249–1256. 25 indexed citations
8.
Danielsson, Örjan, Daniel Nilsson, Ivan G. Ivanov, et al.. (2015). Brominated Chemistry for Chemical Vapor Deposition of Electronic Grade SiC. Chemistry of Materials. 27(3). 793–801. 9 indexed citations
9.
Danielsson, Örjan, Xun Li, Lars Ojamäe, et al.. (2015). A model for carbon incorporation from trimethyl gallium in chemical vapor deposition of gallium nitride. Journal of Materials Chemistry C. 4(4). 863–871. 23 indexed citations
10.
Pedersen, Henrik, et al.. (2014). On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide. Journal of Crystal Growth. 390. 24–29. 21 indexed citations
11.
Danielsson, Örjan, et al.. (2013). Shortcomings of CVD modeling of SiC today. Theoretical Chemistry Accounts. 132(11). 16 indexed citations
12.
Danielsson, Örjan, et al.. (2013). Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC. Materials science forum. 740-742. 213–216. 2 indexed citations
13.
Leone, Stefano, Olof Kordina, Anne Henry, et al.. (2012). Gas-Phase Modeling of Chlorine-Based Chemical Vapor Deposition of Silicon Carbide. Crystal Growth & Design. 12(4). 1977–1984. 25 indexed citations
14.
Danielsson, Örjan, C. Hallin, & Erik Janzén. (2003). Reducing stress in silicon carbide epitaxial layers. Journal of Crystal Growth. 252(1-3). 289–296. 10 indexed citations
15.
Danielsson, Örjan, Urban Forsberg, Anne Henry, & Erik Janzén. (2002). Investigation of the temperature profile in a hot-wall SiC chemical vapor deposition reactor. Journal of Crystal Growth. 235(1-4). 352–364. 22 indexed citations
16.
Danielsson, Örjan, S. K. M. Jönsson, Anne Henry, & Erik Janzén. (2002). Predicting Growth Rates of SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition. Materials science forum. 389-393. 219–222. 3 indexed citations
17.
Forsberg, Urban, Örjan Danielsson, Anne Henry, Margareta K. Linnarsson, & Erik Janzén. (2002). Aluminum Doping of Epitaxial Silicon Carbide Grown by Hot-Wall CVD; Effect of Process Parameters. Materials science forum. 389-393. 203–206. 5 indexed citations
18.
Zhang, Jie, Alexsandre Ellison, Örjan Danielsson, Anne Henry, & Erik Janzén. (2001). Epitaxial Growth of 4H-SiC in a Vertical Hot-Wall CVD Reactor: Comparison between Up- and Down-Flow Orientations. Materials science forum. 353-356. 91–94. 1 indexed citations
19.
Forsberg, Urban, Anne Henry, Örjan Danielsson, et al.. (2000). Growth and Characterisation of 4H-SiC MESFET structures grown by Hot-Wall CVD. MRS Proceedings. 640. 1 indexed citations
20.
Danielsson, Örjan, et al.. (1983). Oxygen pulping of non-wood plant fibers according to the NACO process.. 77–86. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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