Tommy Ive

726 total citations
32 papers, 615 citations indexed

About

Tommy Ive is a scholar working on Condensed Matter Physics, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Tommy Ive has authored 32 papers receiving a total of 615 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Condensed Matter Physics, 20 papers in Materials Chemistry and 15 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Tommy Ive's work include GaN-based semiconductor devices and materials (27 papers), ZnO doping and properties (17 papers) and Ga2O3 and related materials (15 papers). Tommy Ive is often cited by papers focused on GaN-based semiconductor devices and materials (27 papers), ZnO doping and properties (17 papers) and Ga2O3 and related materials (15 papers). Tommy Ive collaborates with scholars based in Sweden, United States and Germany. Tommy Ive's co-authors include M. Venkata Kamalakar, Saroj P. Dash, Johan Bergsten, André Dankert, O. Brandt, James S. Speck, K. H. Ploog, Chris G. Van de Walle, H. Kostial and Oliver Bierwagen and has published in prestigious journals such as Applied Physics Letters, Physical Review B and Scientific Reports.

In The Last Decade

Tommy Ive

32 papers receiving 610 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Tommy Ive Sweden 13 426 277 252 205 205 32 615
I. Halidou Tunisia 15 381 0.9× 318 1.1× 346 1.4× 100 0.5× 157 0.8× 41 570
C. R. Staddon United Kingdom 14 385 0.9× 296 1.1× 194 0.8× 234 1.1× 276 1.3× 49 618
H.‐H. Wehmann Germany 16 369 0.9× 299 1.1× 305 1.2× 190 0.9× 232 1.1× 44 653
Vitaly Z. Zubialevich Ireland 14 228 0.5× 421 1.5× 192 0.8× 155 0.8× 251 1.2× 70 552
Sg. Fujita Japan 16 556 1.3× 372 1.3× 397 1.6× 293 1.4× 305 1.5× 42 859
Zhaoquan Zeng China 17 555 1.3× 108 0.4× 300 1.2× 140 0.7× 244 1.2× 34 644
Ho Ki Kwon South Korea 15 202 0.5× 407 1.5× 314 1.2× 205 1.0× 189 0.9× 33 579
M. Neumann Germany 12 316 0.7× 183 0.7× 211 0.8× 90 0.4× 206 1.0× 15 484
B. Schineller Germany 14 252 0.6× 497 1.8× 307 1.2× 279 1.4× 233 1.1× 72 640
C. H. Swartz United States 14 421 1.0× 282 1.0× 469 1.9× 208 1.0× 209 1.0× 40 707

Countries citing papers authored by Tommy Ive

Since Specialization
Citations

This map shows the geographic impact of Tommy Ive's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tommy Ive with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tommy Ive more than expected).

Fields of papers citing papers by Tommy Ive

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tommy Ive. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tommy Ive. The network helps show where Tommy Ive may publish in the future.

Co-authorship network of co-authors of Tommy Ive

This figure shows the co-authorship network connecting the top 25 collaborators of Tommy Ive. A scholar is included among the top collaborators of Tommy Ive based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tommy Ive. Tommy Ive is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hashemi, Ehsan, et al.. (2018). Vertical Electrical Conductivity of ZnO/GaN Multilayers for Application in Distributed Bragg Reflectors. IEEE Journal of Quantum Electronics. 54(4). 1–6. 1 indexed citations
2.
Hashemi, Ehsan, et al.. (2017). Electrically conductive ZnO/GaN distributed Bragg reflectors grown by hybrid plasma-assisted molecular beam epitaxy. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 10104. 1010413–1010413. 1 indexed citations
3.
Zamani, Reza R., et al.. (2016). Hybrid ZnO/GaN distributed Bragg reflectors grown by plasma-assisted molecular beam epitaxy. APL Materials. 4(8). 86106–86106. 7 indexed citations
4.
Andersson, T. G., et al.. (2015). Plasma-assisted molecular beam epitaxy of ZnO on in-situ grown GaN/4H-SiC buffer layers. Frontiers of Materials Science. 9(2). 185–191. 1 indexed citations
5.
Ive, Tommy, et al.. (2015). Growth of ZnO(0001) on GaN(0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy. Journal of Crystal Growth. 426. 129–134. 9 indexed citations
6.
Kamalakar, M. Venkata, André Dankert, Johan Bergsten, Tommy Ive, & Saroj P. Dash. (2014). Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride. Scientific Reports. 4(1). 6146–6146. 131 indexed citations
7.
Ive, Tommy, et al.. (2014). Nucleation and epitaxial growth of ZnO on GaN(0001). Applied Surface Science. 307. 438–443. 14 indexed citations
8.
Sun, Jie, Matthew T. Cole, Olof Bäcke, et al.. (2012). Direct Chemical Vapor Deposition of Large-Area Carbon Thin Films on Gallium Nitride for Transparent Electrodes: A First Attempt. IEEE Transactions on Semiconductor Manufacturing. 25(3). 494–501. 22 indexed citations
9.
Ive, Tommy, et al.. (2012). Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology. Japanese Journal of Applied Physics. 51(1S). 01AG07–01AG07. 2 indexed citations
10.
Ive, Tommy, et al.. (2009). Properties of In-Doped ZnO Films Grown by Metalorganic Chemical Vapor Deposition on GaN(0001) Templates. Journal of Electronic Materials. 39(5). 608–611. 18 indexed citations
11.
Bierwagen, Oliver, Takahiro Nagata, Tommy Ive, Chris G. Van de Walle, & James S. Speck. (2009). Dissipation-factor-based criterion for the validity of carrier-type identification by capacitance-voltage measurements. Applied Physics Letters. 94(15). 11 indexed citations
12.
Ive, Tommy, et al.. (2008). Step-flow growth of ZnO(0001) on GaN(0001) by metalorganic chemical vapor epitaxy. Journal of Crystal Growth. 310(15). 3407–3412. 22 indexed citations
13.
Ive, Tommy, et al.. (2008). Properties of ZnO(0001) layers grown by metalorganic chemical vapor deposition on GaN(0001) templates. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 1733–1735. 1 indexed citations
14.
Ive, Tommy, Akihiko Murai, Chris G. Van de Walle, et al.. (2008). Metalorganic chemical vapor deposition of ZnO(0001) thin films on GaN(0001) templates and ZnO(0001) substrates. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(9). 3091–3094. 11 indexed citations
15.
Ive, Tommy, O. Brandt, Xiang Kong, A. Trampert, & K. H. Ploog. (2008). (Al,In)N layers and (Al,In)N/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on6H-SiC(0001). Physical Review B. 78(3). 19 indexed citations
16.
Bierwagen, Oliver, Tommy Ive, Chris G. Van de Walle, & James S. Speck. (2008). Causes of incorrect carrier-type identification in van der Pauw–Hall measurements. Applied Physics Letters. 93(24). 79 indexed citations
17.
Pedrós, Jorge, Y. Takagaki, Tommy Ive, et al.. (2007). Exciton impact-ionization dynamics modulated by surface acoustic waves in GaN. Physical Review B. 75(11). 15 indexed citations
18.
Rivera, C., J. L. Pau, Enrique Muñoz, Tommy Ive, & O. Brandt. (2006). Photocapacitance characteristics of (In,Ga)N/GaN MQW structures. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(6). 1978–1982. 2 indexed citations
19.
Ive, Tommy, O. Brandt, H. Kostial, et al.. (2004). Crack-free and conductive Si-doped AlN∕GaN distributed Bragg reflectors grown on 6H-SiC(0001). Applied Physics Letters. 85(11). 1970–1972. 40 indexed citations
20.
Ive, Tommy, O. Brandt, M. Ramsteiner, et al.. (2004). Properties of InN layers grown on 6H–SiC(0001) by plasma-assisted molecular beam epitaxy. Applied Physics Letters. 84(10). 1671–1673. 45 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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