D. Landheer

3.2k total citations
149 papers, 2.6k citations indexed

About

D. Landheer is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, D. Landheer has authored 149 papers receiving a total of 2.6k indexed citations (citations by other indexed papers that have themselves been cited), including 118 papers in Electrical and Electronic Engineering, 71 papers in Atomic and Molecular Physics, and Optics and 50 papers in Materials Chemistry. Recurrent topics in D. Landheer's work include Semiconductor materials and devices (74 papers), Semiconductor Quantum Structures and Devices (38 papers) and Semiconductor materials and interfaces (24 papers). D. Landheer is often cited by papers focused on Semiconductor materials and devices (74 papers), Semiconductor Quantum Structures and Devices (38 papers) and Semiconductor materials and interfaces (24 papers). D. Landheer collaborates with scholars based in Canada, United States and Taiwan. D. Landheer's co-authors include M. Jamal Deen, M. Waleed Shinwari, M. Buchanan, G. I. Sproule, G. C. Aers, Juan C. Ranuárez, Xiaohua Wu, W. R. McKinnon, David Zhitomirsky and Imran A. Deen and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

D. Landheer

146 papers receiving 2.5k citations

Peers

Countries citing papers authored by D. Landheer

Since Specialization

Citations

This map shows the geographic impact of D. Landheer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Landheer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Landheer more than expected).

Fields of papers citing papers by D. Landheer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Landheer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Landheer. The network helps show where D. Landheer may publish in the future.

Co-authorship network of co-authors of D. Landheer

This figure shows the co-authorship network connecting the top 25 collaborators of D. Landheer. A scholar is included among the top collaborators of D. Landheer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Landheer. D. Landheer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Interfacial growth in HfOxNy gate dielectrics deposited using [(C2H5)2N]4Hf with O2 and NO 2003 ·Applied Physics Letters ·(unknown), Zheng Lu, Wai Tung Ng, D. Landheer, Xiaohua Wu, S. Moisa	56
2	Ultrathin Zirconium Silicate Films Deposited on Si(100) Using Zr(O[sup i]-Pr)[sub 2](thd)[sub 2], Si(O[sup t]-Bu)[sub 2](thd)[sub 2], and Nitric Oxide 2003 ·Journal of The Electrochemical Society ·(unknown), T.Y. Huang, D. Landheer, Xiaohua Wu, S. Moisa, G. I. Sproule, (unknown), W.N. Lennard, (unknown)	5
3	Characterization of thin ZrO2 films deposited using (ZrOi–Pr)2(thd)2 and O2 on Si(100) 2002 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·(unknown), D. Landheer, Xiaogang Wu, S. Moisa, G. I. Sproule, (unknown), T.Y. Huang	7
4	Fourier transform infrared spectroscopy of corona-processed silicon dioxide films 1998 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·D. Landheer, (unknown), L. M. Landsberger, (unknown)	3
5	Bonding at the CdSe/SiOx (x=0,1,2) interfaces 1998 ·Journal of Applied Physics ·Denis Masson, D. Landheer, (unknown), John Hulse	4
6	Mechanisms of Film Growth Rate Enhancement in Anodic and Cathodic Corona‐Discharge Oxiation Processes 1998 ·Journal of The Electrochemical Society ·(unknown), D. Landheer, L. M. Landsberger, (unknown)	1
7	Sulphur diffusion at the Si/GaAs(110) interface 1996 ·Journal of Applied Physics ·Hengchuan Xia, W. N. Lennard, L. J. Huang, Woon‐Ming Lau, J.‐M. Baribeau, D. Landheer	1
8	Low‐temperature low‐stress silicon nitride for optoelectronic Applications prepared by electron cyclotron resonance plasma Chemical‐vapor deposition 1996 ·MRS Proceedings ·(unknown), D. Landheer, R. C. Taylor, (unknown), G. I. Sproule	1
9	Effect of power on interface and electrical properties of SiO2 films produced by plasma-enhanced chemical-vapor deposition 1995 ·Journal of Applied Physics ·D. Landheer, Dan‐Xia Xu, Ye Tao, G. I. Sproule	10
10	Metal-insulator-semiconductor capacitors on cleaved GaAs(110) 1994 ·Journal of Applied Physics ·L. J. Huang, Woon‐Ming Lau, S. Ingrey, D. Landheer, J.-P. Noël	8
11	Polarization dependence of the temporal response of metal-semiconductor-metal photodetectors 1994 ·Applied Physics Letters ·(unknown), H. M. van Driel, D. Landheer, Yan Feng	11
12	Reibung und Verschleiss von PTFE-Compounds 1993 ·TU/e Research Portal (Eindhoven University of Technology) ·D. Landheer, (unknown)	3
13	High-speed photodetection in a reverse biased GaAs/AlGaAs GRINSCH SQW laser structure 1992 ·IEEE Photonics Technology Letters ·David Moss, D. Landheer, (unknown), D. P. Halliday, S. Charbonneau, G. C. Aers, (unknown), F. Chatenoud	11
14	Laser-compatible GaAs/AlGaAs single quantum-well waveguide electroabsorption modulator with an on/off ratio of 25 dB 1991 ·Conference on Lasers and Electro-Optics ·David Moss, D. Landheer, M. Dion, A. Delâge, F. Chatenoud	1
15	Transport measurements of resonant-tunneling widths 1991 ·Physical review. B, Condensed matter ·(unknown), M. Buchanan, G. C. Aers, Z. R. Wasilewski, (unknown), R. L. S. Devine, D. Landheer	10
16	Noise characteristics of a Si/SiGe resonant tunneling diode 1989 ·Solid-State Electronics ·(unknown), Jingming Xu, H.C. Liu, D. Landheer, M. Buchanan, D. C. Houghton	1
17	Evidence for an inhomogeneity size effect in narrowGaAs/AlxGa1−xAsconstrictions 1989 ·Physical review. B, Condensed matter ·A. S. Sachrajda, D. Landheer, (unknown), Terrence J. Moore	17
18	Effect of circuit oscillations on the dc current-voltage characteristics of double barrier resonant tunneling structures 1988 ·Applied Physics Letters ·Jeff F. Young, Barry Wood, (unknown), M. Buchanan, D. Landheer, A. J. SpringThorpe, P. Mandeville	55
19	NbN thin films reactively sputtered with a high‐field direct‐current magnetron 1988 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·M. Jamal Deen, D. Landheer, (unknown), G. I. Sproule, (unknown)	8
20	Elastic constants of krypton single crystals determined by Brillouin scattering 1976 ·Physical review. B, Solid state ·D. Landheer, Howard E. Jackson, R. McLaren, B. P. Stoicheff	21

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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