H. Schroeder

2.7k total citations
89 papers, 2.2k citations indexed

About

H. Schroeder is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Mechanical Engineering. According to data from OpenAlex, H. Schroeder has authored 89 papers receiving a total of 2.2k indexed citations (citations by other indexed papers that have themselves been cited), including 53 papers in Materials Chemistry, 42 papers in Electrical and Electronic Engineering and 29 papers in Mechanical Engineering. Recurrent topics in H. Schroeder's work include Nuclear Materials and Properties (27 papers), Fusion materials and technologies (25 papers) and Advanced Memory and Neural Computing (14 papers). H. Schroeder is often cited by papers focused on Nuclear Materials and Properties (27 papers), Fusion materials and technologies (25 papers) and Advanced Memory and Neural Computing (14 papers). H. Schroeder collaborates with scholars based in Germany, United States and Austria. H. Schroeder's co-authors include Doo Seok Jeong, Rainer Waser, H. Ullmaier, U. Breuer, W. Kesternich, Peter Batfalsky, D. N. Braski, P.F.P. Fichtner, P. Meuffels and V.V. Zhirnov and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

H. Schroeder

89 papers receiving 2.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. Schroeder Germany 26 1.3k 1.2k 382 377 282 89 2.2k
Dershin Gan Taiwan 21 756 0.6× 590 0.5× 76 0.2× 228 0.6× 179 0.6× 69 1.2k
Di Chen United States 21 399 0.3× 1.1k 0.9× 101 0.3× 103 0.3× 343 1.2× 58 1.5k
Yoosuf N. Picard United States 24 816 0.6× 703 0.6× 64 0.2× 90 0.2× 283 1.0× 85 1.6k
Shinbuhm Lee South Korea 33 2.4k 1.8× 1.5k 1.3× 505 1.3× 1.1k 2.8× 98 0.3× 94 3.4k
David Cooper France 26 1.2k 0.9× 661 0.5× 75 0.2× 91 0.2× 88 0.3× 136 2.3k
Y. Ségui France 22 716 0.5× 477 0.4× 32 0.1× 211 0.6× 67 0.2× 63 1.2k
Dooho Choi South Korea 20 918 0.7× 529 0.4× 81 0.2× 236 0.6× 88 0.3× 53 1.2k
Takeshi Kawano Japan 21 666 0.5× 309 0.3× 563 1.5× 173 0.5× 148 0.5× 140 1.6k
C. M. Gilmore United States 18 2.1k 1.5× 2.3k 1.8× 20 0.1× 376 1.0× 175 0.6× 59 3.2k
C. Vallée France 30 2.1k 1.6× 1.5k 1.2× 99 0.3× 211 0.6× 162 0.6× 133 2.9k

Countries citing papers authored by H. Schroeder

Since Specialization
Citations

This map shows the geographic impact of H. Schroeder's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Schroeder with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Schroeder more than expected).

Fields of papers citing papers by H. Schroeder

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Schroeder. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Schroeder. The network helps show where H. Schroeder may publish in the future.

Co-authorship network of co-authors of H. Schroeder

This figure shows the co-authorship network connecting the top 25 collaborators of H. Schroeder. A scholar is included among the top collaborators of H. Schroeder based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Schroeder. H. Schroeder is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Schroeder, H., et al.. (2012). Properties of TaSiN thin films deposited by reactive radio frequency magnetron sputtering. Thin Solid Films. 520(13). 4497–4500. 7 indexed citations
2.
Jeong, Doo Seok, H. Schroeder, & Rainer Waser. (2009). Abnormal bipolar-like resistance change behavior induced by symmetric electroforming in Pt/TiO2/Pt resistive switching cells. Nanotechnology. 20(37). 375201–375201. 30 indexed citations
3.
Kügeler, C., H. Schroeder, R. Symanczyk, et al.. (2009). Study on the dynamic resistance switching properties of NiO thin films. Thin Solid Films. 518(8). 2258–2260. 17 indexed citations
4.
Jeong, Doo Seok, H. Schroeder, U. Breuer, & Rainer Waser. (2008). Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere. Journal of Applied Physics. 104(12). 252 indexed citations
5.
Spiecker, Erdmann, et al.. (2005). Self-Assembled Nanostructures on VSe2Surfaces Induced by Cu Deposition. Microscopy and Microanalysis. 11(5). 456–471. 1 indexed citations
6.
Schroeder, H., et al.. (2004). Leakage current through high permittivity thin films. Annalen der Physik. 13(12). 90–92. 3 indexed citations
7.
Schroeder, H., et al.. (2002). Leakage Current Measurements of STO and BST Thin Films Interpreted by the "Dead" Layer Model. Integrated ferroelectrics. 46(1). 233–242. 5 indexed citations
8.
Steinlesberger, G., et al.. (2001). Dielectric relaxation and charge transport mechanisms in (Ba,Sr)TiO3 thin films. Integrated ferroelectrics. 38(1-4). 249–258. 6 indexed citations
9.
Reisinger, H., G. Steinlesberger, H. Schroeder, et al.. (2001). Interfacial layers and their effect on leakage current in mocvd-deposited SBT thin films. Integrated ferroelectrics. 39(1-4). 189–198. 3 indexed citations
10.
Hartner, Walter, G. Schindler, H. Schroeder, et al.. (2000). Degradation mechanisms of SrBi2Ta2O9 ferroelectric thin film capacitors during forming gas annealing. Integrated ferroelectrics. 31(1-4). 341–350. 6 indexed citations
11.
Dai, Yong & H. Schroeder. (1995). Creep properties and microstructures of helium implanted AISI 316L electron-beam weld and parent material. Fusion Engineering and Design. 30(3). 261–273. 4 indexed citations
12.
Schneegans, M., et al.. (1994). Thermal Stresses in Passivated AlSiCu-Lines From Wafer Curvature Measurement. MRS Proceedings. 356. 5 indexed citations
13.
Schroeder, H., et al.. (1994). Helium bubble formation in nickel during hot implantation. Journal of Nuclear Materials. 212-215. 358–363. 32 indexed citations
14.
Dai, Yong & H. Schroeder. (1992). Helium effects on the post-implantation creep properties and the microstructure of AISI 316L welds and parent material. Journal of Nuclear Materials. 191-194. 754–758. 6 indexed citations
15.
Schroeder, H. & H. Ullmaier. (1991). Helium and hydrogen effects on the embrittlement of iron- and nickel-based alloys. Journal of Nuclear Materials. 179-181. 118–124. 58 indexed citations
16.
Jung, Peter & H. Schroeder. (1991). Thermal desorption of helium from homogeneously implanted graphite. Journal of Nuclear Materials. 185(2). 149–153. 5 indexed citations
17.
Syskakis, E., Yoshiko Fujii, F. Pobell, & H. Schroeder. (1990). Heat capacity of microscopic liquid3He droplets in silver. Journal of Low Temperature Physics. 79(5-6). 341–359. 8 indexed citations
18.
Kesternich, W., N.H. Packan, & H. Schroeder. (1986). Radiation-induced segregation to grain boundaries in a Ni-Si alloy. 3(1). 40–5. 1 indexed citations
19.
Packan, N.H., H. Schroeder, & W. Kesternich. (1986). The influence of radiation-induced segregation on ductility of a nickel-silicon alloy. Journal of Nuclear Materials. 141-143. 553–558. 8 indexed citations
20.
Jung, Peter, et al.. (1978). Creep and creep rupture of thin stainless steel specimens. Journal of Nuclear Materials. 74(2). 348–350. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026