Yuye Kang

975 total citations
68 papers, 706 citations indexed

About

Yuye Kang is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Yuye Kang has authored 68 papers receiving a total of 706 indexed citations (citations by other indexed papers that have themselves been cited), including 63 papers in Electrical and Electronic Engineering, 21 papers in Materials Chemistry and 10 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Yuye Kang's work include Semiconductor materials and devices (45 papers), Ferroelectric and Negative Capacitance Devices (22 papers) and Advancements in Semiconductor Devices and Circuit Design (19 papers). Yuye Kang is often cited by papers focused on Semiconductor materials and devices (45 papers), Ferroelectric and Negative Capacitance Devices (22 papers) and Advancements in Semiconductor Devices and Circuit Design (19 papers). Yuye Kang collaborates with scholars based in Singapore, United States and China. Yuye Kang's co-authors include Xiao Gong, Kaizhen Han, Zuopu Zhou, Yang Li, Chen Sun, Zijie Zheng, Jiuren Zhou, Leming Jiao, Qiwen Kong and Yue Chen and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Optics Express.

In The Last Decade

Yuye Kang

60 papers receiving 699 citations

Peers

Countries citing papers authored by Yuye Kang

Since Specialization

Citations

This map shows the geographic impact of Yuye Kang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yuye Kang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yuye Kang more than expected).

Fields of papers citing papers by Yuye Kang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yuye Kang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yuye Kang. The network helps show where Yuye Kang may publish in the future.

Co-authorship network of co-authors of Yuye Kang

This figure shows the co-authorship network connecting the top 25 collaborators of Yuye Kang. A scholar is included among the top collaborators of Yuye Kang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yuye Kang. Yuye Kang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Experimental Demonstration and Modeling of BEOL-Compatible IGZO-Based Ferroelectric-Modulated Diodes 2025 ·IEEE Transactions on Electron Devices ·Leming Jiao, Zuopu Zhou, Zijie Zheng, Kaizhen Han, Qiwen Kong, Xiaolin Wang, Haiwen Xu, Jishen Zhang, Chen Sun, Yuye Kang, Gengchiau Liang, Xiao Gong	0
2	Unveiling Ferroelectric HZO Cryogenic Performance (4–300 K): Kinetic Barrier Engineering and Underlying Mechanism 2025 ·IEEE Transactions on Electron Devices ·(unknown), Yang Feng, Zijie Zheng, Chen Sun, Qiwen Kong, Yue Chen, Xiaolin Wang, Yuye Kang, Kaizhen Han, (unknown), Zuopu Zhou, (unknown), Gengchiau Liang, Kai Ni, Jixuan Wu, Jiezhi Chen, Xiao Gong	1
3	Record-High $\mathbf{Pr}\left(2 \mathbf{Pr}>\mathbf{40} \mu \mathbf{C} / \mathbf{cm}^{2}\right)$ in 3 nm (Physical) Ferroelectric HZO Annealed at $\mathbf{450}^{\circ}\mathbf{C}$: High-T (85 °C) Electrical Cycling and Oxygen Vacancy Engineering 2025 ·Yang Feng, Xiaolin Wang, (unknown), Yuye Kang, (unknown), Wei Shi, Zijie Zheng, Leming Jiao, Zuopu Zhou, Chen Sun, Kai Ni, Jixuan Wu, Jiezhi Chen, Xiao Gong	0
4	Uncovering True DIBL in Oxide-Semiconductor FETs: Impact of Negative Bias Stress and its Significance in 2T0C DRAM Retention 2025 ·Yuye Kang, (unknown), (unknown), Zijie Zheng, Qiwen Kong, Gan Liu, Leming Jiao, Zhilun Zhang, Zuopu Zhou, Yue Chen, (unknown), Ying Xu, (unknown), Dong Zhang, (unknown), (unknown)	0
5	BEOL-Compatible ITO FET with Ultra-Short Channel Length of 5 nm 2025 ·(unknown), (unknown), Zhilun Zhang, Zuopu Zhou, Dong Zhang, Chen Sun, (unknown), Zijie Zheng, Wei Shi, Yuye Kang, (unknown), (unknown), (unknown), Xiao Gong	0
6	First Demonstration of BEOL-Compatible Co-Sputter Deposited $\text{Te}_{1-x} \text{Se}_{x}$ p-FETs Enabling 3D Stackable Oxide Semiconductor CFET, DRAM, and First CFET-Structured SRAM 2025 ·Ying Xu, (unknown), Zuopu Zhou, Zijie Zheng, Sheng Luo, Chen Sun, Yuye Kang, Kai Ni, Gengchiau Liang, Xiao Gong	0
7	A Specific Contact Resistivity Extraction Scheme With Strong Variation Immunity Customized for Thin-Film Semiconductors: Bridge Transmission Line Method 2024 ·IEEE Transactions on Electron Devices ·Kaizhen Han, Yuye Kang, Yue Chen, Xiao Gong	1
8	Exploring the Impact of Channel Thickness Scaling on PBTI and Low-Frequency Noise in Ultrathin IGZO Transistors 2024 ·IEEE Transactions on Electron Devices ·(unknown), Qiwen Kong, Xiaolin Wang, (unknown), Zijie Zheng, Chen Sun, (unknown), Yuye Kang, Kaizhen Han, Gengchiau Liang, Xiao Gong	7
9	First Demonstration of BEOL-Compatible 3D Vertical FeNOR 2024 ·(unknown), (unknown), Chen Sun, Zijie Zheng, Yue Chen, Qiwen Kong, (unknown), Yuye Kang, Kaizhen Han, Zuopu Zhou, Gengchiau Liang, Kai Ni, Jixuan Wu, Jiezhi Chen, Xiao Gong	7
10	Top-Gate Indium-Tin-Oxide Power Transistors Featuring High Breakdown Voltage of 156 V 2024 ·IEEE Electron Device Letters ·(unknown), (unknown), Zijie Zheng, Yuye Kang, (unknown), (unknown), Rui Shao, Kaizhen Han, Xiao Gong	4
11	High Performance Indium–Tin–Oxide Schottky Diodes for Terahertz Band Operation 2024 ·Nano Letters ·Kaizhen Han, Yuye Kang, (unknown), (unknown), Chengkuan Wang, Long Liu, Gong Zhang, Yue Chen, Kai Ni, Gengchiau Liang, Xiao Gong	2
12	BEOL-Compatible High-Performance Indium-Tin-Oxide Transistors Enabled by Quantum Confinement-Engineered Properties 2024 ·IEEE Transactions on Electron Devices ·Yuye Kang, Kaizhen Han, (unknown), Yue Chen, Xiao Gong	6
13	Revealing the Impact of Hydrogen (H) on NBTI/PBTI of IGZTO FETs Under DC and AC Stress: Deep Dive into H Dynamics and Advanced Modeling 2024 ·(unknown), Zhilun Zhang, Dieu-Thuong Thi Trinh, Hanjie Li, Qiwen Kong, Chen Sun, Zuopu Zhou, (unknown), Xiaolin Wang, Kaizhen Han, Yuye Kang, Bich-Yen Nguyen, Kai Ni, Gengchiau Liang, Xiao Gong	3
14	Advancing the Understanding of Reliability in BEOL-Compatible Oxide Semiconductor Transistors: The Impact of AC PBTI 2024 ·IEEE Transactions on Electron Devices ·Gan Liu, Qiwen Kong, Zuopu Zhou, Ying Xu, Chen Sun, Kaizhen Han, Yuye Kang, Dong Zhang, Xiaolin Wang, (unknown), Wei Shi, Bich-Yen Nguyen, Kai Ni, Gengchiau Liang, Xiao Gong	1
15	First Demonstration of BEOL-Compatible NV-SRAM Featuring Vertically Stacked ITO FETs and HfO₂-Based Ferroelectric Capacitors for High Density Monolithic 3D Integration 2024 ·Zuopu Zhou, (unknown), Leming Jiao, Kaizhen Han, Yuye Kang, Zijie Zheng, Qiwen Kong, Xiaolin Wang, Bich-Yen Nguyen, Xiao Gong	1
16	Fluorine Plasma Treatment-Enabled ITO Transistors: Excellent Reliability and Comprehensive Understanding of Temperature Dependence from 77 $\mathbf{K}$ to 375 $\mathbf{K}$ 2024 ·(unknown), Gan Liu, Wei Shi, Yuye Kang, Qiwen Kong, Yuxuan Wang, Rui Shao, Bich-Yen Nguyen, Gengchiau Liang, Kaizhen Han, (unknown)	2
17	Optical Gain Spectrum and Confinement Factor of a Monolayer Semiconductor in an Ultrahigh-Quality Cavity 2023 ·Nano Letters ·Tianhua Ren, Junyong Wang, Kaizhen Han, Yuye Kang, Annie Kumar, Gong Zhang, Zhe Wang, Rupert F. Oulton, Goki Eda, Xiao Gong	1
18	Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High C_HCS/C_LCS, Fast Speed, and Long Retention 2022 ·2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ·Zuopu Zhou, Leming Jiao, Jiuren Zhou, Zijie Zheng, Yue Chen, Kaizhen Han, Yuye Kang, Xiao Gong	32
19	ITO Schottky Diode wth Record f_T Beyond 400 GHz: Exploring Thickness Depdendant Film Property and Novel Heterogeneous Design 2022 ·2022 International Electron Devices Meeting (IEDM) ·Kaizhen Han, Chengkuan Wang, Yuye Kang, Long Liu, Gong Zhang, Yue Chen, Xiao Gong	4
20	Ge_0.95Sn_0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width 2021 ·Nano Letters ·Yuye Kang, Shengqiang Xu, Kaizhen Han, (unknown), Zhigang Song, Sheng Luo, Annie Kumar, Chengkuan Wang, W. J. Fan, Gengchiau Liang, Xiao Gong	28

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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