Haoyan Liu

593 total citations
48 papers, 390 citations indexed

About

Haoyan Liu is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Artificial Intelligence. According to data from OpenAlex, Haoyan Liu has authored 48 papers receiving a total of 390 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 15 papers in Biomedical Engineering and 9 papers in Artificial Intelligence. Recurrent topics in Haoyan Liu's work include Semiconductor materials and devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Nanowire Synthesis and Applications (8 papers). Haoyan Liu is often cited by papers focused on Semiconductor materials and devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Nanowire Synthesis and Applications (8 papers). Haoyan Liu collaborates with scholars based in China, United States and Switzerland. Haoyan Liu's co-authors include H. Alan Mantooth, Alexander Nelson, Tengjiao Wang, Yongliang Li, Kun Wang, Junjie Wang, Wei Huang, Peng Li, Keith Bailey and Magda El‐Shenawee and has published in prestigious journals such as Advanced Materials, ACS Applied Materials & Interfaces and IEEE Transactions on Electron Devices.

In The Last Decade

Haoyan Liu

43 papers receiving 375 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Haoyan Liu China 11 214 118 53 49 42 48 390
Sang‐Hui Park South Korea 15 285 1.3× 305 2.6× 31 0.6× 36 0.7× 143 3.4× 47 685
Haowen Wang China 12 334 1.6× 51 0.4× 35 0.7× 26 0.5× 44 1.0× 31 447
Xiaobo Wu China 13 519 2.4× 226 1.9× 77 1.5× 109 2.2× 51 1.2× 139 656
Devansh R. Agrawal United States 8 126 0.6× 124 1.1× 85 1.6× 23 0.5× 12 0.3× 15 333
Jiawei Yang China 12 392 1.8× 94 0.8× 73 1.4× 51 1.0× 52 1.2× 40 483
Xiangyu Li China 14 186 0.9× 92 0.8× 23 0.4× 12 0.2× 79 1.9× 43 551
Mohammad Alhawari United Arab Emirates 14 477 2.2× 244 2.1× 18 0.3× 43 0.9× 65 1.5× 53 658
A. B. M. Harun-ur Rashid Bangladesh 12 362 1.7× 37 0.3× 26 0.5× 39 0.8× 14 0.3× 61 434
Xiaoyan Shen China 10 127 0.6× 85 0.7× 6 0.1× 13 0.3× 57 1.4× 53 321
John Naber United States 11 313 1.5× 365 3.1× 21 0.4× 39 0.8× 22 0.5× 57 624

Countries citing papers authored by Haoyan Liu

Since Specialization
Citations

This map shows the geographic impact of Haoyan Liu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Haoyan Liu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Haoyan Liu more than expected).

Fields of papers citing papers by Haoyan Liu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Haoyan Liu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Haoyan Liu. The network helps show where Haoyan Liu may publish in the future.

Co-authorship network of co-authors of Haoyan Liu

This figure shows the co-authorship network connecting the top 25 collaborators of Haoyan Liu. A scholar is included among the top collaborators of Haoyan Liu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Haoyan Liu. Haoyan Liu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Peng, Fangyu, et al.. (2025). Scaled non-passive environmental interaction force tracking for telerobotic manufacturing system with variable time delay. Science China Technological Sciences. 68(3). 1 indexed citations
2.
Luo, Huaizhi, Haoyan Liu, Pengfei Yang, et al.. (2025). Reduction of Ge MOS interface defects via Al2O3 or trimethylaluminum pre-doping combined with post-oxidation. Materials Science in Semiconductor Processing. 197. 109692–109692.
3.
Peng, Fangyu, et al.. (2025). Adaptive safety-critical control using a variable task energy tank for collaborative robot tasks under dynamic environments. Robotics and Computer-Integrated Manufacturing. 94. 102964–102964. 2 indexed citations
4.
5.
Zhao, Fei, et al.. (2024). Co-Integration of Si-Channel nMOS and SiGe-Channel pMOS GAA Transistors Using the Novel Dual-Channel Selective Release Scheme. IEEE Transactions on Electron Devices. 72(2). 572–576. 3 indexed citations
6.
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8.
Liu, Haoyan, Yongliang Li, Chun Li, et al.. (2022). A stacked high-Ge-concentration SiGe/Ge multilayer on a novel Ge + SiGe SRB structure for the gate-all-around MOSFETS. Journal of Materials Science Materials in Electronics. 33(29). 22926–22931.
9.
Li, Yongliang, Fei Zhao, Haoyan Liu, et al.. (2022). 4-Levels Vertically Stacked SiGe Channel Nanowires Gate-All-Around Transistor with Novel Channel Releasing and Source and Drain Silicide Process. Nanomaterials. 12(5). 889–889. 13 indexed citations
10.
Li, Yongliang, Fei Zhao, Haoyan Liu, et al.. (2021). Novel Si/SiGe fin on insulator fabrication on bulk-Si substrate. Materials Research Express. 8(7). 75902–75902. 1 indexed citations
11.
Li, Yan, et al.. (2021). Fabrication of High-Mobility Si 0.7 Ge 0.3 Channel FinFET for Optimization of Device Electrical Performance. ECS Journal of Solid State Science and Technology. 10(7). 75001–75001. 3 indexed citations
12.
Li, Yongliang, Fei Zhao, Haoyan Liu, et al.. (2021). Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics. Nanomaterials. 11(7). 1689–1689. 17 indexed citations
13.
Li, Yongliang, et al.. (2021). Si0.5Ge0.5 channel introduction technique for the preparation of high mobility FinFET device. Materials Science in Semiconductor Processing. 139. 106373–106373. 3 indexed citations
14.
Li, Yongliang, et al.. (2021). Integration of Si 0.7 Ge 0.3 fin onto a bulk-Si substrate and its P-type FinFET device fabrication. Semiconductor Science and Technology. 36(12). 125001–125001. 3 indexed citations
15.
Liu, Haoyan, Yongliang Li, Guilei Wang, et al.. (2020). Fabrication and selective wet etching of Si0.2Ge0.8/Ge multilayer for Si0.2Ge0.8 channel gate-all-around MOSFETs. Materials Science in Semiconductor Processing. 121. 105397–105397. 7 indexed citations
16.
Li, Yongliang, Haoyan Liu, Qingzhu Zhang, et al.. (2020). Selective wet etching in fabricating SiGe nanowires with TMAH solution for gate-all-around MOSFETs. Journal of Materials Science Materials in Electronics. 31(24). 22478–22486. 8 indexed citations
17.
Li, Yongliang, Guilei Wang, Haoyan Liu, et al.. (2020). Investigation on thermal stability of Si 0.7 Ge 0.3 /Si stacked multilayer for gate-all-around MOSFETS. Semiconductor Science and Technology. 35(11). 115008–115008. 8 indexed citations
18.
Li, Yongliang, Junjie Li, Guilei Wang, et al.. (2020). Fabrication technique of the Si 0.5 Ge 0.5 Fin for the high mobility channel FinFET device. Semiconductor Science and Technology. 35(4). 45015–45015. 9 indexed citations
19.
Li, Yongliang, Haoyan Liu, Guilei Wang, et al.. (2019). Investigation on the formation technique of SiGe Fin for the high mobility channel FinFET device. Journal of Materials Science Materials in Electronics. 31(8). 5854–5860. 1 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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2026