Qiangxiang Peng

782 total citations
39 papers, 600 citations indexed

About

Qiangxiang Peng is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Qiangxiang Peng has authored 39 papers receiving a total of 600 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 26 papers in Materials Chemistry and 9 papers in Biomedical Engineering. Recurrent topics in Qiangxiang Peng's work include Ferroelectric and Negative Capacitance Devices (21 papers), Ferroelectric and Piezoelectric Materials (17 papers) and Semiconductor materials and devices (14 papers). Qiangxiang Peng is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (21 papers), Ferroelectric and Piezoelectric Materials (17 papers) and Semiconductor materials and devices (14 papers). Qiangxiang Peng collaborates with scholars based in China, United States and Taiwan. Qiangxiang Peng's co-authors include Yichun Zhou, Min Liao, Shuaizhi Zheng, Binjian Zeng, Jiajia Liao, Wenwu Xiao, Heng Liu, Xiangyu Sun, Qiong Yang and Wenbo Luo and has published in prestigious journals such as Advanced Materials, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Qiangxiang Peng

36 papers receiving 586 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Qiangxiang Peng China 14 501 391 114 36 32 39 600
Mengchuan Tian China 10 424 0.8× 306 0.8× 139 1.2× 39 1.1× 56 1.8× 13 534
Shihab Bin Hafiz United States 9 267 0.5× 289 0.7× 82 0.7× 39 1.1× 52 1.6× 16 365
Cynthia A. Colinge United States 4 595 1.2× 290 0.7× 225 2.0× 34 0.9× 88 2.8× 5 762
Chin‐Sheng Pang United States 12 327 0.7× 314 0.8× 92 0.8× 27 0.8× 33 1.0× 21 457
Alvin Tang United States 8 238 0.5× 319 0.8× 91 0.8× 18 0.5× 31 1.0× 9 407
Pyungho Choi South Korea 10 292 0.6× 203 0.5× 44 0.4× 36 1.0× 47 1.5× 43 380
Zhenliang Hu China 14 340 0.7× 541 1.4× 96 0.8× 60 1.7× 50 1.6× 39 668
Wanling Deng China 13 459 0.9× 97 0.2× 91 0.8× 31 0.9× 32 1.0× 79 545
Sunwoo Heo South Korea 8 245 0.5× 220 0.6× 103 0.9× 39 1.1× 42 1.3× 18 367
Czang-Ho Lee Canada 14 557 1.1× 352 0.9× 178 1.6× 22 0.6× 21 0.7× 48 603

Countries citing papers authored by Qiangxiang Peng

Since Specialization
Citations

This map shows the geographic impact of Qiangxiang Peng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Qiangxiang Peng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Qiangxiang Peng more than expected).

Fields of papers citing papers by Qiangxiang Peng

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Qiangxiang Peng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Qiangxiang Peng. The network helps show where Qiangxiang Peng may publish in the future.

Co-authorship network of co-authors of Qiangxiang Peng

This figure shows the co-authorship network connecting the top 25 collaborators of Qiangxiang Peng. A scholar is included among the top collaborators of Qiangxiang Peng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Qiangxiang Peng. Qiangxiang Peng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Liu, Jun‐Ming, Binjian Zeng, Zhibin Yang, et al.. (2025). Ultra-low-voltage operation, large ferroelectric polarization, fast switching speed, and high endurance of 450 °C processed HZO thin films by starting-layer engineering. Journal of Material Science and Technology. 241. 311–319.
2.
He, Qisheng, et al.. (2024). The contradiction between thermodynamic and kinetic effects of stress-modulated antiferroelectricity in ZrO 2 thin films. Materials Horizons. 11(22). 5684–5691. 1 indexed citations
3.
4.
Yin, Lihua, Ruiping Liu, Qinghua Zhang, et al.. (2024). Multiple Polarization States in Hf1−xZrxO2 Thin Films by Ferroelectric and Antiferroelectric Coupling. Advanced Materials. 37(6). e2411463–e2411463. 5 indexed citations
5.
Li, Xinyu, et al.. (2024). Improved ferroelectricity and endurance in Ca doped Hf0.5Zr0.5O2 films. Ceramics International. 50(23). 49577–49586. 1 indexed citations
6.
Zeng, Binjian, Zhibin Yang, Qiangxiang Peng, et al.. (2023). Improved ferroelectric properties of CMOS back-end-of-line compatible Hf0.5Zr0.5O2 thin films by introducing dielectric layers. Journal of Materiomics. 10(2). 277–284. 11 indexed citations
7.
Li, Huashan, Binjian Zeng, Shuaizhi Zheng, et al.. (2023). Effects of thickness scaling on the dielectric properties of Hf0.5Zr0.5O2 ferroelectric thin films. Journal of Materials Science Materials in Electronics. 34(13). 4 indexed citations
8.
Zheng, Shuaizhi, Binjian Zeng, Changyuan Yu, et al.. (2023). Highly Enhanced Polarization Switching Speed in HfO2‐based Ferroelectric Thin Films via a Composition Gradient Strategy. Advanced Functional Materials. 33(31). 21 indexed citations
9.
Liu, Lei, et al.. (2022). Robust ferroelectricity enhancement of PZT thin films by a homogeneous seed layer. Journal of Materials Science. 57(41). 19371–19380. 1 indexed citations
10.
Zeng, Binjian, Shuaizhi Zheng, Qiangxiang Peng, et al.. (2021). Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors. Journal of Materiomics. 8(3). 685–692. 9 indexed citations
11.
Xiao, Wenwu, Yue Peng, Binjian Zeng, et al.. (2021). Hf0.5Zr0.5O₂-Based Ferroelectric Field-Effect Transistors With HfO₂ Seed Layers for Radiation-Hard Nonvolatile Memory Applications. IEEE Transactions on Electron Devices. 68(9). 4368–4372. 26 indexed citations
12.
Liu, Wenyan, Jiajia Liao, Jie Jiang, et al.. (2020). Highly stable performance of flexible Hf0.6Zr0.4O2 ferroelectric thin films under multi-service conditions. Journal of Materials Chemistry C. 8(11). 3878–3886. 40 indexed citations
13.
Zheng, Shuaizhi, Zidong Zhao, Binjian Zeng, et al.. (2020). Improvement of remanent polarization of CeO2–HfO2 solid solution thin films on Si substrates by chemical solution deposition. Applied Physics Letters. 117(21). 28 indexed citations
14.
Sun, Qi, Jiajia Liao, Qiangxiang Peng, et al.. (2019). Total ionizing dose effects of 60Co γ-rays radiation on HfxZr1−xO2 ferroelectric thin film capacitors. Journal of Materials Science Materials in Electronics. 31(3). 2049–2056. 11 indexed citations
15.
Zeng, Binjian, Wenwu Xiao, Jiajia Liao, et al.. (2018). Compatibility of HfN Metal Gate Electrodes With Hf0.5Zr0.5O2 Ferroelectric Thin Films for Ferroelectric Field-Effect Transistors. IEEE Electron Device Letters. 39(10). 1508–1511. 57 indexed citations
16.
Peng, Qiangxiang, et al.. (2014). The fabrication and pyroelectric properties of single crystalline PZT nanorod synthesized by hydrothermal reaction. Journal of Materials Science Materials in Electronics. 25(4). 1627–1632. 9 indexed citations
17.
Peng, Qiangxiang, Chuangui Wu, Wenbo Luo, et al.. (2013). The improvement of pyroelectric properties of PZT thick films on Si substrate by TiO barrier layer. Infrared Physics & Technology. 58. 51–55. 8 indexed citations
18.
Peng, Qiangxiang, et al.. (2013). A new method of depositing high figure-of-merit porous PZT pyroelectric thick film using [001]-oriented PZT nanorod by electrophoresis deposition. Journal of Materials Science Materials in Electronics. 25(1). 297–302. 3 indexed citations
19.
Sun, Xiangyu, Jin Meng, Wenbo Luo, et al.. (2013). Fast and wide-band response infrared detector using porous PZT pyroelectric thick film. Infrared Physics & Technology. 63. 69–73. 12 indexed citations
20.
Rheenen, Arthur D. van, et al.. (1989). Noise and lifetime measurements in Si p+-i-n power diodes. Solid-State Electronics. 32(5). 345–348. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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