Chengru Gu

628 total citations
24 papers, 446 citations indexed

About

Chengru Gu is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, Chengru Gu has authored 24 papers receiving a total of 446 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 11 papers in Materials Chemistry and 4 papers in Condensed Matter Physics. Recurrent topics in Chengru Gu's work include Semiconductor materials and devices (13 papers), Thin-Film Transistor Technologies (12 papers) and Ferroelectric and Negative Capacitance Devices (6 papers). Chengru Gu is often cited by papers focused on Semiconductor materials and devices (13 papers), Thin-Film Transistor Technologies (12 papers) and Ferroelectric and Negative Capacitance Devices (6 papers). Chengru Gu collaborates with scholars based in China, Singapore and Germany. Chengru Gu's co-authors include Yanqing Wu, Qianlan Hu, Xuefei Li, Jiyang Kang, Xiong Xiong, Tingting Gao, Ru Huang, Shengman Li, Mengfei Wang and Qijun Li and has published in prestigious journals such as Advanced Materials, Applied Physics Letters and Advanced Functional Materials.

In The Last Decade

Chengru Gu

22 papers receiving 444 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Chengru Gu China 14 381 203 65 37 35 24 446
Xing Lan United States 11 321 0.8× 111 0.5× 72 1.1× 29 0.8× 26 0.7× 24 389
Daewoong Kwon South Korea 14 499 1.3× 188 0.9× 35 0.5× 16 0.4× 16 0.5× 34 526
Mao‐Chou Tai Taiwan 10 323 0.8× 147 0.7× 68 1.0× 22 0.6× 50 1.4× 46 353
Chun‐Yen Chang Taiwan 13 466 1.2× 202 1.0× 72 1.1× 23 0.6× 57 1.6× 63 515
Yi‐Feng Zhao China 12 219 0.6× 317 1.6× 54 0.8× 41 1.1× 33 0.9× 30 419
Jiahao Yin China 13 333 0.9× 107 0.5× 33 0.5× 31 0.8× 35 1.0× 48 390
Kathryn M. Neilson United States 9 346 0.9× 272 1.3× 59 0.9× 17 0.5× 50 1.4× 19 446
Sungju Choi South Korea 15 551 1.4× 290 1.4× 84 1.3× 9 0.2× 79 2.3× 45 609
Yuye Kang Singapore 16 657 1.7× 216 1.1× 105 1.6× 13 0.4× 16 0.5× 68 706

Countries citing papers authored by Chengru Gu

Since Specialization
Citations

This map shows the geographic impact of Chengru Gu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chengru Gu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chengru Gu more than expected).

Fields of papers citing papers by Chengru Gu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chengru Gu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chengru Gu. The network helps show where Chengru Gu may publish in the future.

Co-authorship network of co-authors of Chengru Gu

This figure shows the co-authorship network connecting the top 25 collaborators of Chengru Gu. A scholar is included among the top collaborators of Chengru Gu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Chengru Gu. Chengru Gu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hu, Qianlan, et al.. (2025). Amorphous indium tin oxide transistors for power amplification above 10 GHz. Nature Electronics. 8(9). 803–809.
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Gu, Chengru, Qianlan Hu, Honggang Liu, et al.. (2023). High-Performance Short-Channel Top-Gate Indium-Tin-Oxide Transistors by Optimized Gate Dielectric. IEEE Electron Device Letters. 44(5). 837–840. 13 indexed citations
5.
Zeng, Min, Qianlan Hu, Qijun Li, et al.. (2023). First Demonstration of Annealing-Free Top Gate La:HZO-IGZO FeFET with Record Memory Window and Endurance. 1–4. 12 indexed citations
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Hu, Qianlan, Chengru Gu, Shiyuan Liu, et al.. (2023). True Nonvolatile High‐Speed DRAM Cells Using Tailored Ultrathin IGZO. Advanced Materials. 35(20). e2210554–e2210554. 37 indexed citations
8.
Hu, Qianlan, Chengru Gu, Qijun Li, et al.. (2022). Capacitorless DRAM Cells Based on High-Performance Indium-Tin-Oxide Transistors With Record Data Retention and Reduced Write Latency. IEEE Electron Device Letters. 44(1). 60–63. 34 indexed citations
9.
Gu, Chengru, et al.. (2022). BEOL-Compatible High-Performance a-IGZO Transistors with Record high Ids,max = 1207 μA/μm and on-off ratio exceeding 1011 at Vds = 1V. 2022 International Electron Devices Meeting (IEDM). 2.7.1–2.7.4. 14 indexed citations
10.
Hu, Qianlan, Qijun Li, Chengru Gu, et al.. (2022). Optimized IGZO FETs for Capacitorless DRAM with Retention of 10 ks at RT and 7 ks at 85 °C at Zero Vhold with Sub-10 ns Speed and 3-bit Operation. 2022 International Electron Devices Meeting (IEDM). 26.6.1–26.6.4. 20 indexed citations
11.
Hu, Qianlan, et al.. (2022). High-stability flexible radio frequency transistor and mixer based on ultrathin indium tin oxide channel. Applied Physics Letters. 121(24). 5 indexed citations
12.
Hu, Qianlan, et al.. (2022). Ultrashort 15-nm flexible radio frequency ITO transistors enduring mechanical and temperature stress. Science Advances. 8(51). eade4075–eade4075. 16 indexed citations
13.
Li, Xuefei, et al.. (2022). Van der Waals Epitaxial Trilayer MoS2 Crystals for High‐Speed Electronics. Advanced Functional Materials. 32(46). 14 indexed citations
14.
Wang, Xin, et al.. (2021). High-performance n-type transistors based on CVD-grown large-domain trilayer WSe2. APL Materials. 9(7). 9 indexed citations
15.
Wang, Mengfei, et al.. (2021). Performance Optimization of Atomic Layer Deposited ZnO Thin-Film Transistors by Vacuum Annealing. IEEE Electron Device Letters. 42(5). 716–719. 21 indexed citations
16.
Tian, Mengchuan, Qianlan Hu, Chengru Gu, et al.. (2020). Tunable 1/f Noise in CVD Bernal-Stacked Bilayer Graphene Transistors. ACS Applied Materials & Interfaces. 12(15). 17686–17690. 5 indexed citations
17.
Xiong, Xiong, Jiyang Kang, Qianlan Hu, et al.. (2020). Reconfigurable Logic‐in‐Memory and Multilingual Artificial Synapses Based on 2D Heterostructures. Advanced Functional Materials. 30(11). 129 indexed citations
18.
Li, Shengman, Mengchuan Tian, Chengru Gu, et al.. (2019). BEOL Compatible 15-nm Channel Length Ultrathin Indium-Tin-Oxide Transistors with Ion = 970 μA/μm and On/off Ratio Near 1011 at Vds = 0.5 V. 3.5.1–3.5.4. 13 indexed citations
19.
Hu, Qianlan, Ben Yu-Kuang Hu, Chengru Gu, et al.. (2019). Improved Current Collapse in Recessed AlGaN/GaN MOS-HEMTs by Interface and Structure Engineering. IEEE Transactions on Electron Devices. 66(11). 4591–4596. 25 indexed citations
20.
Wang, Mengfei, Xuefei Li, Xiong Xiong, et al.. (2019). High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition. IEEE Electron Device Letters. 40(3). 419–422. 30 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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