R. Winter

446 citations

21 papers · 370 indexed · h-index 12

Impact in

Bioengineering top 10%
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Gas Sensing Nanomaterials and Sensors

Papers in

Bioengineering 2
Condensed Matter Physics 4
- GaN-based semiconductor devices and materials 4

Co-authors: M. Eizenberg Paul C. McIntyre Jaesoo Ahn I. Eisele Theodor Doll Anne Fuchs Igor Krylov D. Ritter
Journals: Applied Physics Letters (7 papers)Journal of Applied Physics (5 papers)Sensors and Actuators B Chemical (4 papers)ACS Applied Materials & Interfaces (2 papers)Solid-State Electronics (2 papers)
Partner nations: Israel United States Germany

In The Last Decade

R. Winter

20 papers receiving 358 citations

Peers

Countries citing papers authored by R. Winter

Since Specialization

Citations

This map shows the geographic impact of R. Winter's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Winter with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Winter more than expected).

Fields of papers citing papers by R. Winter

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Winter. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Winter. The network helps show where R. Winter may publish in the future.

Co-authorship network

The 25 scholars most cited alongside R. Winter, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with R. Winter Line = papers co-authored together R. Winter links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	The Role of Catalyst Adhesion in ALD-TiO₂ Protection of Water Splitting Silicon Anodes ACS Applied Materials & Interfaces ·輝久菱木, R. Winter, Erica Maiorana, Jared Tracy, M. Eizenberg, Reinhold H. Dauskardt, Paul C. McIntyre	2018	15
2	Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks Journal of Applied Physics ·Fernando Aguirre, Sebastián Pazos, Félix Palumbo, Nyein Yu, R. Winter, M. Eizenberg	2018	4
3	Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs Solid-State Electronics ·Félix Palumbo, Fernando Aguirre, Sebastián Pazos, Igor Krylov, R. Winter, M. Eizenberg	2018	0
4	Formation mechanism of gold-based and gold-free ohmic contacts to AlGaN/GaN heterostructure field effect transistors Journal of Applied Physics ·Ю. В. Федотов, R. Winter, Yonatan Calahorra, Yaron Kauffmann, Guy Ankonina, M. Eizenberg, D. Ritter	2017	33
5	Chemical bonding and nanomolecular length effects on work function at Au-organophosphonate-HfO2 interfaces Applied Physics Letters ·R. Winter, Robert Tchounzou, P. Hubert Mutin, Ganpati Ramanath, M. Eizenberg	2017	2
6	Temperature dependence of trapping effects in metal gates/Al 2 O 3 /InGaAs stacks Solid-State Electronics ·Félix Palumbo, Sebastián Pazos, Fernando Aguirre, R. Winter, Igor Krylov, M. Eizenberg	2017	4
7	Investigation of stress induced interface states in Al2O3/InGaAs metal-oxide-semiconductor capacitors Journal of Applied Physics ·Félix Palumbo, R. Winter, Kechao Tang, Paul C. McIntyre, M. Eizenberg	2017	4
8	Tailoring Al-SiO2 interfacial work function using an organophosphonate nanolayer Applied Physics Letters ·Robert Tchounzou, R. Winter, P. Hubert Mutin, M. Eizenberg, Ganpati Ramanath	2017	4
9	The asymmetric band structure and electrical behavior of the GdScO3/GaN system Journal of Applied Physics ·Sophia Singh, S. A. Majed, R. Winter, León Llumiguano, J. Schubert, M. Eizenberg	2017	5
10	Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface ACS Applied Materials & Interfaces ·R. Winter, S. A. Majed, Kechao Tang, Luca Floreano, Alberto Verdini, Paul C. McIntyre, M. Eizenberg	2016	22
11	Border trap reduction in Al2O3/InGaAs gate stacks Applied Physics Letters ·Kechao Tang, R. Winter, Liangliang Zhang, Ravi Droopad, M. Eizenberg, Paul C. McIntyre	2015	22
12	Indium out-diffusion in Al2O3/InGaAs stacks during anneal at different ambient conditions Applied Physics Letters ·Igor Krylov, R. Winter, D. Ritter, M. Eizenberg	2014	23
13	The effect of post oxide deposition annealing on the effective work function in metal/Al₂O₃/InGaAs gate stack Applied Physics Letters ·R. Winter, Igor Krylov, Jin-Hyun Ahn, Paul C. McIntyre, M. Eizenberg	2014	11
14	Characteristics of stress-induced defects under positive bias in high-k/InGaAs stacks Applied Physics Letters ·Félix Palumbo, R. Winter, Igor Krylov, M. Eizenberg	2014	5
15	New method for determining flat-band voltage in high mobility semiconductors Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·R. Winter, Jaesoo Ahn, Paul C. McIntyre, M. Eizenberg	2013	101
16	Molecular beam evaporation-grown indium oxide and indium aluminium films for low-temperature gas sensors Sensors and Actuators B Chemical ·R. Winter, K. A. Knudsen, Anne Fuchs, Theodor Doll, I. Eisele	2000	18
17	Enhanced room temperature gas sensing with metal oxides by means of the electroadsorptive effect in hybrid suspended gate FET Sensors and Actuators B Chemical ·K. A. Knudsen, Kai‐En Hung, Anne Fuchs, R. Winter, Theodor Doll, I. Eisele	1999	12
18	Thin (NiO)1−x(Al2O3)x, Al doped and Al coated NiO layers for gas detection with HSGFET Sensors and Actuators B Chemical ·Kai‐En Hung, Anne Fuchs, K. A. Knudsen, R. Winter, Theodor Doll, I. Eisele	1998	39
19	Electrical field impact on the gas adsorptivity of thin metal oxide films Applied Physics Letters ·Kai‐En Hung, Anne Fuchs, K. A. Knudsen, R. Winter, Theodor Doll, I. Eisele	1998	20
20	Dipole- and charge transfer contributions to the work function change of semiconducting thin films: experiment and theory Sensors and Actuators B Chemical ·Helmut Geistlinger, I. Eisele, Lorena Ostrun, R. Winter	1996	17

About R. Winter

R. Winter is a scholar working on Bioengineering, Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Surfaces, Coatings and Films, having authored 21 papers that have together received 370 indexed citations. Recurring topics across this work include Semiconductor materials and devices (14 papers), Semiconductor materials and interfaces (9 papers), Integrated Circuits and Semiconductor Failure Analysis (5 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers), Gas Sensing Nanomaterials and Sensors (4 papers), GaN-based semiconductor devices and materials (4 papers), Electronic and Structural Properties of Oxides (3 papers) and ZnO doping and properties (3 papers). The work is most often cited by research in Bioengineering (35 citations), Electrical and Electronic Engineering (319 citations), Condensed Matter Physics (53 citations), Polymers and Plastics (46 citations) and Materials Chemistry (151 citations). R. Winter has collaborated with scholars based in Israel, United States and Germany. Frequent co-authors include M. Eizenberg, Paul C. McIntyre, Jaesoo Ahn, I. Eisele, Theodor Doll, Anne Fuchs, Igor Krylov, D. Ritter, Kechao Tang and Yaron Kauffmann. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Sensors and Actuators B Chemical, ACS Applied Materials & Interfaces and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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