M. Eizenberg

5.4k total citations · 1 hit paper
250 papers, 4.4k citations indexed

About

M. Eizenberg is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, M. Eizenberg has authored 250 papers receiving a total of 4.4k indexed citations (citations by other indexed papers that have themselves been cited), including 207 papers in Electrical and Electronic Engineering, 128 papers in Atomic and Molecular Physics, and Optics and 61 papers in Materials Chemistry. Recurrent topics in M. Eizenberg's work include Semiconductor materials and devices (162 papers), Semiconductor materials and interfaces (114 papers) and Copper Interconnects and Reliability (49 papers). M. Eizenberg is often cited by papers focused on Semiconductor materials and devices (162 papers), Semiconductor materials and interfaces (114 papers) and Copper Interconnects and Reliability (49 papers). M. Eizenberg collaborates with scholars based in Israel, United States and Germany. M. Eizenberg's co-authors include J. M. Blakely, Igor Krylov, D. Ritter, Yosi Shacham‐Diamand, K. N. Tu, A. Lahav, A. Kohn, Félix Palumbo, R. Winter and Y. Komem and has published in prestigious journals such as Nature, The Journal of Chemical Physics and Applied Physics Letters.

In The Last Decade

M. Eizenberg

244 papers receiving 4.2k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Carbon monolayer phase condensation on Ni(111)

1979 383 citations M. Eizenberg et al. profile →

Peers

Countries citing papers authored by M. Eizenberg

Since Specialization

Citations

This map shows the geographic impact of M. Eizenberg's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Eizenberg with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Eizenberg more than expected).

Fields of papers citing papers by M. Eizenberg

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Eizenberg. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Eizenberg. The network helps show where M. Eizenberg may publish in the future.

Co-authorship network of co-authors of M. Eizenberg

This figure shows the co-authorship network connecting the top 25 collaborators of M. Eizenberg. A scholar is included among the top collaborators of M. Eizenberg based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Eizenberg. M. Eizenberg is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	P‐30: Effect of High‐k Oxide Materials on Amorphous Indium Gallium Zinc Oxide (α‐IGZO) Channel in Top Gate Field Effect Transistors 2024 ·SID Symposium Digest of Technical Papers ·(unknown), (unknown), (unknown), M. Eizenberg, Ioannis Kymissis	1
2	Impact of chemical bonding difference of ALD Mo on SiO2 and Al2O3 on the effective work function of the two gate stacks 2021 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·(unknown), (unknown), (unknown), Yaron Kauffmann, (unknown), M. Eizenberg	7
3	Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect 2020 ·Journal of Applied Physics ·Igor Krylov, (unknown), Xianbin Xu, (unknown), Eilam Yalon, D. Ritter, M. Eizenberg	6
4	Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition 2020 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Igor Krylov, Yuanshen Qi, (unknown), (unknown), M. Eizenberg, Eilam Yalon	13
5	Zero temperature coefficient of resistance in back-end-of-the-line compatible titanium aluminum nitride films by atomic layer deposition 2020 ·Applied Physics Letters ·Igor Krylov, Yuanshen Qi, (unknown), (unknown), M. Eizenberg, Eilam Yalon	7
6	Impact of bilayered oxide stacks on the breakdown transients of metal–oxide–semiconductor devices: An experimental study 2020 ·Journal of Applied Physics ·Sebastián Pazos, (unknown), Fernando Aguirre, Igor Krylov, M. Eizenberg, Félix Palumbo	9
7	The Role of Catalyst Adhesion in ALD-TiO₂ Protection of Water Splitting Silicon Anodes 2018 ·ACS Applied Materials & Interfaces ·(unknown), R. Winter, (unknown), Jared Tracy, M. Eizenberg, Reinhold H. Dauskardt, Paul C. McIntyre	15
8	Formation mechanism of gold-based and gold-free ohmic contacts to AlGaN/GaN heterostructure field effect transistors 2017 ·Journal of Applied Physics ·(unknown), R. Winter, Yonatan Calahorra, Yaron Kauffmann, Guy Ankonina, M. Eizenberg, D. Ritter	33
9	Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks 2015 ·Microelectronics Reliability ·Félix Palumbo, S. Lombardo, M. Eizenberg	4
10	Indium out-diffusion in Al2O3/InGaAs stacks during anneal at different ambient conditions 2014 ·Applied Physics Letters ·Igor Krylov, R. Winter, D. Ritter, M. Eizenberg	23
11	Fermi level tuning using the Hf-Ni alloy system as a gate electrode in metal-oxide-semiconductor devices 2012 ·Journal of Applied Physics ·(unknown), (unknown), (unknown), Lior Kornblum, Yaron Kauffmann, Yaron Amouyal, M. Eizenberg	11
12	Annealing-induced interfacial toughening using a molecular nanolayer 2007 ·Nature ·D. D. Gandhi, Michael Lane, Yu Zhou, Amit Pratap Singh, Saroj K. Nayak, Ulrike Tisch, M. Eizenberg, Ganapathiraman Ramanath	118
13	Copper diffusion and mechanical toughness at Cu-silica interfaces glued with polyelectrolyte nanolayers 2007 ·Journal of Applied Physics ·D. D. Gandhi, Amit Pratap Singh, Michael Lane, M. Eizenberg, Ganpati Ramanath	10
14	Nucleation and growth of CVD Al on different types of TiN 1998 ·Thin Solid Films ·(unknown), (unknown), Wayne D. Kaplan, M. Eizenberg, (unknown), (unknown), (unknown), (unknown), Karl A. Littau, Steve Zhou, (unknown)	19
15	Interaction between Ni90Ti10 alloy thin film and Si single crystal 1996 ·Journal of Applied Physics ·Michael Levit, I. Grimberg, B. Z. Weiss, M. Eizenberg	1
16	Low-dose implantation of Sb in Si1−xGex epitaxial layers: Correlation between electrical properties and radiation damage 1994 ·Journal of Applied Physics ·Z. Atzmon, M. Eizenberg, Yosi Shacham‐Diamand, J. W. Mayer, F. Schäffler	14
17	Formation of compositionally uniform tungsten silicide films using dichlorosilane in a single-wafer reactor 1993 ·Applied Physics Letters ·(unknown), M. Eizenberg, (unknown), A. K. Sinha, T. R. Gow	4
18	Electrical properties of Sb implanted Si1−xGex alloy layers 1992 ·Applied Physics Letters ·Z. Atzmon, M. Eizenberg, Yosi Shacham‐Diamand, J. W. Mayer, F. Schäffler	7
19	Space-charge-limited current measurements in semi-insulating GaAs 1991 ·Journal of Applied Physics ·M. Eizenberg, H.J. Hovel	16
20	Electron beam evaporation of oriented Nb films onto GaAs crystals in ultrahigh vacuum 1986 ·Applied Physics Letters ·M. Eizenberg, D. A. Smith, M. Heiblum, Armin Segmüller	12

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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