Eszter Piros

506 total citations
25 papers, 368 citations indexed

About

Eszter Piros is a scholar working on Electrical and Electronic Engineering, Cellular and Molecular Neuroscience and Polymers and Plastics. According to data from OpenAlex, Eszter Piros has authored 25 papers receiving a total of 368 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 6 papers in Cellular and Molecular Neuroscience and 3 papers in Polymers and Plastics. Recurrent topics in Eszter Piros's work include Advanced Memory and Neural Computing (23 papers), Ferroelectric and Negative Capacitance Devices (17 papers) and Semiconductor materials and devices (13 papers). Eszter Piros is often cited by papers focused on Advanced Memory and Neural Computing (23 papers), Ferroelectric and Negative Capacitance Devices (17 papers) and Semiconductor materials and devices (13 papers). Eszter Piros collaborates with scholars based in Germany, Spain and United Kingdom. Eszter Piros's co-authors include Lambert Alff, Stefan Petzold, Nico Kaiser, Alexander Zintler, Leopoldo Molina‐Luna, Tobias Vogel, S. U. Sharath, Christian Wenger, Keith P. McKenna and E. Miranda and has published in prestigious journals such as SHILAP Revista de lepidopterología, Nano Letters and Applied Physics Letters.

In The Last Decade

Eszter Piros

23 papers receiving 366 citations

Peers

Eszter Piros
Eszter Piros
Citations per year, relative to Eszter Piros Eszter Piros (= 1×) peers Stefan Petzold

Countries citing papers authored by Eszter Piros

Since Specialization
Citations

This map shows the geographic impact of Eszter Piros's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Eszter Piros with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Eszter Piros more than expected).

Fields of papers citing papers by Eszter Piros

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Eszter Piros. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Eszter Piros. The network helps show where Eszter Piros may publish in the future.

Co-authorship network of co-authors of Eszter Piros

This figure shows the co-authorship network connecting the top 25 collaborators of Eszter Piros. A scholar is included among the top collaborators of Eszter Piros based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Eszter Piros. Eszter Piros is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Miranda, E., Eszter Piros, Tobias Vogel, et al.. (2025). Assessing electric-field engineering of filamentary-type conduction in Cu/HfO2/Pt memristive devices using the quantum point-contact model. Applied Physics Letters. 126(21). 2 indexed citations
2.
Kaiser, Nico, Eszter Piros, Yu Duan, et al.. (2025). All HfOx-Resistive Switches with the Conducting Oxygen Vacancy Exchange Layer and Self-Limited Oxide Layer. ACS Applied Materials & Interfaces. 17(41). 57632–57643.
3.
Kaiser, Nico, Tobias Vogel, Eszter Piros, et al.. (2024). Impact of Non‐Stoichiometric Phases and Grain Boundaries on the Nanoscale Forming and Switching of HfOx Thin Films. Advanced Electronic Materials. 10(4). 5 indexed citations
4.
Zintler, Alexander, Esmaeil Adabifiroozjaei, Eszter Piros, et al.. (2024). Texture Transfer in Dielectric Layers via Nanocrystalline Networks: Insights from in Situ 4D-STEM. Nano Letters. 24(10). 2998–3004. 5 indexed citations
5.
Miranda, E., Eszter Piros, Fernando Aguirre, et al.. (2024). The Role of the Programming Trajectory in the Power Dissipation Dynamics and Energy Consumption of Memristive Devices. IEEE Electron Device Letters. 45(4). 582–585. 1 indexed citations
6.
Aguirre, Fernando, Eszter Piros, Nico Kaiser, et al.. (2024). Revealing the quantum nature of the voltage-induced conductance changes in oxygen engineered yttrium oxide-based RRAM devices. Scientific Reports. 14(1). 1122–1122. 7 indexed citations
7.
Aguirre, Fernando, Eszter Piros, Nico Kaiser, et al.. (2023). Simulation of the effect of material properties on yttrium oxide memristor-based artificial neural networks. SHILAP Revista de lepidopterología. 1(3). 1 indexed citations
8.
Vogel, Tobias, Eszter Piros, Nico Kaiser, et al.. (2023). Oxide thickness-dependent resistive switching characteristics of Cu/HfO2/Pt ECM devices. Applied Physics Letters. 122(2). 19 indexed citations
9.
Kaiser, Nico, Young-Joon Song, Eszter Piros, et al.. (2023). Crystal and Electronic Structure of Oxygen Vacancy Stabilized Rhombohedral Hafnium Oxide. ACS Applied Electronic Materials. 5(2). 754–763. 30 indexed citations
10.
Zintler, Alexander, Eszter Piros, Nico Kaiser, et al.. (2022). Controlling the Formation of Conductive Pathways in Memristive Devices. Advanced Science. 9(33). e2201806–e2201806. 15 indexed citations
11.
Aguirre, Fernando, Eszter Piros, Nico Kaiser, et al.. (2022). Fast Fitting of the Dynamic Memdiode Model to the Conduction Characteristics of RRAM Devices Using Convolutional Neural Networks. Micromachines. 13(11). 2002–2002. 6 indexed citations
12.
Vogel, Tobias, Nico Kaiser, Stefan Petzold, et al.. (2021). Defect-Induced Phase Transition in Hafnium Oxide Thin Films: Comparing Heavy Ion Irradiation and Oxygen-Engineering Effects. IEEE Transactions on Nuclear Science. 68(8). 1542–1547. 17 indexed citations
13.
Kaiser, Nico, Tobias Vogel, Alexander Zintler, et al.. (2021). Defect-Stabilized Substoichiometric Polymorphs of Hafnium Oxide with Semiconducting Properties. ACS Applied Materials & Interfaces. 14(1). 1290–1303. 40 indexed citations
14.
Petzold, Stefan, Eszter Piros, Alexander Zintler, et al.. (2020). Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching. Advanced Electronic Materials. 6(11). 30 indexed citations
15.
Piros, Eszter, Stefan Petzold, Alexander Zintler, et al.. (2020). Enhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier. Applied Physics Letters. 117(1). 30 indexed citations
16.
Grenouillet, L., Tobias Vogel, Nico Kaiser, et al.. (2020). Heavy Ion Irradiation Hardening Study on 4kb arrays HfO2-based OxRAM. HAL (Le Centre pour la Communication Scientifique Directe). 1–6.
18.
Petzold, Stefan, E. Miranda, S. U. Sharath, et al.. (2019). Analysis and simulation of the multiple resistive switching modes occurring in HfOx-based resistive random access memories using memdiodes. Journal of Applied Physics. 125(23). 24 indexed citations
19.
Petzold, Stefan, Alexander Zintler, Eszter Piros, et al.. (2019). Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices. Advanced Electronic Materials. 5(10). 68 indexed citations
20.
Petzold, Stefan, Alexander Zintler, Eszter Piros, et al.. (2019). Resistive Switching: Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices (Adv. Electron. Mater. 10/2019). Advanced Electronic Materials. 5(10). 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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