H. García

1.2k total citations
90 papers, 891 citations indexed

About

H. García is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Cellular and Molecular Neuroscience. According to data from OpenAlex, H. García has authored 90 papers receiving a total of 891 indexed citations (citations by other indexed papers that have themselves been cited), including 88 papers in Electrical and Electronic Engineering, 22 papers in Materials Chemistry and 15 papers in Cellular and Molecular Neuroscience. Recurrent topics in H. García's work include Semiconductor materials and devices (52 papers), Ferroelectric and Negative Capacitance Devices (50 papers) and Advanced Memory and Neural Computing (38 papers). H. García is often cited by papers focused on Semiconductor materials and devices (52 papers), Ferroelectric and Negative Capacitance Devices (50 papers) and Advanced Memory and Neural Computing (38 papers). H. García collaborates with scholars based in Spain, Estonia and Finland. H. García's co-authors include Helena Castán, S. Dueñas, Kaupo Kukli, L. Bailón, F. Campabadal, A. Gómez, Óscar G. Ossorio, Mireia Bargalló González, Jaan Aarik and G. González-Dı́az and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

H. García

86 papers receiving 873 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. García Spain 17 816 345 125 113 101 90 891
S. Blonkowski France 18 707 0.9× 347 1.0× 105 0.8× 145 1.3× 35 0.3× 53 802
Helena Castán Spain 18 1.2k 1.4× 474 1.4× 236 1.9× 125 1.1× 105 1.0× 143 1.3k
S. Dueñas Spain 19 1.3k 1.6× 498 1.4× 305 2.4× 135 1.2× 105 1.0× 146 1.4k
Debarghya Sarkar United States 12 524 0.6× 374 1.1× 53 0.4× 112 1.0× 94 0.9× 28 699
Doeon Lee United States 16 499 0.6× 488 1.4× 137 1.1× 166 1.5× 56 0.6× 22 813
S. Hall United Kingdom 19 1.1k 1.4× 400 1.2× 195 1.6× 100 0.9× 107 1.1× 112 1.2k
Mei Xian Low Australia 13 511 0.6× 310 0.9× 44 0.4× 162 1.4× 111 1.1× 38 693
Kow‐Ming Chang Taiwan 17 742 0.9× 275 0.8× 43 0.3× 89 0.8× 92 0.9× 90 823
Kaizhen Han Singapore 20 975 1.2× 369 1.1× 66 0.5× 75 0.7× 48 0.5× 88 1.1k
Hsin-Chieh Yu Taiwan 18 733 0.9× 365 1.1× 276 2.2× 169 1.5× 95 0.9× 66 894

Countries citing papers authored by H. García

Since Specialization
Citations

This map shows the geographic impact of H. García's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. García with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. García more than expected).

Fields of papers citing papers by H. García

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. García. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. García. The network helps show where H. García may publish in the future.

Co-authorship network of co-authors of H. García

This figure shows the co-authorship network connecting the top 25 collaborators of H. García. A scholar is included among the top collaborators of H. García based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. García. H. García is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
García, H., Eduardo Pérez, Christian Wenger, et al.. (2024). On the Asymmetry of Resistive Switching Transitions. Electronics. 13(13). 2639–2639. 1 indexed citations
2.
García, H., et al.. (2024). Reset transition in HfO2-Based memristors using a constant power signal. Materials Science in Semiconductor Processing. 186. 109037–109037.
3.
García, H., et al.. (2024). Dynamics of set and reset processes in HfO2 -based bipolar resistive switching devices. Microelectronic Engineering. 296. 112281–112281.
4.
5.
García, H., Fernando Aguirre, Mireia Bargalló González, et al.. (2023). Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices. Journal of Physics D Applied Physics. 56(36). 365108–365108. 8 indexed citations
6.
García, H., et al.. (2023). Impact of the temperature on the conductive filament morphology in HfO2-based RRAM. Materials Letters. 357. 135699–135699. 4 indexed citations
7.
García, H., Óscar G. Ossorio, Mireia Bargalló González, et al.. (2023). Effect of Temperature on the Multilevel Properties and Set and Reset Transitions in HfO2-Based Resistive Switching Devices. 1–4. 1 indexed citations
8.
Kukli, Kaupo, Lauri Aarik, S. Dueñas, et al.. (2022). Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition. Materials. 15(3). 877–877. 3 indexed citations
9.
García, H., Mireia Bargalló González, M. Zabala, et al.. (2022). Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks. Electronics. 11(3). 479–479. 6 indexed citations
10.
Jiménez-Molinos, F., H. García, Aivar Tarre, et al.. (2022). Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction. Journal of Applied Physics. 132(19). 6 indexed citations
11.
Ossorio, Óscar G., H. García, S. Dueñas, et al.. (2021). Performance Assessment of Amorphous HfO 2 -Based RRAM Devices for Neuromorphic Applications. ECS Journal of Solid State Science and Technology. 10(8). 83002–83002. 5 indexed citations
12.
García, H., Óscar G. Ossorio, S. Dueñas, et al.. (2021). Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices. Electronics. 10(22). 2816–2816. 16 indexed citations
13.
Ossorio, Óscar G., H. García, S. Dueñas, et al.. (2021). Performance Assessment of Amorphous HfO2-Based RRAM Devices for Neuromorphic Applications. ECS Transactions. 102(2). 29–35. 2 indexed citations
14.
García, H., Óscar G. Ossorio, S. Dueñas, & Helena Castán. (2020). (Invited) Current and Voltage Control of Intermediate States in Bipolar Rram Devices for Neuristor Applications. ECS Transactions. 97(1). 17–20. 1 indexed citations
15.
Dueñas, S., Helena Castán, Óscar G. Ossorio, et al.. (2020). Double Swing Quiescent-Current: An Experimental Detection Method of Ferroelectricity in Very Leaky Dielectric Films. ECS Transactions. 97(1). 3–6. 1 indexed citations
16.
Castán, Helena, S. Dueñas, H. García, et al.. (2018). Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters. Journal of Applied Physics. 124(15). 14 indexed citations
17.
García, H., Helena Castán, S. Dueñas, et al.. (2017). Advanced electrical characterization of atomic layer deposited Al<inf>2</inf>O<inf>3</inf> MIS-based structures. DIGITAL.CSIC (Spanish National Research Council (CSIC)). 1–4.
18.
García, H., Helena Castán, S. Dueñas, et al.. (2016). Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications. Nanoscale Research Letters. 11(1). 335–335. 2 indexed citations
19.
Tamm, Aile, Jekaterina Kozlova, Tõnis Arroval, et al.. (2015). Atomic Layer Deposition and Characterization of Dysprosium‐Doped Zirconium Oxide Thin Films. Chemical Vapor Deposition. 21(7-8-9). 181–187. 8 indexed citations
20.
García, H., S. Dueñas, Helena Castán, et al.. (2009). Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 27(1). 416–420. 18 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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