Alexander Hardtdegen

720 total citations
16 papers, 565 citations indexed

About

Alexander Hardtdegen is a scholar working on Electrical and Electronic Engineering, Cellular and Molecular Neuroscience and Materials Chemistry. According to data from OpenAlex, Alexander Hardtdegen has authored 16 papers receiving a total of 565 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 4 papers in Cellular and Molecular Neuroscience and 4 papers in Materials Chemistry. Recurrent topics in Alexander Hardtdegen's work include Advanced Memory and Neural Computing (12 papers), Semiconductor materials and devices (10 papers) and Ferroelectric and Negative Capacitance Devices (9 papers). Alexander Hardtdegen is often cited by papers focused on Advanced Memory and Neural Computing (12 papers), Semiconductor materials and devices (10 papers) and Ferroelectric and Negative Capacitance Devices (9 papers). Alexander Hardtdegen collaborates with scholars based in Germany, Slovakia and Poland. Alexander Hardtdegen's co-authors include Susanne Hoffmann‐Eifert, Stephan Menzel, Rainer Waser, Felix Cüppers, Moritz von Witzleben, Christopher Bengel, Hehe Zhang, Camilla La Torre, Carsten Funck and Nabeel Aslam and has published in prestigious journals such as Applied Physics Letters, Nanoscale and IEEE Transactions on Electron Devices.

In The Last Decade

Alexander Hardtdegen

16 papers receiving 558 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Alexander Hardtdegen Germany 11 515 204 88 77 77 16 565
Wenhao Chen United States 14 572 1.1× 194 1.0× 131 1.5× 36 0.5× 106 1.4× 38 678
Chih-Yang Lin Taiwan 14 505 1.0× 179 0.9× 149 1.7× 75 1.0× 110 1.4× 23 599
И. Н. Антонов Russia 16 697 1.4× 355 1.7× 127 1.4× 188 2.4× 75 1.0× 90 856
Kyung Kyu Min South Korea 14 483 0.9× 107 0.5× 105 1.2× 31 0.4× 25 0.3× 36 519
David Russell Hughart United States 13 626 1.2× 135 0.7× 63 0.7× 31 0.4× 59 0.8× 53 665
Quentin Rafhay France 15 657 1.3× 117 0.6× 119 1.4× 55 0.7× 43 0.6× 61 700
Yumin Kim South Korea 13 676 1.3× 249 1.2× 270 3.1× 71 0.9× 115 1.5× 31 778
Rohit Soni Germany 12 556 1.1× 224 1.1× 215 2.4× 90 1.2× 94 1.2× 34 679
Christian Walczyk Germany 16 868 1.7× 208 1.0× 223 2.5× 33 0.4× 137 1.8× 23 904
Fernando Aguirre Argentina 12 493 1.0× 143 0.7× 141 1.6× 44 0.6× 60 0.8× 56 571

Countries citing papers authored by Alexander Hardtdegen

Since Specialization
Citations

This map shows the geographic impact of Alexander Hardtdegen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Alexander Hardtdegen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Alexander Hardtdegen more than expected).

Fields of papers citing papers by Alexander Hardtdegen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Alexander Hardtdegen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Alexander Hardtdegen. The network helps show where Alexander Hardtdegen may publish in the future.

Co-authorship network of co-authors of Alexander Hardtdegen

This figure shows the co-authorship network connecting the top 25 collaborators of Alexander Hardtdegen. A scholar is included among the top collaborators of Alexander Hardtdegen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Alexander Hardtdegen. Alexander Hardtdegen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

16 of 16 papers shown
1.
Hardtdegen, Alexander, et al.. (2020). Cation diffusion in polycrystalline thin films of monoclinic HfO2 deposited by atomic layer deposition. APL Materials. 8(8). 9 indexed citations
2.
Bengel, Christopher, Anne Siemon, Felix Cüppers, et al.. (2020). Variability-Aware Modeling of Filamentary Oxide-Based Bipolar Resistive Switching Cells Using SPICE Level Compact Models. IEEE Transactions on Circuits and Systems I Regular Papers. 67(12). 4618–4630. 98 indexed citations
3.
Dippel, Ann‐Christin, Olof Gutowski, Ulrich Boettger, et al.. (2020). Evolution of short-range order in chemically and physically grown thin film bilayer structures for electronic applications. Nanoscale. 12(24). 13103–13112. 13 indexed citations
4.
Liu, Mingshan, Stefan Scholz, Alexander Hardtdegen, et al.. (2020). Vertical Ge Gate-All-Around Nanowire pMOSFETs With a Diameter Down to 20 nm. IEEE Electron Device Letters. 41(4). 533–536. 15 indexed citations
5.
Hardtdegen, Alexander, et al.. (2019). Memristive Devices Formed By ALD Metal Oxide Growth on a Hafnium Layer – Study of the Interfacial HfO2 Formation. ECS Meeting Abstracts. MA2019-02(27). 1232–1232. 2 indexed citations
6.
Cüppers, Felix, Stephan Menzel, Christopher Bengel, et al.. (2019). Exploiting the switching dynamics of HfO2-based ReRAM devices for reliable analog memristive behavior. APL Materials. 7(9). 108 indexed citations
7.
Hardtdegen, Alexander, Camilla La Torre, Felix Cüppers, et al.. (2018). Improved Switching Stability and the Effect of an Internal Series Resistor in HfO2/TiO<italic>x</italic> Bilayer ReRAM Cells. IEEE Transactions on Electron Devices. 65(8). 3229–3236. 95 indexed citations
8.
Menzel, Stephan, et al.. (2018). KMC Simulation of the Electroforming, Set and Reset Processes in Redox-Based Resistive Switching Devices. IEEE Transactions on Nanotechnology. 17(6). 1181–1188. 23 indexed citations
9.
Hardtdegen, Alexander, Felix Cüppers, Moritz von Witzleben, et al.. (2018). Characterization of HfO<inf>2</inf>/TiO<inf>x</inf> ReRAM Cells in Pulse Operation Mode. 1–4. 1 indexed citations
10.
Hardtdegen, Alexander, et al.. (2017). Interfaces Formed by ALD Metal Oxide Growth on Metal Layers. ECS Transactions. 80(3). 87–95. 3 indexed citations
11.
Mikulics, M., A. Winden, Roman Adam, et al.. (2016). Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes. Applied Physics Letters. 108(6). 42 indexed citations
12.
Kim, Wonjoo, Vikas Rana, Susanne Hoffmann‐Eifert, et al.. (2016). Lowering Forming Voltage and Forming-Free Behavior of Ta2O5 ReRAM Devices. RWTH Publications (RWTH Aachen). 6 indexed citations
13.
Funck, Carsten, Stephan Menzel, Nabeel Aslam, et al.. (2016). Multidimensional Simulation of Threshold Switching in NbO2 Based on an Electric Field Triggered Thermal Runaway Model. Advanced Electronic Materials. 2(7). 105 indexed citations
14.
Hardtdegen, Alexander, Camilla La Torre, Hehe Zhang, et al.. (2016). Internal Cell Resistance as the Origin of Abrupt Reset Behavior in HfO2-Based Devices Determined from Current Compliance Series. 6. 1–4. 14 indexed citations
15.
Kim, Wonjoo, Alexander Hardtdegen, Christian Rodenbücher, et al.. (2016). Forming-free metal-oxide ReRAM by oxygen ion implantation process. 4.4.1–4.4.4. 15 indexed citations
16.
Hardtdegen, Alexander, Hehe Zhang, & Susanne Hoffmann‐Eifert. (2016). Tuning the Performance of Pt/HfO2/Ti/Pt ReRAM Devices Obtained from Plasma-Enhanced Atomic Layer Deposition for HfO2 Thin Films. ECS Transactions. 75(6). 177–184. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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