M. Bissiri

615 total citations
18 papers, 466 citations indexed

About

M. Bissiri is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, M. Bissiri has authored 18 papers receiving a total of 466 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Atomic and Molecular Physics, and Optics, 14 papers in Electrical and Electronic Engineering and 10 papers in Condensed Matter Physics. Recurrent topics in M. Bissiri's work include Semiconductor Quantum Structures and Devices (17 papers), GaN-based semiconductor devices and materials (10 papers) and Semiconductor materials and devices (7 papers). M. Bissiri is often cited by papers focused on Semiconductor Quantum Structures and Devices (17 papers), GaN-based semiconductor devices and materials (10 papers) and Semiconductor materials and devices (7 papers). M. Bissiri collaborates with scholars based in Italy, Germany and United States. M. Bissiri's co-authors include M. Capizzi, A. Polimeni, G. Baldassarri Höger von Högersthal, M. Fischer, A. Forchel, M. Reinhardt, Stefano Franchi, A. Frova, Francesco Masia and P.A. Frigeri and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

M. Bissiri

18 papers receiving 453 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Bissiri Italy 13 394 281 206 117 37 18 466
V. G. Mokerov Russia 11 253 0.6× 234 0.8× 77 0.4× 89 0.8× 31 0.8× 76 350
Kaoru Ojima Japan 13 254 0.6× 201 0.7× 80 0.4× 94 0.8× 61 1.6× 21 348
A. Chenevas-Paule France 12 238 0.6× 356 1.3× 95 0.5× 190 1.6× 31 0.8× 30 452
J. Viernow United States 9 393 1.0× 221 0.8× 68 0.3× 193 1.6× 82 2.2× 10 539
M. Ozeki Japan 12 364 0.9× 396 1.4× 105 0.5× 130 1.1× 54 1.5× 36 487
Yukie Nishikawa Japan 14 350 0.9× 476 1.7× 114 0.6× 234 2.0× 18 0.5× 42 576
J. Nürnberger Germany 14 477 1.2× 371 1.3× 78 0.4× 276 2.4× 28 0.8× 43 608
A. Savage United States 7 308 0.8× 292 1.0× 33 0.2× 153 1.3× 42 1.1× 8 412
C. E. McCants United States 12 471 1.2× 480 1.7× 49 0.2× 115 1.0× 64 1.7× 21 623
C. Anayama Japan 11 295 0.7× 303 1.1× 73 0.4× 71 0.6× 40 1.1× 25 378

Countries citing papers authored by M. Bissiri

Since Specialization
Citations

This map shows the geographic impact of M. Bissiri's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Bissiri with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Bissiri more than expected).

Fields of papers citing papers by M. Bissiri

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Bissiri. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Bissiri. The network helps show where M. Bissiri may publish in the future.

Co-authorship network of co-authors of M. Bissiri

This figure shows the co-authorship network connecting the top 25 collaborators of M. Bissiri. A scholar is included among the top collaborators of M. Bissiri based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Bissiri. M. Bissiri is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

18 of 18 papers shown
1.
Endicott, J, A. Patanè, Jordi Ibáñez, et al.. (2003). Magnetotunneling Spectroscopy of Dilute Ga(AsN) Quantum Wells. Physical Review Letters. 91(12). 126802–126802. 44 indexed citations
2.
Högersthal, G. Baldassarri Höger von, A. Polimeni, Francesco Masia, et al.. (2003). Magnetophotoluminescence studies of (InGa)(AsN)/GaAs heterostructures. Physical review. B, Condensed matter. 67(23). 35 indexed citations
3.
Polimeni, A., M. Bissiri, G. Baldassarri Höger von Högersthal, et al.. (2003). Hydrogen as a probe of the electronic properties of (InGa)(AsN)/GaAs heterostructures. Solid-State Electronics. 47(3). 447–453. 3 indexed citations
4.
Polimeni, A., Francesco Masia, Marco Felici, et al.. (2003). Hydrogen-related effects in diluted nitrides. Physica B Condensed Matter. 340-342. 371–376. 3 indexed citations
5.
Polimeni, A., M. Bissiri, Marco Felici, et al.. (2003). Nitrogen passivation induced by atomic hydrogen: TheGaP1yNycase. Physical review. B, Condensed matter. 67(20). 45 indexed citations
6.
Masia, Francesco, A. Polimeni, G. Baldassarri Höger von Högersthal, et al.. (2003). Early manifestation of localization effects in diluted Ga(AsN). Applied Physics Letters. 82(25). 4474–4476. 42 indexed citations
7.
Polimeni, A., M. Bissiri, A. Augieri, et al.. (2002). Reduced temperature dependence of the band gap inGaAs1yNyinvestigated with photoluminescence. Physical review. B, Condensed matter. 65(23). 19 indexed citations
8.
Bissiri, M., G. Baldassarri Höger von Högersthal, A. Polimeni, et al.. (2002). Hydrogen-induced passivation of nitrogen inGaAs1yNy. Physical review. B, Condensed matter. 65(23). 23 indexed citations
9.
Bissiri, M., G. Baldassarri Höger von Högersthal, A. Polimeni, et al.. (2002). Role of N clusters inInxGa1xAs1yNyband-gap reduction. Physical review. B, Condensed matter. 66(3). 14 indexed citations
10.
Polimeni, A., M. Bissiri, M. Capizzi, et al.. (2002). Role of hydrogen in III N V compound semiconductors. Semiconductor Science and Technology. 17(8). 797–802. 22 indexed citations
11.
Capizzi, M., A. Polimeni, M. Bissiri, et al.. (2002). Photoluminescence and Infrared Absorption Study of Isoelectronic Impurity Passivation by Hydrogen. MRS Proceedings. 719. 1 indexed citations
12.
Bissiri, M., et al.. (2001). In x Ga 1-x As量子ドットの励起状態に対する量子サイズ効果と形状効果. Physical Review B. 64(24). 1–245337. 48 indexed citations
13.
Bissiri, M., A. Polimeni, M. Capizzi, et al.. (2001). Hydrogen-induced band gap tuning of (InGa)(AsN)/GaAs single quantum wells. Applied Physics Letters. 78(22). 3472–3474. 72 indexed citations
14.
Bissiri, M., A. Polimeni, G. Baldassarri Höger von Högersthal, et al.. (2001). High temperature photoluminescence efficiency and thermal stability of (InGa)(AsN)/GaAs quantum wells. Applied Physics Letters. 79(16). 2585–2587. 17 indexed citations
15.
Bissiri, M., G. Baldassarri Höger von Högersthal, M. Capizzi, P. Frigeri, & Stefano Franchi. (2001). Quantum size and shape effects on the excited states ofInxGa1xAsquantum dots. Physical review. B, Condensed matter. 64(24). 21 indexed citations
16.
Polimeni, A., G. Baldassarri Höger von Högersthal, M. Bissiri, et al.. (2001). Interplay of nitrogen and hydrogen in InxGa1−xAs1−yNy/GaAs heterostructures. Physica B Condensed Matter. 308-310. 850–853. 5 indexed citations
17.
Bissiri, M., et al.. (2001). Polaron Interaction in InAs/GaAs Quantum Dots and Resonant Photoluminescence. physica status solidi (b). 224(3). 639–642. 9 indexed citations
18.
Bissiri, M., G. Baldassarri Höger von Högersthal, Arshad Saleem Bhatti, et al.. (2000). Optical evidence of polaron interaction in InAs/GaAs quantum dots. Physical review. B, Condensed matter. 62(7). 4642–4646. 43 indexed citations

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