A. G. Cullis

4.0k citations

37 papers · 3.3k indexed · 2 hit papers · h-index 18

Impact in

Materials Chemistry top 1%
- Silicon Nanostructures and Photoluminescence
- Quantum Dots Synthesis And Properties
Biomedical Engineering top 1%
- Nanowire Synthesis and Applications

Papers in

Condensed Matter Physics 10
- GaN-based semiconductor devices and materials 10
Structural Biology 1

Co-authors: Leigh Canham P. D. J. Calcott N. G. Chew J. D. Benjamin M.I.J. Beale Michael J. Uren P. J. Parbrook Jie Bai
Journals: Applied Physics Letters (8 papers)Journal of Crystal Growth (8 papers)Journal of Applied Physics (6 papers)Surface Science (2 papers)Applied Surface Science (1 paper)
Partner nations: United Kingdom Taiwan India

In The Last Decade

A. G. Cullis

36 papers receiving 3.2k citations

Hit Papers

align trajectories log scale

The structural and luminescence properties of porous silicon 1997 · 2.0k citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

1997 Journal of Applied Physics
1985 Journal of Crystal Growth

Peers

Countries citing papers authored by A. G. Cullis

Since Specialization

Citations

This map shows the geographic impact of A. G. Cullis's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. G. Cullis with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. G. Cullis more than expected).

Fields of papers citing papers by A. G. Cullis

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. G. Cullis. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. G. Cullis. The network helps show where A. G. Cullis may publish in the future.

Co-authors

The 25 scholars most cited alongside A. G. Cullis, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. G. Cullis Line = papers co-authored together A. G. Cullis links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Bi incorporation in GaAs(100)-2×1 and 4×3 reconstructions investigated by RHEED and STM Journal of Crystal Growth ·F. Bastiman, A. G. Cullis, J. P. R. David, Stephen J. Sweeney	2011	38
2	Study of annealed InAs/GaAs quantum dot structures Journal of Physics Conference Series ·Yang Qiu, Z. Y. Zhang, R. A. Hogg, A. G. Cullis, T Walther	2010	8
3	Non‐polar AlN and GaN/AlN on r‐plane sapphire Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Fabio Ranalli, P. J. Parbrook, Jie Bai, Kean B. Lee, Tao Wang, A. G. Cullis	2009	11
4	GaAs(001) (2×4) to c(4×4) transformation observed in situ by STM during As flux irradiation Surface Science ·F. Bastiman, A. G. Cullis, M. Hopkinson	2009	4
5	Optical and microstructural study of a single layer of InGaN quantum dots Journal of Applied Physics ·Jing Bai, Qi Wang, T. Wang, A. G. Cullis, P. J. Parbrook	2009	24
6	InAs/GaAs(001) wetting layer formation observed in situ by concurrent MBE and STM Surface Science ·F. Bastiman, A. G. Cullis, M. Hopkinson	2009	7
7	Ultra-sensitive polysilicon wire glucose sensor using a 3-aminopropyltriethoxysilane and polydimethylsiloxane-treated hydrophobic fumed silica nanoparticle mixture as the sensing membrane Sensors and Actuators B Chemical ·Po-Yen Hsu, Jing‐Jenn Lin, You‐Lin Wu, Wen-Chang Hung, A. G. Cullis	2009	19
8	Influence of annealing temperature on optical properties of InGaN quantum dot based light emitting diodes Applied Physics Letters ·Qi Wang, T. Wang, Jie Bai, A. G. Cullis, P. J. Parbrook, F. Ranalli	2008	22
9	Growth and optical investigation of self-assembled InGaN quantum dots on a GaN surface using a high temperature AlN buffer Journal of Applied Physics ·Qi Wang, Ti Wang, Jie Bai, A. G. Cullis, P. J. Parbrook, F. Ranalli	2008	35
10	Effect of GaAs polycrystal on the size and areal density of InAs quantum dots in selective area molecular beam epitaxy Journal of Crystal Growth ·Jie Lin, R. A. Hogg, P. W. Fry, M. Hopkinson, I M Ross, A. G. Cullis, R. S. Kolodka, A. I. Tartakovskii, M. S. Skolnick	2006	3
11	V-shaped pits formed at the GaN/AlN interface Journal of Crystal Growth ·Jie Bai, Tongyue Wang, P. J. Parbrook, I M Ross, A. G. Cullis	2006	20
12	Air-bridged lateral growth of an Al0.98Ga0.02N layer by introduction of porosity in an AlN buffer Applied Physics Letters ·T. Wang, Jie Bai, P. J. Parbrook, A. G. Cullis	2005	46
13	Influence of In composition on the photoluminescence emission of In(Ga)As quantum dot bilayers Physica E Low-dimensional Systems and Nanostructures ·M. A. Migliorato, M. J. Steer, W. M. Soong, C. M. Tey, H-Y. Liu, S. L. Liew, P. Navaretti, David J. Norris, A. G. Cullis, M. Hopkinson	2004	2
14	Structural and optical studies of vertically aligned InAs/GaAs self-assembled quantum dots Journal of Applied Physics ·M. A. Migliorato, L. R. Wilson, D. J. Mowbray, M. S. Skolnick, M. Al-Khafaji, A. G. Cullis, M. Hopkinson	2001	36
15	The structural and luminescence properties of porous silicon Journal of Applied Physics ·A. G. Cullis, Leigh Canham, P. D. J. Calcott Hit paper breakdown →	1997	2047
16	Demonstration of quantum confinement in InSb-In1−xAlxSb multiquantum wells using photoluminescence spectroscopy Applied Physics Letters ·M. K. Saker, D. M. Whittaker, M. S. Skolnick, C. F. McConville, C. R. Whitehouse, S. J. Barnett, A. D. Pitt, A. G. Cullis, G. M. Williams	1994	15
17	The formation of porous silicon by chemical stain etches Journal of Crystal Growth ·M.I.J. Beale, J. D. Benjamin, Michael J. Uren, N. G. Chew, A. G. Cullis	1986	41
18	Large area, uniform silicon-on-insulator using a buried layer of oxidized porous silicon Applied Physics Letters ·J. D. Benjamin, J.M. Keen, A. G. Cullis, B. Innes, N. G. Chew	1986	20
19	An experimental and theoretical study of the formation and microstructure of porous silicon Journal of Crystal Growth ·M.I.J. Beale, J. D. Benjamin, Michael J. Uren, N. G. Chew, A. G. Cullis Hit paper breakdown →	1985	415
20	A study of silicon MBE on porous silicon substrates Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·M.I.J. Beale, N. G. Chew, A. G. Cullis, D. B. Gasson, R. W. Hardeman, David Robbins, Iain M. Young	1985	15

About A. G. Cullis

A. G. Cullis is a scholar working on Condensed Matter Physics, Structural Biology, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Bioengineering, having authored 37 papers that have together received 3.3k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (18 papers), Semiconductor materials and devices (12 papers), GaN-based semiconductor devices and materials (10 papers), Advanced Semiconductor Detectors and Materials (10 papers), Nanowire Synthesis and Applications (8 papers), Silicon Nanostructures and Photoluminescence (7 papers), Ga2O3 and related materials (6 papers) and Semiconductor Lasers and Optical Devices (6 papers). The work is most often cited by research in Materials Chemistry (2.9k citations), Biomedical Engineering (2.2k citations), Electrical and Electronic Engineering (2.1k citations), Atomic and Molecular Physics, and Optics (654 citations) and Condensed Matter Physics (230 citations). A. G. Cullis has collaborated with scholars based in United Kingdom, Taiwan and India. Frequent co-authors include Leigh Canham, P. D. J. Calcott, N. G. Chew, J. D. Benjamin, M.I.J. Beale, Michael J. Uren, P. J. Parbrook, Jie Bai, C. Pickering and O. D. Dosser. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, Journal of Applied Physics, Surface Science and Applied Surface Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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