R.N. Thomas

1.7k total citations
47 papers, 1.3k citations indexed

About

R.N. Thomas is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, R.N. Thomas has authored 47 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Electrical and Electronic Engineering, 17 papers in Atomic and Molecular Physics, and Optics and 13 papers in Materials Chemistry. Recurrent topics in R.N. Thomas's work include Silicon and Solar Cell Technologies (17 papers), Semiconductor materials and devices (16 papers) and Semiconductor materials and interfaces (11 papers). R.N. Thomas is often cited by papers focused on Silicon and Solar Cell Technologies (17 papers), Semiconductor materials and devices (16 papers) and Semiconductor materials and interfaces (11 papers). R.N. Thomas collaborates with scholars based in United States, Germany and Israel. R.N. Thomas's co-authors include D.K. Schroder, H. McD. Hobgood, J. C. Swartz, M. H. Francombe, H.C. Nathanson, T.T. Braggins, D.L. Barrett, G.W. Eldridge, A. Rohatgi and B. W. Swanson and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

R.N. Thomas

46 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R.N. Thomas United States 22 1.0k 618 416 190 115 47 1.3k
L. Jastrzȩbski United States 21 1.6k 1.6× 933 1.5× 622 1.5× 212 1.1× 96 0.8× 114 1.9k
Seijiro Furukawa Japan 20 952 0.9× 618 1.0× 398 1.0× 138 0.7× 254 2.2× 99 1.3k
P. M. Amirtharaj United States 16 1.0k 1.0× 561 0.9× 681 1.6× 231 1.2× 137 1.2× 48 1.3k
J. Weber Germany 19 842 0.8× 681 1.1× 615 1.5× 110 0.6× 107 0.9× 52 1.2k
P. M. J. Marée Netherlands 9 599 0.6× 805 1.3× 357 0.9× 113 0.6× 87 0.8× 12 1.1k
D.K. Schroder United States 20 1.7k 1.6× 780 1.3× 481 1.2× 242 1.3× 75 0.7× 62 1.8k
J.C. Irvin United States 12 1.3k 1.2× 782 1.3× 367 0.9× 141 0.7× 96 0.8× 29 1.5k
V. Swaminathan United States 20 1.1k 1.0× 969 1.6× 303 0.7× 109 0.6× 89 0.8× 87 1.3k
C. R. Wie United States 20 876 0.8× 671 1.1× 368 0.9× 136 0.7× 255 2.2× 83 1.2k
T. Y. Tan United States 17 818 0.8× 950 1.5× 438 1.1× 126 0.7× 112 1.0× 47 1.4k

Countries citing papers authored by R.N. Thomas

Since Specialization
Citations

This map shows the geographic impact of R.N. Thomas's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R.N. Thomas with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R.N. Thomas more than expected).

Fields of papers citing papers by R.N. Thomas

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R.N. Thomas. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R.N. Thomas. The network helps show where R.N. Thomas may publish in the future.

Co-authorship network of co-authors of R.N. Thomas

This figure shows the co-authorship network connecting the top 25 collaborators of R.N. Thomas. A scholar is included among the top collaborators of R.N. Thomas based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R.N. Thomas. R.N. Thomas is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Thomas, R.N., et al.. (2000). Peculiarity of the thermoluminescence of ruby. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 166-167. 198–203.
2.
Thomas, R.N., et al.. (1993). Meeting device needs through melt growth of large-diameter elemental and compound semiconductors. Progress in Crystal Growth and Characterization of Materials. 26. 219–253. 6 indexed citations
3.
Hobgood, H. McD., T. Henningsen, R.N. Thomas, et al.. (1993). ZnGeP2 grown by the liquid encapsulated Czochralski method. Journal of Applied Physics. 73(8). 4030–4037. 51 indexed citations
4.
Swanson, B. W., et al.. (1989). The low thermal stress HP-LEC growth of 75 mm diameter In-DOPED GaAs crystals. Journal of Crystal Growth. 94(1). 75–84. 9 indexed citations
5.
Guruswamy, Sivaraman, et al.. (1989). Influence of solute doping on the high-temperature deformation behavior of GaAs. Journal of Applied Physics. 65(6). 2508–2512. 14 indexed citations
6.
Clarke, R.C., D.L. Barrett, G.W. Eldridge, & R.N. Thomas. (1987). Subsurface Damage in Semi-Insulating GaAs Substrates. 41–44. 1 indexed citations
7.
Hobgood, H. McD., B. W. Swanson, & R.N. Thomas. (1987). Czochralski growth of CdTe and CdMnTe from liquid encapsulated melts. Journal of Crystal Growth. 85(3). 510–520. 22 indexed citations
8.
Thomas, R.N., et al.. (1986). Growth and properties of large-diameter indium lattice-hardened GaAs crystals. Journal of Crystal Growth. 76(2). 217–232. 30 indexed citations
9.
Barrett, D.L., et al.. (1985). Effect of Dislocations on Gallium Arsenide FETs. 1 indexed citations
10.
Hobgood, H. McD., et al.. (1982). Effects of stoichiometry on thermal stability of undoped, semi-insulating GaAs. Journal of Applied Physics. 53(8). 5771–5775. 86 indexed citations
11.
Swartz, J. C., et al.. (1980). Optical excitation spectra of selenium-doped silicon. Solid State Communications. 36(4). 331–334. 30 indexed citations
12.
Thomas, R.N.. (1980). Advances in bulk silicon and gallium arsenide materials technology. 13–17. 1 indexed citations
13.
Schroder, D.K., R.N. Thomas, & J. C. Swartz. (1978). Free Carrier Absorption in Silicon. IEEE Journal of Solid-State Circuits. 13(1). 180–187. 149 indexed citations
14.
Thomas, R.N., T.T. Braggins, H. McD. Hobgood, & W. J. Takei. (1978). Compensation of residual boron impurities in extrinsic indium-doped silicon by neutron transmutation of silicon. Journal of Applied Physics. 49(5). 2811–2820. 34 indexed citations
15.
Braggins, T.T., H. McD. Hobgood, W. J. Takei, & R.N. Thomas. (1977). IIa-7 compensation of residual boron in extrinsic Si:In detectors by neutron transmutation of silicon. IEEE Transactions on Electron Devices. 24(9). 1195–1195. 1 indexed citations
16.
Thomas, R.N., R.A. Wickstrom, D.K. Schroder, & H.C. Nathanson. (1974). Fabrication and some applications of large-area silicon field emission arrays. Solid-State Electronics. 17(2). 155–IN7. 62 indexed citations
17.
Thomas, R.N., D.K. Schroder, & H.C. Nathanson. (1974). Abstract: Photosensitive field emission from silicon. Journal of Vacuum Science and Technology. 11(1). 85–85. 1 indexed citations
18.
Schroder, D.K., et al.. (1974). The semiconductor field-emission photocathode. IEEE Transactions on Electron Devices. 21(12). 785–798. 60 indexed citations
19.
Thomas, R.N. & M. H. Francombe. (1971). Influence of impurities on the surface structures and fault generation in homoepitaxial Si (111) films. Surface Science. 25(2). 357–378. 31 indexed citations
20.
Thomas, R.N. & M. H. Francombe. (1970). INFLUENCE OF IMPURITIES ON Si (111) SURFACE STRUCTURES. Applied Physics Letters. 17(2). 80–83. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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