H. Jorke

2.1k total citations · 1 hit paper
55 papers, 1.5k citations indexed

About

H. Jorke is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, H. Jorke has authored 55 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 53 papers in Electrical and Electronic Engineering, 35 papers in Atomic and Molecular Physics, and Optics and 11 papers in Materials Chemistry. Recurrent topics in H. Jorke's work include Semiconductor materials and devices (27 papers), Semiconductor Quantum Structures and Devices (22 papers) and Advancements in Semiconductor Devices and Circuit Design (16 papers). H. Jorke is often cited by papers focused on Semiconductor materials and devices (27 papers), Semiconductor Quantum Structures and Devices (22 papers) and Advancements in Semiconductor Devices and Circuit Design (16 papers). H. Jorke collaborates with scholars based in Germany and United States. H. Jorke's co-authors include H.-J. Herzog, H. Kibbel, G. Abstreiter, E. Kasper, H. Brugger, Thomas Wolf, F. Schäffler, Heinrich Daembkes, E. Friess and S. Mantl and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

H. Jorke

54 papers receiving 1.5k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices

1985 385 citations G. Abstreiter, H. Brugger et al. profile →

Peers

Countries citing papers authored by H. Jorke

Since Specialization

Citations

This map shows the geographic impact of H. Jorke's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Jorke with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Jorke more than expected).

Fields of papers citing papers by H. Jorke

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Jorke. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Jorke. The network helps show where H. Jorke may publish in the future.

Co-authorship network of co-authors of H. Jorke

This figure shows the co-authorship network connecting the top 25 collaborators of H. Jorke. A scholar is included among the top collaborators of H. Jorke based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Jorke. H. Jorke is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Experimental verification of the resonance phase transistor concept 2004 ·R. Wanner, G.R. Olbrich, H. Jorke, J.-F. Luy�, (unknown), E. Kasper, P. Russer	2
2	SiGe resonance phase transistor: active transistor operation beyond the transit frequency fT 2004 ·Solid-State Electronics ·E. Kasper, (unknown), H. Jorke, J.-F. Luy�, H. Kibbel, M. W. Dashiell, Oliver G. Schmidt, M. Stoffel	9
3	Resonance phase operation of bipolar transistors 2003 ·H. Jorke, Martin Schäfer	2
4	Tunnelling currents in very narrow p+–n+ junctions 1998 ·Thin Solid Films ·(unknown), E. Kasper, H. Kibbel, H. Jorke	4
5	Coplanar Ka-band SiGe-MMIC amplifier 1995 ·Electronics Letters ·K.M. Strohm, J.-F. Luy�, F. Schäffler, H. Jorke, (unknown), (unknown), Ralf Doerner, John Gerdes, (unknown), W. Heinrich	17
6	Molecular-beam epitaxy of strained silicon germanium/silicon structures 1992 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·E. Kasper, H. Jorke	16
7	Influence of thermal annealing on the electron mobility in modulation doped Si/SiGe heterostructures 1991 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·F. Schäffler, (unknown), H. Jorke, E. Kasper	12
8	Sb doping and electrical characteristics of ultrathin SinGem superlattices 1990 ·Journal of Applied Physics ·H. Presting, H. Kibbel, E. Kasper, H. Jorke	6
9	Boron delta doping in Si and Si0.8Ge0.2 layers 1990 ·Applied Physics Letters ·H. Jorke, H. Kibbel	51
10	A comparison of electrical and chemical profiling of doping superlattices in silicon 1990 ·Journal of Applied Physics ·(unknown), H. Jorke, (unknown), (unknown), (unknown)	2
11	Formation of artificially orderedSimSbnalloys 1990 ·Physical review. B, Condensed matter ·H. Jorke, H.-J. Herzog, H. Kibbel, P. Eichinger	0
12	Gallium doping of silicon molecular beam epitaxial layers at low temperatures and under Si+ ion bombardment 1990 ·Thin Solid Films ·F. Schäffler, H. Jorke	7
13	Improved Design Study for Doping by Secondary Implantation 1989 ·Journal of The Electrochemical Society ·H. Jorke, (unknown), H. Kibbel, H.-J. Herzog	2
14	Ion implantation in Si/Si1−xGex epitaxial layers and superlattices 1989 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·S. Mantl, B. Holländer, W. Jäger, B. Kabius, H. Jorke, E. Kasper	14
15	Very low temperature growth and doping of silicon MBE layers 1989 ·Journal of Crystal Growth ·H. Jorke, H. Kibbel, F. Schäffler, (unknown), H.-J. Herzog, E. Kasper	4
16	Symmetrically strained Si/Ge superlattices on Si substrates 1988 ·Physical review. B, Condensed matter ·E. Kasper, H. Kibbel, H. Jorke, H. Brugger, E. Friess, G. Abstreiter	117
17	Strain Measurements in Si/Si_0.5Ge_0.5 Superlattices by He Ion Channeling 1987 ·MRS Proceedings ·S. Mantl, E. Kasper, H. Jorke	3
18	Doping by Secondary Implantation 1986 ·Journal of The Electrochemical Society ·H. Jorke, H. Kibbel	35
19	Dispersion of folded phonons in superlattices 1986 ·Superlattices and Microstructures ·H. Brugger, (unknown), G. Abstreiter, H. Jorke, H.-J. Herzog, E. Kasper	15
20	Mobility Enhancement in Modulation‐Doped Si ‐ Si1 − x Ge x Superlattice Grown by Molecular Beam Epitaxy 1986 ·Journal of The Electrochemical Society ·H. Jorke, H.-J. Herzog	24

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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