A. W. Higgs

480 total citations
24 papers, 369 citations indexed

About

A. W. Higgs is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, A. W. Higgs has authored 24 papers receiving a total of 369 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 17 papers in Atomic and Molecular Physics, and Optics and 4 papers in Materials Chemistry. Recurrent topics in A. W. Higgs's work include Semiconductor Quantum Structures and Devices (17 papers), Semiconductor Lasers and Optical Devices (8 papers) and Quantum and electron transport phenomena (8 papers). A. W. Higgs is often cited by papers focused on Semiconductor Quantum Structures and Devices (17 papers), Semiconductor Lasers and Optical Devices (8 papers) and Quantum and electron transport phenomena (8 papers). A. W. Higgs collaborates with scholars based in United Kingdom and Australia. A. W. Higgs's co-authors include J. C. Gill, G. W. Smith, D C Herbert, M. S. Skolnick, C. R. Whitehouse, D.G. Hayes, L. Eaves, P.E. Simmonds, O. H. Hughes and M. Henini and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

A. W. Higgs

23 papers receiving 341 citations

Peers

A. W. Higgs

AMPO

EEE

EOMM

CMP

Nagaatsu Ogasawara Japan

P.I. Kuindersma Netherlands

F. Xue Switzerland

G. Pakulski Canada

M. Y. Su United States

F. Nastos Canada

Tomas Polakovic United States

JD Ganière Switzerland

A. Kozen Japan

K. I. Gerasimov Russia

Nagaatsu Ogasawara Japan

A. W. Higgs

402 ×1.4

AMPO

452 ×1.9

EEE

78 ×1.1

EOMM

57 ×0.9

23 ×0.5

CMP

Citations per year, relative to A. W. Higgs A. W. Higgs (= 1×) peers Nagaatsu Ogasawara

Countries citing papers authored by A. W. Higgs

Since Specialization

Citations

This map shows the geographic impact of A. W. Higgs's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. W. Higgs with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. W. Higgs more than expected).

Fields of papers citing papers by A. W. Higgs

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. W. Higgs. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. W. Higgs. The network helps show where A. W. Higgs may publish in the future.

Co-authorship network of co-authors of A. W. Higgs

This figure shows the co-authorship network connecting the top 25 collaborators of A. W. Higgs. A scholar is included among the top collaborators of A. W. Higgs based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. W. Higgs. A. W. Higgs is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Plimmer, S.A., G.J. Rees, R. Grey, et al.. (1997). Impact ionization in thin AlxGa1−xAs (x=0.15 and 0.30) p-i-n diodes. Journal of Applied Physics. 82(3). 1231–1235. 20 indexed citations

Plimmer, S.A., J.P.R. David, D C Herbert, et al.. (1996). Investigation of impact ionization in thin GaAs diodes. IEEE Transactions on Electron Devices. 43(7). 1066–1072. 63 indexed citations

Higgs, A. W., et al.. (1994). Observation of miniband transport in GaAs/Al0.33Ga0.67As superlattices. Journal of Applied Physics. 75(1). 320–324. 23 indexed citations

Austing, D. G., et al.. (1993). X- and Γ-related tunneling resonances in GaAs/AlAs double-barrier structures at high pressure. Physical review. B, Condensed matter. 47(3). 1419–1433. 21 indexed citations

Kelly, Michael J., et al.. (1993). New day dawning for tunnelling devices?. Physics World. 6(5). 22–24. 1 indexed citations

Lovering, D. J., G. J. Denton, Andrew Gregory, et al.. (1993). Tunnelling dynamics of holes in GaAs/Al_0.33Ga_0.67As double-barrier resonant tunnelling structures studied by time-resolved photoluminescence spectroscopy. Journal of Physics Condensed Matter. 5(17). 2825–2835. 6 indexed citations

Skolnick, M. S., et al.. (1992). Optical spectroscopy of a double-barrier resonant-tunneling structure containing a narrow-gap, strained-layer, quantum-well region. Physical review. B, Condensed matter. 46(3). 1505–1512. 6 indexed citations

Skolnick, M. S., P.E. Simmonds, D.G. Hayes, et al.. (1992). Electron transport in double-barrier resonant tunnelling structures studied by optical spectroscopy. Semiconductor Science and Technology. 7(3B). B401–B408. 4 indexed citations

Skolnick, M. S., D.G. Hayes, C.R.H. White, et al.. (1991). Optical Spectroscopy of Double Barrier Resonant Tunneling Structures. Physica Scripta. T39. 271–277. 2 indexed citations

10.

Higgs, A. W., et al.. (1990). Conduction-band offset and differential-conductance studies of a 20 nm wide, In_0.53Ga_0.47As/InP, single-barrier structure. Semiconductor Science and Technology. 5(6). 581–585. 1 indexed citations

11.

Skolnick, M. S., P.E. Simmonds, D.G. Hayes, et al.. (1990). Excitation mechanisms of photoluminescence in double-barrier resonant-tunneling structures. Physical review. B, Condensed matter. 42(5). 3069–3076. 38 indexed citations

12.

Skolnick, M. S., D.G. Hayes, P.E. Simmonds, et al.. (1990). Electronic processes in double-barrier resonant-tunneling structures studied by photoluminescence spectroscopy in zero and finite magnetic fields. Physical review. B, Condensed matter. 41(15). 10754–10766. 67 indexed citations

13.

Skolnick, M. S., A. W. Higgs, P.E. Simmonds, et al.. (1990). Electronic processes in double barrier resonant tunneling structures investigated by optical spectroscopy. Surface Science. 229(1-3). 185–188. 2 indexed citations

14.

Pritchard, R., D. G. Austing, P. C. Klipstein, et al.. (1990). The suppression by pressure of negative differential resistance in GaAs/GaAlAs double barrier structures. Journal of Applied Physics. 68(1). 205–211. 12 indexed citations

15.

Higgs, A. W., N. Apsley, Michael J. Kane, et al.. (1990). Electrical characteristics of low dimensional InGaAs-InP structures.

16.

Higgs, A. W., et al.. (1988). Resonant tunnelling in Ga _0.47 In _0.53 As/InP double-barrier structures grown by AP-MOCVD. Electronics Letters. 24(6). 322–323. 5 indexed citations

17.

Higgs, A. W.. (1986). A system for measuring complex permittivity at microwave frequencies. Journal of Physics E Scientific Instruments. 19(12). 1019–1025. 2 indexed citations

18.

Skiff, W. M., et al.. (1985). Time-Resolved Electron Energy Loss Spectroscopy on Copper Oxides. Proceedings annual meeting Electron Microscopy Society of America. 43. 408–409. 2 indexed citations

19.

Higgs, A. W. & J. C. Gill. (1983). Hysteresis in the electrical properties of orthorhombic tantalum trisulphide: Evidence for an incommensurate-commensurate charge-density wave transition?. Solid State Communications. 47(9). 737–742. 75 indexed citations

20.

Gill, J. C. & A. W. Higgs. (1983). On the origin of quasi-periodic current noise in charge-density wave conductors: Experiments on orthorhombic tantalum trisulphide. Solid State Communications. 48(8). 709–713. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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