S. Anantathanasarn

788 total citations
36 papers, 617 citations indexed

About

S. Anantathanasarn is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, S. Anantathanasarn has authored 36 papers receiving a total of 617 indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Electrical and Electronic Engineering, 25 papers in Atomic and Molecular Physics, and Optics and 7 papers in Materials Chemistry. Recurrent topics in S. Anantathanasarn's work include Semiconductor Lasers and Optical Devices (23 papers), Semiconductor Quantum Structures and Devices (19 papers) and Photonic and Optical Devices (14 papers). S. Anantathanasarn is often cited by papers focused on Semiconductor Lasers and Optical Devices (23 papers), Semiconductor Quantum Structures and Devices (19 papers) and Photonic and Optical Devices (14 papers). S. Anantathanasarn collaborates with scholars based in Netherlands, Japan and Germany. S. Anantathanasarn's co-authors include R. Nötzel, P. J. van Veldhoven, T. J. Eijkemans, M.K. Smit, E.A.J.M. Bente, Hideki Hasegawa, Hideki Hasegawa, Tamotsu Hashizume, F. W. M. van Otten and Noboru Negoro and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Optics Express.

In The Last Decade

S. Anantathanasarn

32 papers receiving 596 citations

Peers

S. Anantathanasarn
D.G. Hayes United Kingdom
Osamu Moriwaki Japan
V. P. Evtikhiev Russia
M. Mannoh Japan
M. Dumitrescu Finland
O. Drisse France
H. Jung Germany
G. Karczewski Poland
B. D. McCombe United States
J. Nürnberger Germany
D.G. Hayes United Kingdom
S. Anantathanasarn
Citations per year, relative to S. Anantathanasarn S. Anantathanasarn (= 1×) peers D.G. Hayes

Countries citing papers authored by S. Anantathanasarn

Since Specialization
Citations

This map shows the geographic impact of S. Anantathanasarn's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Anantathanasarn with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Anantathanasarn more than expected).

Fields of papers citing papers by S. Anantathanasarn

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Anantathanasarn. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Anantathanasarn. The network helps show where S. Anantathanasarn may publish in the future.

Co-authorship network of co-authors of S. Anantathanasarn

This figure shows the co-authorship network connecting the top 25 collaborators of S. Anantathanasarn. A scholar is included among the top collaborators of S. Anantathanasarn based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Anantathanasarn. S. Anantathanasarn is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Takasaka, Shigehiro, et al.. (2023). Forward pumped distributed Raman amplification in C and L bands using incoherent first-order and coherent second-order pumps. IET conference proceedings.. 2023(34). 174–177.
2.
Nagai, Kyoko, et al.. (2022). 8-Channel CWDM TOSA for CPO External Laser Sources. 68–71. 4 indexed citations
3.
Heck, Martijn J. R., E.A.J.M. Bente, Yok-Siang Oei, et al.. (2009). Passively Mode-Locked 4.6 and 10.5 GHz Quantum Dot Laser Diodes Around 1.55 μm With Large Operating Regime. IEEE Journal of Selected Topics in Quantum Electronics. 15(3). 634–643. 26 indexed citations
4.
Veldhoven, P. J. van, T. de Vries, E.J. Geluk, et al.. (2008). Butt joint integrated extended cavity InAs/InP (100) quantum dot laser emitting around 1.55 µm. Electronics Letters. 44(8). 522–524. 11 indexed citations
5.
Hill, M.T., S. Anantathanasarn, Yongqiu Zhu, et al.. (2008). InAs–InP (1.55-$\mu$m Region) Quantum-Dot Microring Lasers. IEEE Photonics Technology Letters. 20(6). 446–448. 13 indexed citations
6.
Anantathanasarn, S., P. J. van Veldhoven, T. J. Eijkemans, et al.. (2008). Polarization control of gain of stacked InAs∕InP (100) quantum dots at 1.55μm: Interplay between ground and excited state transitions. Applied Physics Letters. 92(12). 12 indexed citations
7.
Ulloa, J. M., S. Anantathanasarn, P. J. van Veldhoven, P. M. Koenraad, & R. Nötzel. (2008). Influence of an ultrathin GaAs interlayer on the structural properties of InAs∕InGaAsP∕InP (001) quantum dots investigated by cross-sectional scanning tunneling microscopy. Applied Physics Letters. 92(8). 12 indexed citations
8.
Heck, Martijn J. R., E.A.J.M. Bente, E. Smalbrugge, et al.. (2007). Observation of Q-switching and mode-locking in two-section InAs/InP (100) quantum dod lasers around 1.55 μm. TU/e Research Portal (Eindhoven University of Technology).
9.
Anantathanasarn, S., Y. Barbarin, P. J. van Veldhoven, et al.. (2007). Wavelength tunable InAs/InP(100) quantum dots in 1.55-μm telecom devices. Materials Science and Engineering B. 147(2-3). 124–130. 2 indexed citations
10.
Heck, Martijn J. R., E.A.J.M. Bente, Barry Smalbrugge, et al.. (2007). Observation of Q-switching and mode-locking in two-section InAs/InP (100) quantum dot lasers around 1.55 μm. Optics Express. 15(25). 16292–16292. 51 indexed citations
11.
Anantathanasarn, S., R. Nötzel, P. J. van Veldhoven, et al.. (2006). Stacking and polarization control of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots. Applied Physics Letters. 88(6). 36 indexed citations
12.
Nötzel, R., S. Anantathanasarn, P. J. van Veldhoven, et al.. (2006). Wavelength tuning of InAs∕InP quantum dots: Control of As∕P surface exchange reaction. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 24(4). 2075–2079. 1 indexed citations
13.
Anantathanasarn, S., et al.. (2006). 1.55-$\mu$m Range InAs–InP (100) Quantum-Dot Fabry–Pérot and Ring Lasers Using Narrow Deeply Etched Ridge Waveguides. IEEE Photonics Technology Letters. 18(24). 2644–2646. 17 indexed citations
14.
Nötzel, R., S. Anantathanasarn, René P. J. van Veldhoven, et al.. (2006). Self Assembled InAs/InP Quantum Dots for Telecom Applications in the 1.55 µm Wavelength Range: Wavelength Tuning, Stacking, Polarization Control, and Lasing. Japanese Journal of Applied Physics. 45(8S). 6544–6544. 53 indexed citations
15.
Zhou, Dayong, S. Anantathanasarn, P. J. van Veldhoven, et al.. (2006). Lateral wavelength control of InAs∕InGaAsP∕InP (100) quantum dots in the 1.55μm region by selective-area metal organic vapor-phase epitaxy. Journal of Applied Physics. 100(11). 3 indexed citations
16.
Anantathanasarn, S., R. Nötzel, P. J. van Veldhoven, et al.. (2006). Wavelength controlled InAs/InP quantum dots for telecom laser applications. Microelectronics Journal. 37(12). 1461–1467. 7 indexed citations
17.
Anantathanasarn, S., R. Nötzel, P. J. van Veldhoven, T. J. Eijkemans, & J. H. Wolter. (2005). Wavelength-tunable (1.55-μm region) InAs quantum dots in InGaAsP∕InP (100) grown by metal-organic vapor-phase epitaxy. Journal of Applied Physics. 98(1). 52 indexed citations
18.
Anantathanasarn, S., et al.. (2004). Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation. Applied Surface Science. 244(1-4). 71–74. 1 indexed citations
19.
Anantathanasarn, S. & Hideki Hasegawa. (2001). Surface passivation of GaAs using an ultrathin cubic GaN interface control layer. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 19(4). 1589–1596. 9 indexed citations
20.
Anantathanasarn, S., Shinya Ootomo, Tamotsu Hashizume, & Hideki Hasegawa. (2000). Surface passivation of GaAs by ultra-thin cubic GaN layer. Applied Surface Science. 159-160. 456–461. 37 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by D.G. Hayes Breakdown of academic impact, for papers by Osamu Moriwaki Breakdown of academic impact, for papers by V. P. Evtikhiev Breakdown of academic impact, for papers by M. Mannoh Breakdown of academic impact, for papers by M. Dumitrescu Breakdown of academic impact, for papers by O. Drisse Breakdown of academic impact, for papers by H. Jung Breakdown of academic impact, for papers by G. Karczewski Breakdown of academic impact, for papers by B. D. McCombe Breakdown of academic impact, for papers by J. Nürnberger
Rankless by CCL
2026