D. T. McInturff

1.3k citations

42 papers · 1.0k indexed · h-index 16

Impact in

Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
- Quantum and electron transport phenomena
Condensed Matter Physics top 5%
- Physics of Superconductivity and Magnetism
- GaN-based semiconductor devices and materials

Papers in

Atomic and Molecular Physics, and Optics 36
- Semiconductor Quantum Structures and Devices 31
- Semiconductor materials and interfaces 10
Surfaces, Coatings and Films 6
- Electron and X-Ray Spectroscopy Techniques 6

Co-authors: J. M. Woodall A.C. Warren M. R. Melloch J. L. Freeouf D. Grischkowsky N. Ōtsuka G. D. Pettit Stephen E. Ralph
Journals: Applied Physics Letters (18 papers)IEEE Electron Device Letters (2 papers)Journal of Applied Physics (2 papers)Japanese Journal of Applied Physics (1 paper)Applied Surface Science (1 paper)
Partner nations: United States Hong Kong

In The Last Decade

D. T. McInturff

42 papers receiving 997 citations

Peers

Countries citing papers authored by D. T. McInturff

Since Specialization

Citations

This map shows the geographic impact of D. T. McInturff's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. T. McInturff with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. T. McInturff more than expected).

Fields of papers citing papers by D. T. McInturff

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. T. McInturff. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. T. McInturff. The network helps show where D. T. McInturff may publish in the future.

Co-authors

The 25 scholars most cited alongside D. T. McInturff, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. T. McInturff Line = papers co-authored together D. T. McInturff links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	An ohmic nanocontact to GaAs Applied Physics Letters ·Takhee Lee, Jia Liu, David B. Janes, V. Kolagunta, J. Dicke, R. P. Andres, Jochen Lauterbach, M. R. Melloch, D. T. McInturff, J. M. Woodall, R. Reifenberger	1999	19
2	Is the ‘Finite Bias Anomaly’ in planar GaAs-superconductor junctions caused by point-contact-like structures? Superlattices and Microstructures ·Santanu Chaudhuri, Philip F. Bagwell, D. T. McInturff, J. C. P. Chang, S.S. Paak, M. R. Melloch, J. M. Woodall, T. M. Pekarek, B. C. Crooker	1999	1
3	Scanning tunneling microscopy and spectroscopy of arsenic antisites in low temperature grown InGaAs Applied Physics Letters ·B. Grandidier, Huajie Chen, R. M. Feenstra, D. T. McInturff, P Juodawlkis, Stephen E. Ralph	1999	56
4	Reflection anisotropy spectroscopy study of the near surface electric field in low-temperature grown GaAs (001) Applied Physics Letters ·Todd Holden, Fred H. Pollak, J. L. Freeouf, D. T. McInturff, J.L. Gray, Mark Lundstrom, J. M. Woodall	1997	15
5	Subpicosecond nonlinear absorption recovery dynamics of low-temperature-grown In0.53Ga0.47As/In0.52Al0.48As multiple quantum well p-i-n structures P Juodawlkis, Zhiping Zhou, C. M. Verber, D. T. McInturff, M.C. Hargis, Stephen E. Ralph	1997	1
6	Annealing stability and device application of nonalloyed ohmic contacts using a low temperature grown GaAs cap on thin n+ GaAs layers Applied Physics Letters ·H. J. Ueng, V. Kolagunta, David B. Janes, Kevin J. Webb, D. T. McInturff, M. R. Melloch	1997	9
7	Low-temperature grown GaAs tunnel junctions Electronics Letters ·Shaikh Ahmed, M. R. Melloch, D. T. McInturff, J. M. Woodall, E. S. Harmon	1997	3
8	The compensation and depletion behavior of iron doped GaAs grown by molecular beam epitaxy Applied Physics Letters ·D. T. McInturff, E. S. Harmon, J. C. P. Chang, T. M. Pekarek, J. M. Woodall	1996	8
9	Chemically Stable Semiconductor Surface Layers Using Low-Temperature Grown GaAs MRS Proceedings ·David B. Janes, Seokmoo Hong, V. Kolagunta, D. T. McInturff, T.B. Ng, R. Reifenberger, Sheldon D. West, J. M. Woodall	1996	2
10	Ultrafast carrier dynamics and optical nonlinearities of low-temperature-grown InGaAs/InAlAs multiple quantum wells Applied Physics Letters ·P Juodawlkis, D. T. McInturff, Stephen E. Ralph	1996	47
11	Novel GaAs photodetector with gain for long wavelength detection Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·E. S. Harmon, D. T. McInturff, M. R. Melloch, J. M. Woodall	1995	3
12	The continuing drama of the semiconductor interface Philosophical Transactions of the Royal Society of London Series A Physical and Engineering Sciences ·J. M. Woodall, P. D. Kirchner, J. L. Freeouf, M. R. Melloch, Fred H. Pollak, D. T. McInturff	1993	9
13	Temperature-dependent composition, ordering, and band bending at GaP(100) surfaces Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·I. M. Vitomirov, A. Raisanen, L. J. Brillson, Chiung-Yuan Lin, D. T. McInturff, P. D. Kirchner, J. M. Woodall	1993	10
14	Physics and Applications of Metallic Arsenic Clusters in GaAs Based Layer Structures Japanese Journal of Applied Physics ·M. R. Melloch, N. Ōtsuka, E. S. Harmon, David D. Nolte, J. M. Woodall, D. T. McInturff	1993	1
15	Minority carrier lifetime and photoluminescent response of heavily carbon-doped GaAs grown with gas source molecular-beam epitaxy using halomethane doping sources Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·T. J. de Lyon, J. M. Woodall, J. A. Kash, D. T. McInturff, Richard Bates, P. D. Kirchner, F. Cardone	1992	2
16	1.3- mu m P-i-N photodetector using GaAs with As precipitates (GaAs:As) IEEE Electron Device Letters ·A.C. Warren, J. H. Burroughes, J. M. Woodall, D. T. McInturff, R. T. Hodgson, M. R. Melloch	1991	59
17	Carbon doping of GaP, GaInP, and AlInP in metalorganic molecular beam epitaxy using methyl and ethyl precursors Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·T. J. de Lyon, J. M. Woodall, P. D. Kirchner, D. T. McInturff, G. Scilla, F. Cardone	1991	29
18	Superconducting InGaAs junction field-effect transistors with Nb electrodes Applied Physics Letters ·A. W. Kleinsasser, Thomas N. Jackson, D. T. McInturff, F. Rammo, G. D. Pettit, J. M. Woodall	1989	53
19	Characterization of photochemically unpinned GaAs Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·C. W. Wilmsen, P. D. Kirchner, John M. Baker, D. T. McInturff, G. D. Pettit, J. M. Woodall	1988	40
20	Masked, anisotropic thermal etching and regrowth for i n s i t u patterning of compound semiconductors Applied Physics Letters ·A.C. Warren, J. M. Woodall, E. R. Fossum, G. D. Pettit, P. D. Kirchner, D. T. McInturff	1987	6

About D. T. McInturff

D. T. McInturff is a scholar working on Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials, having authored 42 papers that have together received 1.0k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (31 papers), Semiconductor materials and devices (13 papers), Semiconductor materials and interfaces (10 papers), Advanced Semiconductor Detectors and Materials (7 papers), Electron and X-Ray Spectroscopy Techniques (6 papers), GaN-based semiconductor devices and materials (6 papers), Photonic and Optical Devices (6 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (842 citations), Condensed Matter Physics (207 citations), Electrical and Electronic Engineering (772 citations), Structural Biology (7 citations) and Surfaces, Coatings and Films (33 citations). D. T. McInturff has collaborated with scholars based in United States and Hong Kong. Frequent co-authors include J. M. Woodall, A.C. Warren, M. R. Melloch, J. L. Freeouf, D. Grischkowsky, N. Ōtsuka, G. D. Pettit, J. M. Woodall, Stephen E. Ralph and P. D. Kirchner. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, Journal of Applied Physics, Japanese Journal of Applied Physics and Applied Surface Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact