A.C. Warren

2.5k total citations
46 papers, 2.0k citations indexed

About

A.C. Warren is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, A.C. Warren has authored 46 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 29 papers in Atomic and Molecular Physics, and Optics and 13 papers in Biomedical Engineering. Recurrent topics in A.C. Warren's work include Semiconductor Quantum Structures and Devices (17 papers), Semiconductor materials and devices (16 papers) and Semiconductor materials and interfaces (13 papers). A.C. Warren is often cited by papers focused on Semiconductor Quantum Structures and Devices (17 papers), Semiconductor materials and devices (16 papers) and Semiconductor materials and interfaces (13 papers). A.C. Warren collaborates with scholars based in United States and United Kingdom. A.C. Warren's co-authors include J. M. Woodall, N. Ōtsuka, M. R. Melloch, J. L. Freeouf, D. Grischkowsky, D. T. McInturff, P. D. Kirchner, D.A. Antoniadis, K. Mahalingam and Henry I. Smith and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

A.C. Warren

44 papers receiving 1.9k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
A.C. Warren United States	24	1.5k	1.4k	582	253	208	46	2.0k
C. M. Wolfe United States	25	1.5k 1.0×	1.7k 1.2×	448 0.8×	264 1.0×	202 1.0×	64	2.1k
D.I. Westwood United Kingdom	22	1.0k 0.7×	1.2k 0.9×	373 0.6×	220 0.9×	151 0.7×	114	1.5k
J. Lopata United States	26	1.9k 1.3×	1.3k 0.9×	454 0.8×	151 0.6×	219 1.1×	112	2.2k
G. E. Stillman United States	26	1.7k 1.1×	1.5k 1.1×	237 0.4×	201 0.8×	183 0.9×	79	2.1k
D. L. Rode United States	20	1.2k 0.8×	1.2k 0.9×	636 1.1×	296 1.2×	193 0.9×	62	1.8k
Kunishige Oe Japan	32	2.8k 1.8×	2.5k 1.8×	722 1.2×	501 2.0×	378 1.8×	165	3.5k
J. D. Benson United States	21	1.4k 0.9×	614 0.4×	407 0.7×	106 0.4×	188 0.9×	119	1.6k
C. E. Stutz United States	26	1.6k 1.1×	1.8k 1.3×	808 1.4×	650 2.6×	217 1.0×	130	2.5k
M. Geva United States	19	1.0k 0.7×	883 0.6×	239 0.4×	171 0.7×	186 0.9×	90	1.3k
S. R. Johnson United States	25	1.9k 1.3×	1.7k 1.2×	793 1.4×	216 0.9×	302 1.5×	139	2.5k

Countries citing papers authored by A.C. Warren

Since Specialization

Citations

This map shows the geographic impact of A.C. Warren's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A.C. Warren with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A.C. Warren more than expected).

Fields of papers citing papers by A.C. Warren

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A.C. Warren. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A.C. Warren. The network helps show where A.C. Warren may publish in the future.

Co-authorship network of co-authors of A.C. Warren

This figure shows the co-authorship network connecting the top 25 collaborators of A.C. Warren. A scholar is included among the top collaborators of A.C. Warren based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A.C. Warren. A.C. Warren is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Kiehl, R.A., Mark A. Olson, Kanji Yoh, et al.. (2003). Complementary p- and n-channel quantum-well MI/sup 3/SFETs. 7. 684–687.

Warren, A.C., J. M. Woodall, P. D. Kirchner, et al.. (1992). Electromodulation study of GaAs with excess arsenic. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(4). 1904–1907. 23 indexed citations

Melloch, M. R., N. Ōtsuka, K. Mahalingam, et al.. (1992). Arsenic cluster dynamics in doped GaAs. Journal of Applied Physics. 72(8). 3509–3513. 42 indexed citations

Warren, A.C., J. M. Woodall, P. D. Kirchner, et al.. (1992). Role of excess As in low-temperature-grown GaAs. Physical review. B, Condensed matter. 46(8). 4617–4620. 58 indexed citations

Melloch, M. R., N. Ōtsuka, K. Mahalingam, et al.. (1992). Formation of two-dimensional arsenic-precipitate arrays in GaAs. Applied Physics Letters. 61(2). 177–179. 47 indexed citations

Iyer, Subramanian S., P. M. Solomon, V. P. Kesan, et al.. (1991). A gate-quality dielectric system for SiGe metal-oxide-semiconductor devices. IEEE Electron Device Letters. 12(5). 246–248. 75 indexed citations

Warren, A.C., J. H. Burroughes, J. M. Woodall, et al.. (1991). 1.3- mu m P-i-N photodetector using GaAs with As precipitates (GaAs:As). IEEE Electron Device Letters. 12(10). 527–529. 59 indexed citations

Melloch, M. R., N. Ōtsuka, J. M. Woodall, A.C. Warren, & J. L. Freeouf. (1990). Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures. Applied Physics Letters. 57(15). 1531–1533. 194 indexed citations

Kiehl, R.A., Mark A. Olson, Kanji Yoh, et al.. (1988). Complementary p and n-Channel Quantum-Well MI3SF'ET's. 684–687. 2 indexed citations

10.

Warren, A.C., et al.. (1987). Masked, anisotropic thermal etching and regrowth for i n s i t u patterning of compound semiconductors. Applied Physics Letters. 51(22). 1818–1820. 6 indexed citations

11.

Warren, A.C., S. D. Offsey, J. M. Woodall, et al.. (1986). Summary Abstract: Unpinned (100) GaAs surfaces in air using photochemistry. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 4(4). 1115–1116. 1 indexed citations

12.

Offsey, S. D., J. M. Woodall, A.C. Warren, et al.. (1986). Unpinned (100) GaAs surfaces in air using photochemistry. Applied Physics Letters. 48(7). 475–477. 171 indexed citations

13.

Laux, S.E. & A.C. Warren. (1986). Self-consistent calculation of electron states in narrow channels. 567–570. 4 indexed citations

14.

Warren, A.C.. (1985). Surface Superlattices and Quasi - One-Dimensional Conduction in Silicon Inversion Layers.. 2 indexed citations

15.

Warren, A.C., et al.. (1985). Surface superlattice formation in silicon inversion layers using 0.2-µm period grating-gate electrodes. IEEE Electron Device Letters. 6(6). 294–296. 59 indexed citations

16.

Dąbrowski, A., Jan S. Iwanczyk, G. Ricker, et al.. (1981). Performance Of Room-Temperature X-Ray Detectors Made From Mercuric Iodide (HgI₂) Platelets. Advances in X-ray Analysis. 25. 31–37. 8 indexed citations

17.

Warren, A.C.. (1973). Reversible thermal breakdown as a switching mechanism in chalcogenide glasses. IEEE Transactions on Electron Devices. 20(2). 123–131. 57 indexed citations

18.

Meadowcroft, D. B., P. Meier, & A.C. Warren. (1972). Hot ceramic electrodes for open-cycle MHD power generation. Energy Conversion. 12(4). 145–147. 29 indexed citations

19.

Warren, A.C.. (1969). On state of chalcogenide glass switches. Electronics Letters. 5(24). 609–609. 13 indexed citations

20.

Borcherds, P H, C.E. Gough, W. F. Vinen, & A.C. Warren. (1964). The Motion of Abrikosov vortices in a type II superconductor. Philosophical magazine. 10(104). 349–354. 29 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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