T. J. de Lyon

1.4k total citations
53 papers, 1.0k citations indexed

About

T. J. de Lyon is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, T. J. de Lyon has authored 53 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 50 papers in Electrical and Electronic Engineering, 35 papers in Atomic and Molecular Physics, and Optics and 8 papers in Materials Chemistry. Recurrent topics in T. J. de Lyon's work include Advanced Semiconductor Detectors and Materials (36 papers), Semiconductor Quantum Structures and Devices (32 papers) and Chalcogenide Semiconductor Thin Films (27 papers). T. J. de Lyon is often cited by papers focused on Advanced Semiconductor Detectors and Materials (36 papers), Semiconductor Quantum Structures and Devices (32 papers) and Chalcogenide Semiconductor Thin Films (27 papers). T. J. de Lyon collaborates with scholars based in United States and United Kingdom. T. J. de Lyon's co-authors include J. M. Woodall, P. D. Kirchner, S. M. Johnson, C. A. Cockrum, J.A. Hutchby, J. Eric Jensen, P.M. Enquist, Mark S. Goorsky, G. M. Venzor and O. K. Wu and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

T. J. de Lyon

52 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
T. J. de Lyon United States	19	937	738	215	99	88	53	1.0k
E. R. Gertner United States	21	920 1.0×	697 0.9×	272 1.3×	52 0.5×	79 0.9×	52	1.0k
B. Z. Nosho United States	16	585 0.6×	521 0.7×	247 1.1×	47 0.5×	75 0.9×	46	771
Stephen W. Kennerly United States	16	913 1.0×	880 1.2×	322 1.5×	41 0.4×	79 0.9×	34	1.1k
W. V. McLevige United States	18	852 0.9×	508 0.7×	92 0.4×	28 0.3×	156 1.8×	51	924
Martin Walther Germany	17	723 0.8×	508 0.7×	92 0.4×	43 0.4×	163 1.9×	58	819
Grace D. Metcalfe United States	14	677 0.7×	485 0.7×	171 0.8×	130 1.3×	220 2.5×	37	975
Elizabeth H. Steenbergen United States	17	1.0k 1.1×	784 1.1×	189 0.9×	18 0.2×	117 1.3×	53	1.1k
A.G. Foyt United States	18	737 0.8×	502 0.7×	185 0.9×	47 0.5×	26 0.3×	31	861
C. Besikci Türkiye	17	559 0.6×	441 0.6×	89 0.4×	48 0.5×	64 0.7×	44	640
D. T. Cheung United States	14	660 0.7×	447 0.6×	163 0.8×	13 0.1×	66 0.8×	42	724

Countries citing papers authored by T. J. de Lyon

Since Specialization

Citations

This map shows the geographic impact of T. J. de Lyon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. J. de Lyon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. J. de Lyon more than expected).

Fields of papers citing papers by T. J. de Lyon

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. J. de Lyon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. J. de Lyon. The network helps show where T. J. de Lyon may publish in the future.

Co-authorship network of co-authors of T. J. de Lyon

This figure shows the co-authorship network connecting the top 25 collaborators of T. J. de Lyon. A scholar is included among the top collaborators of T. J. de Lyon based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. J. de Lyon. T. J. de Lyon is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Jenkins, James R., et al.. (2017). Fabrication of small pitch, high definition (HD) 1kx2k/5μm MWIR focal-plane-arrays operating at high temperature (HOT). Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 10177. 101771J–101771J. 6 indexed citations

D'Souza, Arvind I., T. J. de Lyon, R. Rajavel, et al.. (2012). MWIR InAs<sub>1-x</sub>Sb<sub>x</sub> nCBn detectors data and analysis. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8353. 835333–835333. 7 indexed citations

D'Souza, Arvind I., T. J. de Lyon, Hasan Sharifi, et al.. (2012). Electrooptical Characterization of MWIR InAsSb Detectors. Journal of Electronic Materials. 41(10). 2671–2678. 30 indexed citations

D'Souza, Arvind I., T. J. de Lyon, R. Rajavel, et al.. (2011). InAsSb detectors for visible to MWIR high-operating temperature applications. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8012. 80122S–80122S. 5 indexed citations

Smith, E. P. G., E. A. Patten, Jeffrey M. Peterson, et al.. (2006). Status of two-color and large format HgCdTe FPA technology at Raytheon Vision Systems. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 15 indexed citations

Johnson, S. M., W. A. Radford, M. F. Vilela, et al.. (2005). Status of HgCdTe/Si technology for large format infrared focal plane arrays. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7 indexed citations

Varesi, J. B., W. A. Radford, K. D. Maranowski, et al.. (2001). Fabrication of high-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4″ silicon substrates. Journal of Electronic Materials. 30(6). 566–573. 44 indexed citations

Lyon, T. J. de, G. R. Chapman, A. T. Hunter, et al.. (1999). Epitaxial growth of HgCdTe 1.55-μm avalanche photodiodes by molecular beam epitaxy. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3629. 256–256. 11 indexed citations

Lyon, T. J. de, R. Rajavel, J. Eric Jensen, et al.. (1996). <title>MBE growth of HgCdTe IR detector structures on Si substrates: recent advances and future prospects</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2816. 29–41. 4 indexed citations

10.

Rajavel, R., et al.. (1996). Molecular beam epitaxial growth and properties of short-wave infrared Hg0.3Cd0.7Te films. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(3). 2362–2365. 5 indexed citations

11.

Lyon, T. J. de, R. Rajavel, J. Eric Jensen, et al.. (1996). Heteroepitaxy of HgCdTe(112) infrared detector structures on Si(112) substrates by molecular-beam epitaxy. Journal of Electronic Materials. 25(8). 1341–1346. 29 indexed citations

12.

Johnson, S. M., T. J. de Lyon, C. A. Cockrum, et al.. (1995). Direct growth of CdZnTe/Si substrates for large-area HgCdTe infrared focal plane arrays. Journal of Electronic Materials. 24(5). 467–473. 33 indexed citations

13.

Lyon, T. J. de, R. Rajavel, O. K. Wu, et al.. (1995). <title>Direct MBE growth of HgCdTe(112) IR detector structures on Si(112) substrates</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2554. 25–34.

14.

Lyon, T. J. de, S. M. Johnson, C. A. Cockrum, W. J. Hamilton, & O. K. Wu. (1993). <title>Direct MBE growth of CdZnTe on Si(100) and Si(112) substrates for large-area HgCdTe IRFPAs</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2021. 114–124. 9 indexed citations

15.

Lovejoy, M. L., M. R. Melloch, Mark Lundstrom, et al.. (1992). Comparative study of minority electron properties in p+-GaAs doped with beryllium and carbon. Applied Physics Letters. 61(7). 822–824. 6 indexed citations

16.

Lyon, T. J. de, J. A. Kash, D. T. McInturff, et al.. (1992). Minority carrier lifetime and photoluminescent response of heavily carbon-doped GaAs grown with gas source molecular-beam epitaxy using halomethane doping sources. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(2). 846–849. 2 indexed citations

17.

Lyon, T. J. de, N.I. Buchan, P. D. Kirchner, et al.. (1991). Use of CCl4 and CHCl3 in gas source molecular beam epitaxy for carbon doping of GaAs and GaxIn1−xP. Journal of Crystal Growth. 111(1-4). 564–569. 34 indexed citations

18.

Lyon, T. J. de, J. A. Kash, S. Tiwari, et al.. (1990). Low surface recombination velocity and contact resistance using p+/p carbon-doped GaAs structures. Applied Physics Letters. 56(24). 2442–2444. 10 indexed citations

19.

Lyon, T. J. de, J. M. Woodall, Mark S. Goorsky, & P. D. Kirchner. (1990). Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxy. Applied Physics Letters. 56(11). 1040–1042. 115 indexed citations

20.

Lyon, T. J. de, H. C. Casey, P.M. Enquist, J.A. Hutchby, & A. J. SpringThorpe. (1989). Surface recombination current and emitter compositional grading in N p n and P n p GaAs/AlxGa1−xAs heterojunction bipolar transistors. Applied Physics Letters. 54(7). 641–643. 18 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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