R. T. Hodgson

2.3k citations

53 papers · 1.7k indexed · h-index 20

Atomic and Molecular Physics, and Optics top 5%
Computational Mechanics top 2%
- Ion-surface interactions and analysis 9
- Laser Material Processing Techniques 8
Electrical and Electronic Engineering top 5%
- Silicon and Solar Cell Technologies 13
- Laser Design and Applications 10
- Integrated Circuits and Semiconductor Failure Analysis 7
Materials Chemistry top 10%
- Silicon Nanostructures and Photoluminescence 7
Ceramics and Composites top 10%
Spectroscopy
- Spectroscopy and Laser Applications 7
Mechanics of Materials
- Laser-induced spectroscopy and plasma 7

Co-authors: J. M. Woodall J. J. Wynne P. P. Sorokin R. Yen N. Bloembergen J. E. E. Baglin R. W. Dreyfus H.J. Hovel
Cited by: Atomic and Molecular Physics, and Optics Computational Mechanics Electrical and Electronic Engineering
Journals: Physical Review Letters (3 papers)The Journal of Chemical Physics (1 paper)Applied Physics Letters (20 papers)
Partner nations: United States Germany Canada

In The Last Decade

R. T. Hodgson

52 papers receiving 1.6k citations

Peers

Countries citing papers authored by R. T. Hodgson

Since Specialization

Citations

This map shows the geographic impact of R. T. Hodgson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. T. Hodgson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. T. Hodgson more than expected).

Fields of papers citing papers by R. T. Hodgson

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. T. Hodgson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. T. Hodgson. The network helps show where R. T. Hodgson may publish in the future.

Co-authorship network

The 25 scholars most cited alongside R. T. Hodgson, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with R. T. Hodgson Line = papers co-authored together R. T. Hodgson links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Magnetically filtered low-loss scanning electron microscopy Applied Physics Letters ·Oliver C. Wells,F. K. LeGoues,R. T. Hodgson	1990	6
2	A Simple Model for the Transient, Enhanced Diffusion of Ion-Implanted Phosphorus in Silicon MRS Proceedings ·F. F. Morehead,R. T. Hodgson	1984	15
3	I n s i t u laser heating in a scanning transmission electron microscope Applied Physics Letters ·R. T. Hodgson,G. S. Boebinger,P. E. Batson	1983	2
4	Test for nonthermal transient annealing in silicon Applied Physics Letters ·J. E. E. Baglin,R. T. Hodgson,J. M. Neri,R. Fastow	1983	6
5	Pulsed ion beam irradiation of silicon Nuclear Instruments and Methods in Physics Research ·Wei-Kan Chu,Sebastian Mäder,E. F. Gorey,J. E. E. Baglin,R. T. Hodgson,J. M. Neri,D. A. Hammer	1982	18
6	Lack of importance of ambient gases on picosecond laser-induced phase transitions of silicon Applied Physics Letters ·J. M. Liu,R. Yen,E. P. Donovan,N. Bloembergen,R. T. Hodgson	1981	19
7	Pulsed proton beam annealing: Semiconductors and silicides Nuclear Instruments and Methods in Physics Research ·J. E. E. Baglin,R. T. Hodgson,W. K. Chu,J. M. Neri,D. A. Hammer,L.J. Chen	1981	27
8	Time dependence of the reflectivity of Si at 633 and 488 nm during pulsed laser annealing Applied Physics Letters ·Marshall I. Nathan,R. T. Hodgson,Ellen J. Yoffa	1980	23
9	Ion beam annealing of semiconductors Applied Physics Letters ·R. T. Hodgson,J. E. E. Baglin,Rikathi Pal,J. M. Neri,D. A. Hammer	1980	79
10	Effect of fluorescent wavelength shifting on solar cell spectral response (A) Journal of the Optical Society of America A ·J. M. Woodall,H.J. Hovel,R. T. Hodgson	1979	137
11	Order-Disorder Transition in Single-Crystal Silicon Induced by Pulsed uv Laser Irradiation Physical Review Letters ·Raphael Tsu,R. T. Hodgson,Teh Y. Tan,J. E. E. Baglin	1979	100
12	Permanent local modification of the magnetic bubble properties of epitaxial garnet films by laser annealing Journal of Applied Physics ·L. Schultz,E. A. Giess,R. T. Hodgson,T. O. Sedgwick	1979	24
13	Laser recrystallization of ion-implanted Si by frequency-doubled Nd:YAG laser AIP conference proceedings ·Raphael Tsu,J. E. E. Baglin,T. Y. Tan,M. Y. Tsai,K. C. Park,R. T. Hodgson	1979	1
14	RESONANTLY ENHANCED, NONLINEAR GENERATION OF TUNABLE, COHERENT, VACUUM ULTRAVIOLET (VUV) LIGHT IN ATOMIC VAPORS* Annals of the New York Academy of Sciences ·P. P. Sorokin,J. J. Wynne,John A. Armstrong,R. T. Hodgson	1976	25
15	Tunable Coherent Vacuum-Ultraviolet Generation in Atomic Vapors Physical Review Letters ·R. T. Hodgson,P. P. Sorokin,J. J. Wynne	1974	190
16	Molecular-hydrogen laser: 1098-1613 °A Physical review. A, General physics ·R. W. Dreyfus,R. T. Hodgson	1974	22
17	Relativistic Electron-Beam Pumped uv Gas Lasers Journal of Vacuum Science and Technology ·R. W. Dreyfus,R. T. Hodgson	1973	9
18	Electron-Beam Excitation of the Nitrogen Laser Applied Physics Letters ·R. W. Dreyfus,R. T. Hodgson	1972	31
19	Formation of excited charge-transfer complexes in the quenching of anthracene fluorescence by anions Journal of the Chemical Society D Chemical Communications ·Randall D. Beer,K. M. C. Davis,R. T. Hodgson	1970	7
20	Excitation ofm= 0 instabilities in aZ-pinch discharge Journal of Nuclear Energy Part C Plasma Physics Accelerators Thermonuclear Research ·F. L. Curzon,R. T. Hodgson,R. J. Churchill	1964	2

About R. T. Hodgson

R. T. Hodgson is a scholar working on Structural Biology, Computational Mechanics and Electrical and Electronic Engineering, having authored 53 papers that have together received 1.7k indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (13 papers), Laser Design and Applications (10 papers), Ion-surface interactions and analysis (9 papers), Laser Material Processing Techniques (8 papers), Spectroscopy and Laser Applications (7 papers), Integrated Circuits and Semiconductor Failure Analysis (7 papers), Laser-induced spectroscopy and plasma (7 papers) and Silicon Nanostructures and Photoluminescence (7 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (654 citations), Computational Mechanics (421 citations) and Electrical and Electronic Engineering (1.0k citations). R. T. Hodgson has collaborated with scholars based in United States, Germany and Canada. Frequent co-authors include J. M. Woodall, J. J. Wynne, P. P. Sorokin, R. Yen, N. Bloembergen, J. E. E. Baglin, R. W. Dreyfus, H.J. Hovel, William R. Cook and C. F. Dewey. Their work appears in journals such as Physical Review Letters, The Journal of Chemical Physics and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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