L. J. Brillson

1.2k total citations
45 papers, 965 citations indexed

About

L. J. Brillson is a scholar working on Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films and Electrical and Electronic Engineering. According to data from OpenAlex, L. J. Brillson has authored 45 papers receiving a total of 965 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Atomic and Molecular Physics, and Optics, 23 papers in Surfaces, Coatings and Films and 22 papers in Electrical and Electronic Engineering. Recurrent topics in L. J. Brillson's work include Semiconductor materials and interfaces (26 papers), Surface and Thin Film Phenomena (24 papers) and Electron and X-Ray Spectroscopy Techniques (23 papers). L. J. Brillson is often cited by papers focused on Semiconductor materials and interfaces (26 papers), Surface and Thin Film Phenomena (24 papers) and Electron and X-Ray Spectroscopy Techniques (23 papers). L. J. Brillson collaborates with scholars based in United States, Germany and France. L. J. Brillson's co-authors include G. Margaritondo, R. E. Viturro, C. F. Brucker, N. G. Stoffel, G. D. Pettit, J. M. Woodall, P. D. Kirchner, R. S. Bauer, R. Z. Bachrach and I. M. Vitomirov and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

L. J. Brillson

45 papers receiving 919 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L. J. Brillson United States 22 661 586 315 251 128 45 965
I. M. Vitomirov United States 18 680 1.0× 411 0.7× 384 1.2× 216 0.9× 129 1.0× 51 935
S. P. Kowalczyk United States 13 602 0.9× 555 0.9× 167 0.5× 302 1.2× 66 0.5× 21 860
P. H. Mahowald United States 12 489 0.7× 558 1.0× 208 0.7× 166 0.7× 78 0.6× 26 737
J.M.C. Thornton United Kingdom 13 627 0.9× 333 0.6× 179 0.6× 233 0.9× 100 0.8× 29 827
Fredrik Owman Sweden 14 379 0.6× 767 1.3× 131 0.4× 479 1.9× 83 0.6× 15 1.1k
S. Mróz Poland 15 470 0.7× 207 0.4× 477 1.5× 185 0.7× 91 0.7× 67 713
Jia-Fa Fan Japan 8 536 0.8× 607 1.0× 118 0.4× 215 0.9× 93 0.7× 13 752
S. Iacobucci Italy 15 418 0.6× 244 0.4× 236 0.7× 354 1.4× 65 0.5× 46 787
Maarten Bischoff Netherlands 17 510 0.8× 279 0.5× 142 0.5× 395 1.6× 120 0.9× 49 905
T. Hashizume Japan 15 428 0.6× 200 0.3× 105 0.3× 308 1.2× 120 0.9× 36 677

Countries citing papers authored by L. J. Brillson

Since Specialization
Citations

This map shows the geographic impact of L. J. Brillson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. J. Brillson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. J. Brillson more than expected).

Fields of papers citing papers by L. J. Brillson

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. J. Brillson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. J. Brillson. The network helps show where L. J. Brillson may publish in the future.

Co-authorship network of co-authors of L. J. Brillson

This figure shows the co-authorship network connecting the top 25 collaborators of L. J. Brillson. A scholar is included among the top collaborators of L. J. Brillson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. J. Brillson. L. J. Brillson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Brillson, L. J.. (2007). Interface bonding, chemical reactions, and defect formation at metal-semiconductor interfaces. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 25(4). 943–949. 23 indexed citations
2.
Miller, Eric J, D. M. Schaadt, Edward T. Yu, et al.. (2003). Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy. Journal of Applied Physics. 94(12). 7611–7615. 33 indexed citations
3.
Ng, W., Avijit K. Ray-Chaudhuri, Simrjit Singh, et al.. (1994). Study of surfaces and interfaces by scanning photoemission microscopy. Synchrotron Radiation News. 7(2). 25–29. 10 indexed citations
4.
Vitomirov, I. M., A. Raisanen, L. J. Brillson, et al.. (1993). Temperature-dependent composition, ordering, and band bending at GaP(100) surfaces. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 11(4). 841–847. 10 indexed citations
5.
Vitomirov, I. M., A. Raisanen, L. J. Brillson, et al.. (1993). Processing and reconstruction effects on Al-GaAs(100) barrier heights. Journal of Electronic Materials. 22(3). 309–313. 2 indexed citations
6.
Brillson, L. J., I. M. Vitomirov, A. Raisanen, et al.. (1993). Electronic structure of metal/semiconductor interfaces from cathodoluminescence and soft X-ray photoemission spectroscopies. Applied Surface Science. 65-66. 667–675. 7 indexed citations
7.
Vitomirov, I. M., A. Raisanen, Adam C. Finnefrock, et al.. (1992). Geometric ordering, surface chemistry, band bending, and work function at decapped GaAs(100) surfaces. Physical review. B, Condensed matter. 46(20). 13293–13302. 60 indexed citations
8.
Raisanen, A., L. J. Brillson, J. L. Shaw, et al.. (1992). Inhomogeneous and wide range of barrier heights at metal/molecular-beam epitaxy GaAs(100) interfaces observed with electrical measurements. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(4). 1932–1939. 14 indexed citations
9.
Vitomirov, I. M., A. Raisanen, Adam C. Finnefrock, et al.. (1992). Surface and interface states for GaAs(100) (1×1) and (4×2)-c(8×2) reconstructions. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 10(4). 749–753. 9 indexed citations
10.
Shu, C., I. M. Vitomirov, L. J. Brillson, et al.. (1991). Correlation of interface chemistry, barrier height, and step density for Al on vicinal GaAs(100) surfaces. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 9(3). 902–906. 3 indexed citations
11.
Brillson, L. J., et al.. (1990). Interface states at metal-compound semiconductor junctions. Vacuum. 41(4-6). 1016–1020. 5 indexed citations
12.
Chiaradia, P., et al.. (1989). Schottky-like behavior of the GaP(110)/Ag interface. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 7(2). 195–198. 9 indexed citations
13.
Viturro, R. E., C. Mailhiot, J. L. Shaw, et al.. (1989). Interface states and Schottky barrier formation at metal/GaAs junctions. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 7(3). 855–860. 26 indexed citations
14.
Cerrina, F., Barry Lai, A. K. Raychaudhuri, et al.. (1989). MAXIMUM: Status of the scanning photoelectron microscope (abstract). Review of Scientific Instruments. 60(7). 2249–2249. 8 indexed citations
15.
Viturro, R. E., J. L. Shaw, & L. J. Brillson. (1987). Cleavage-related electronic states of Al–InP(110) interfaces. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 5(4). 1125–1128. 2 indexed citations
16.
Brillson, L. J.. (1986). Promoting and characterizing new chemical structure at metal-semiconductor interfaces. Surface Science. 168(1-3). 260–274. 6 indexed citations
17.
Brillson, L. J., R. S. Bauer, R. Z. Bachrach, & J. C. McMenamin. (1980). Bonding and diffusion at Al and Au interfaces with CdS. Journal of Vacuum Science and Technology. 17(1). 476–480. 25 indexed citations
18.
Brillson, L. J., G. Margaritondo, & N. G. Stoffel. (1980). Atomic Modulation of Interdiffusion at Au-GaAs Interfaces. Physical Review Letters. 44(10). 667–670. 46 indexed citations
19.
Margaritondo, G., L. J. Brillson, & N. G. Stoffel. (1980). Secondary illumination effects in the photoemission spectra of GaAs and CdS. Solid State Communications. 35(3). 277–280. 28 indexed citations
20.
Brillson, L. J., et al.. (1980). Measurement and modulation of atomic interdiffusion at Au–Al/GaAs(110) interfaces. Journal of Vacuum Science and Technology. 17(5). 880–885. 28 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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