J. C. P. Chang

666 total citations
28 papers, 512 citations indexed

About

J. C. P. Chang is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, J. C. P. Chang has authored 28 papers receiving a total of 512 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Atomic and Molecular Physics, and Optics, 22 papers in Electrical and Electronic Engineering and 7 papers in Materials Chemistry. Recurrent topics in J. C. P. Chang's work include Semiconductor Quantum Structures and Devices (22 papers), Semiconductor materials and devices (9 papers) and Advanced Semiconductor Detectors and Materials (8 papers). J. C. P. Chang is often cited by papers focused on Semiconductor Quantum Structures and Devices (22 papers), Semiconductor materials and devices (9 papers) and Advanced Semiconductor Detectors and Materials (8 papers). J. C. P. Chang collaborates with scholars based in United States and Japan. J. C. P. Chang's co-authors include K. L. Kavanagh, M. R. Melloch, E. S. Harmon, J. M. Woodall, T. P. Chin, H. H. Wieder, J. M. Fernández, Anthony Lochtefeld, David D. Nolte and Jianhui Chen and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Magnetism and Magnetic Materials.

In The Last Decade

J. C. P. Chang

27 papers receiving 500 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. C. P. Chang United States	14	444	378	163	52	47	28	512
C.-L. Chen United States	5	448 1.0×	516 1.4×	109 0.7×	103 2.0×	35 0.7×	9	602
Yasuo Okuno Japan	12	392 0.9×	438 1.2×	213 1.3×	55 1.1×	28 0.6×	33	515
D. C. Walters United States	8	366 0.8×	345 0.9×	112 0.7×	74 1.4×	34 0.7×	17	456
C. Lanza United States	12	255 0.6×	415 1.1×	117 0.7×	34 0.7×	51 1.1×	20	477
J. Komeno Japan	17	586 1.3×	550 1.5×	192 1.2×	117 2.3×	59 1.3×	60	727
T. A. Gant United States	6	346 0.8×	254 0.7×	258 1.6×	35 0.7×	113 2.4×	10	530
A. Raymond France	13	525 1.2×	371 1.0×	123 0.8×	123 2.4×	30 0.6×	66	622
A. G. Thompson United States	8	336 0.8×	289 0.8×	156 1.0×	72 1.4×	36 0.8×	11	469
H. Shen United States	12	552 1.2×	499 1.3×	110 0.7×	93 1.8×	53 1.1×	22	624
H. Thomas United Kingdom	12	275 0.6×	358 0.9×	65 0.4×	96 1.8×	32 0.7×	46	411

Countries citing papers authored by J. C. P. Chang

Since Specialization

Citations

This map shows the geographic impact of J. C. P. Chang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. C. P. Chang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. C. P. Chang more than expected).

Fields of papers citing papers by J. C. P. Chang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. C. P. Chang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. C. P. Chang. The network helps show where J. C. P. Chang may publish in the future.

Co-authorship network of co-authors of J. C. P. Chang

This figure shows the co-authorship network connecting the top 25 collaborators of J. C. P. Chang. A scholar is included among the top collaborators of J. C. P. Chang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. C. P. Chang. J. C. P. Chang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Chaudhuri, Santanu, Philip F. Bagwell, D. T. McInturff, et al.. (1999). Is the ‘Finite Bias Anomaly’ in planar GaAs-superconductor junctions caused by point-contact-like structures?. Superlattices and Microstructures. 25(5-6). 745–755. 1 indexed citations

Crouse, David T., David D. Nolte, J. C. P. Chang, & M. R. Melloch. (1997). Optical absorption by Ag precipitates in AlGaAs. Journal of Applied Physics. 81(12). 7981–7987. 10 indexed citations

Pekarek, T. M., B. C. Crooker, David D. Nolte, et al.. (1997). Superparamagnetic behavior of Fe3GaAs precipitates in GaAs. Journal of Magnetism and Magnetic Materials. 169(3). 261–270. 5 indexed citations

McInturff, D. T., E. S. Harmon, J. C. P. Chang, T. M. Pekarek, & J. M. Woodall. (1996). The compensation and depletion behavior of iron doped GaAs grown by molecular beam epitaxy. Applied Physics Letters. 69(13). 1885–1887. 8 indexed citations

Melloch, M. R., David D. Nolte, J. M. Woodall, et al.. (1996). Molecular Beam Epitaxy of Nonstoichiometric Semiconductors and Multiphase Material Systems. Critical reviews in solid state and materials sciences. 21(3). 189–263. 49 indexed citations

Chang, J. C. P., T. P. Chin, & J. M. Woodall. (1996). Incoherent interface of InAs grown directly on GaP(001). Applied Physics Letters. 69(7). 981–983. 35 indexed citations

Melloch, M. R., I. Lahiri, David D. Nolte, et al.. (1996). Molecular beam epitaxy of high-quality, nonstoichiometric multiple quantum wells. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(3). 2271–2274. 9 indexed citations

Lochtefeld, Anthony, M. R. Melloch, J. C. P. Chang, & E. S. Harmon. (1996). The role of point defects and arsenic precipitates in carrier trapping and recombination in low-temperature grown GaAs. Applied Physics Letters. 69(10). 1465–1467. 88 indexed citations

Chin, T. P., et al.. (1995). Operation and device applications of a valved-phosphorus cracker in solid-source molecular-beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 13(2). 750–753. 13 indexed citations

10.

Harmon, E. S., et al.. (1995). Electrical and structural properties of Be- and Si-doped low-temperature-grown GaAs. Journal of Applied Physics. 77(4). 1471–1476. 13 indexed citations

11.

Goldman, R. S., J. C. P. Chang, & K. L. Kavanagh. (1994). <title>Control of surface morphology and strain relaxation in InGaAs grown on GaAs using a step-graded buffer</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2140. 179–188. 3 indexed citations

12.

Chin, T. P., Hong‐Wei Hou, C. W. Tu, J. C. P. Chang, & Nobuyuki Otsuka. (1994). InGaAs/InP and InAsP/InP quantum well structures on GaAs (100) with a linearly graded InGaP buffer layer grown by gas-source molecular beam epitaxy. Applied Physics Letters. 64(15). 2001–2003. 9 indexed citations

13.

Chang, J. C. P., N. Ōtsuka, E. S. Harmon, M. R. Melloch, & J. M. Woodall. (1994). Precipitation in Fe- or Ni-implanted and annealed GaAs. Applied Physics Letters. 65(22). 2801–2803. 18 indexed citations

14.

Chang, J. C. P., Bimal K. Kad, Steven Nutt, & K. L. Kavanagh. (1993). Anisotropic Surface Roughness in Strain Relaxed In_0.40GA_0.60As on Gaas with a Step-Graded In_xGA_1-xAs Buffer Layer. MRS Proceedings. 312. 3 indexed citations

15.

Chin, T. P., et al.. (1993). Gas-source molecular beam epitaxial growth, characterization, and light-emitting diode application of InxGa1−xP on GaP(100). Applied Physics Letters. 62(19). 2369–2371. 19 indexed citations

16.

Chen, Jianhui, J. M. Fernández, J. C. P. Chang, K. L. Kavanagh, & H. H. Wieder. (1992). Modulation-doped In_0.3Ga_0.7As/In_0.29Al_0.71As heterostructures grown on GaAs by step grading. Semiconductor Science and Technology. 7(4). 601–603. 14 indexed citations

17.

Kavanagh, K. L., et al.. (1992). Lattice tilt and dislocations in compositionally step-graded buffer layers for mismatched InGaAs/GaAs heterointerfaces. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(4). 1820–1823. 41 indexed citations

18.

Chang, J. C. P., Jianhui Chen, J. M. Fernández, H. H. Wieder, & K. L. Kavanagh. (1992). Strain relaxation of compositionally graded InxGa1−xAs buffer layers for modulation-doped In0.3Ga0.7As/In0.29Al0.71As heterostructures. Applied Physics Letters. 60(9). 1129–1131. 75 indexed citations

19.

Lin, Chia‐Liang, et al.. (1991). Bulk and interfacial properties of the compositionally graded InxAl1−xAs (x≤0.52) quasi-insulator and its applications. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 9(4). 2411–2414.

20.

Chang, J. C. P., T. P. Chin, K. L. Kavanagh, & C. W. Tu. (1991). High-resolution x-ray diffraction of InAlAs/InP superlattices grown by gas source molecular beam epitaxy. Applied Physics Letters. 58(14). 1530–1532. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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