Euijoon Yoon

6.2k total citations
298 papers, 5.2k citations indexed

About

Euijoon Yoon is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Euijoon Yoon has authored 298 papers receiving a total of 5.2k indexed citations (citations by other indexed papers that have themselves been cited), including 164 papers in Electrical and Electronic Engineering, 150 papers in Materials Chemistry and 117 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Euijoon Yoon's work include GaN-based semiconductor devices and materials (109 papers), Semiconductor Quantum Structures and Devices (88 papers) and Semiconductor materials and devices (72 papers). Euijoon Yoon is often cited by papers focused on GaN-based semiconductor devices and materials (109 papers), Semiconductor Quantum Structures and Devices (88 papers) and Semiconductor materials and devices (72 papers). Euijoon Yoon collaborates with scholars based in South Korea, United States and Japan. Euijoon Yoon's co-authors include Gun‐Do Lee, Jamie H. Warner, Alex W. Robertson, Nong‐Moon Hwang, Kuang He, Kai‐Ming Ho, Chong Wang, Yongjo Park, Angus I. Kirkland and Doh-Yeon Kim and has published in prestigious journals such as Physical Review Letters, Advanced Materials and Nature Communications.

In The Last Decade

Euijoon Yoon

289 papers receiving 5.0k citations

Peers

Euijoon Yoon
Comparison fields: 5 of 94
  • Materials Chemistry 3.3k
  • Electrical and Electronic Engineering 2.4k
  • Atomic and Molecular Physics, and Optics 1.3k
  • Condensed Matter Physics 1.3k
  • Biomedical Engineering 908
Replace D. Cherns with:
D. Cherns United Kingdom
Christian Elsässer Germany
C. Kisielowski United States
L. Tapfer Italy
Paul M. Voyles United States
D. K. Fork United States
John V. Badding United States
M. Luysberg Germany
A. J. Kellock United States
G.-C. Wang United States
D. Cherns United Kingdom View profile →
Citations per field, relative to Euijoon Yoon
Euijoon Yoon · 1×
Citations per year, relative to Euijoon Yoon
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Countries citing papers authored by Euijoon Yoon

Since Specialization
Citations

This map shows the geographic impact of Euijoon Yoon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Euijoon Yoon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Euijoon Yoon more than expected).

Fields of papers citing papers by Euijoon Yoon

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Euijoon Yoon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Euijoon Yoon. The network helps show where Euijoon Yoon may publish in the future.

Co-authorship network of co-authors of Euijoon Yoon

This figure shows the co-authorship network connecting the top 25 collaborators of Euijoon Yoon. A scholar is included among the top collaborators of Euijoon Yoon based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Euijoon Yoon. Euijoon Yoon is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
# Work Indexed citations
1 6
2 1
3 3
4 147
5 10
6 17
7 1
8
Electroreflectance and photoluminescence study on InGaN alloys
1
9 79
10 10
11 10
12 33
13 10
14 1
15
Growth of In-Rich InGaN/GaN Nanostructures by Metal-Organic Chemical Vapor Deposition and their Optical Properties
0
16 435
17
Energy levels of InAs/InP QD system with GaAs and InGaAs insertion layers by C-V and DLTS methods
1
18
Electrical characterization of InAs/InP self-assembled quantum dots with InGaAs strain-relief layers
2
19 39
20
Formation of a tensile - strained interfacial layer and the effect of growth interruption on the interfaces of InGaAs / InP superlattice grown by LP - MOCVD
0

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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