Tomo Ueno

435 total citations
36 papers, 358 citations indexed

About

Tomo Ueno is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Tomo Ueno has authored 36 papers receiving a total of 358 indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Electrical and Electronic Engineering, 22 papers in Materials Chemistry and 7 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Tomo Ueno's work include Semiconductor materials and devices (23 papers), Silicon Nanostructures and Photoluminescence (13 papers) and Thin-Film Transistor Technologies (9 papers). Tomo Ueno is often cited by papers focused on Semiconductor materials and devices (23 papers), Silicon Nanostructures and Photoluminescence (13 papers) and Thin-Film Transistor Technologies (9 papers). Tomo Ueno collaborates with scholars based in Japan, Poland and United Kingdom. Tomo Ueno's co-authors include Yusuke Oniki, Iwao Ohdomari, Koichi Kuroiwa, Junji Senzaki, Hisashi Fukuda, Yasuo Tarui, Masahiko Hasumi, Naoki Nomura, Makoto Yasuda and T. Iwabuchi and has published in prestigious journals such as Journal of Applied Physics, Journal of The Electrochemical Society and Applied Surface Science.

In The Last Decade

Tomo Ueno

33 papers receiving 333 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Tomo Ueno Japan 11 288 217 61 61 54 36 358
T. Iwabuchi Japan 11 366 1.3× 204 0.9× 43 0.7× 59 1.0× 76 1.4× 31 422
P. Y. Hung United States 10 519 1.8× 228 1.1× 76 1.2× 39 0.6× 58 1.1× 29 576
T. Conard Belgium 6 346 1.2× 192 0.9× 44 0.7× 84 1.4× 20 0.4× 19 390
G. Pant United States 14 417 1.4× 135 0.6× 43 0.7× 32 0.5× 39 0.7× 17 428
Abdennaceur Karoui United States 12 230 0.8× 184 0.8× 84 1.4× 59 1.0× 63 1.2× 45 333
C. Huffman United States 14 502 1.7× 203 0.9× 37 0.6× 66 1.1× 66 1.2× 38 581
H.F.W. Dekkers Belgium 15 563 2.0× 272 1.3× 99 1.6× 27 0.4× 66 1.2× 31 601
M. El-Bouanani United States 12 484 1.7× 164 0.8× 121 2.0× 165 2.7× 31 0.6× 16 514
Taeko Ikarashi Japan 13 319 1.1× 172 0.8× 99 1.6× 25 0.4× 39 0.7× 24 373
Benjamin Ballard United States 6 241 0.8× 218 1.0× 110 1.8× 33 0.5× 29 0.5× 10 325

Countries citing papers authored by Tomo Ueno

Since Specialization
Citations

This map shows the geographic impact of Tomo Ueno's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tomo Ueno with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tomo Ueno more than expected).

Fields of papers citing papers by Tomo Ueno

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tomo Ueno. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tomo Ueno. The network helps show where Tomo Ueno may publish in the future.

Co-authorship network of co-authors of Tomo Ueno

This figure shows the co-authorship network connecting the top 25 collaborators of Tomo Ueno. A scholar is included among the top collaborators of Tomo Ueno based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tomo Ueno. Tomo Ueno is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Goto, Ken, et al.. (2022). Effect of high temperature homoepitaxial growth of β-Ga2O3 by hot-wall metalorganic vapor phase epitaxy. Journal of Crystal Growth. 582. 126520–126520. 19 indexed citations
2.
Oniki, Yusuke & Tomo Ueno. (2012). Water-Related Hole Traps at Thermally Grown GeO2–Ge Interface. Japanese Journal of Applied Physics. 51(4S). 04DA01–04DA01. 4 indexed citations
3.
Suzuki, Yuya, et al.. (2011). Fabrication of High-k/Ge Stacks with High Quality GeO2 Interlayer. ECS Transactions. 41(3). 29–37.
4.
Oniki, Yusuke & Tomo Ueno. (2011). Generation and Controlling the Trap in Absorbent Germanium Oxide Film. Applied Physics Express. 4(8). 81101–81101. 5 indexed citations
5.
Suzuki, Yuya, et al.. (2010). Achievement of Excellent C-V Characteristics in GeO2/Ge System Using Post Metal Deposition Annealing. ECS Transactions. 33(6). 111–119. 1 indexed citations
6.
Oniki, Yusuke, et al.. (2010). Evaluation of GeO desorption behavior in the metal/GeO2/Ge structure and its improvement of the electrical characteristics. Journal of Applied Physics. 107(12). 124113–124113. 39 indexed citations
7.
Oniki, Yusuke, et al.. (2009). HfO2/Si and HfSiO/Si Structures Fabricated by Oxidation of Metal Thin Films. Japanese Journal of Applied Physics. 48(5S1). 05DA01–05DA01. 13 indexed citations
8.
Hasumi, Masahiko, et al.. (2008). Thermal Stability of HfO2 Films Fabricated by Metal Organic Chemical Vapor Deposition. Japanese Journal of Applied Physics. 47(1R). 31–31. 1 indexed citations
9.
Fukuda, Yukio, et al.. (2006). Electrical Properties of Germanium Oxynitride and Its Interface with Germanium Prepared by Electron-Cyclotron-Resonance Plasma Oxidation and Nitridation. Japanese Journal of Applied Physics. 45(9S). 7351–7351. 11 indexed citations
10.
Senzaki, Junji, et al.. (1996). Fabrication of c-Axis Oriented Pb(Zr, Ti)O3 Thin Films on Si(100) Substrates Using MgO Intermediate Layer. Japanese Journal of Applied Physics. 35(8R). 4195–4195. 17 indexed citations
11.
Senzaki, Junji, et al.. (1994). c-Axis-Oriented Pb(Zr, Ti)O3 Thin Films Prepared by Digital Metalorganic Chemical Vapor Deposition Method. Japanese Journal of Applied Physics. 33(7R). 4066–4066. 9 indexed citations
12.
Akiyama, T., et al.. (1994). Contributions of Silicon-Hydride Radicals to Hydrogenated Amorphous Silicon Film Formation in Windowless Photochemical Vapor Deposition System. Japanese Journal of Applied Physics. 33(2R). 950–950. 1 indexed citations
13.
Ueno, Tomo, T. Akiyama, Koichi Kuroiwa, & Yasuo Tarui. (1994). Highly efficient generation of high-energy photons and low-temperature oxidation of a crystal silicon surface with O1D radicals. Applied Surface Science. 79-80. 502–506. 6 indexed citations
14.
Fukuda, Hisashi, Makoto Yasuda, T. Iwabuchi, et al.. (1992). Process dependence of the SiO2/Si(100) interface trap density of ultrathin SiO2 films. Journal of Applied Physics. 72(5). 1906–1911. 33 indexed citations
15.
Ueno, Tomo, et al.. (1992). Deposition of Low Hydrogen Content Silicon Nitride Film Using High-Intensity Vacuum Ultraviolet Light Source in Windowless Photochemical Vapor Deposition Reactor. Japanese Journal of Applied Physics. 31(12R). 3972–3972. 3 indexed citations
16.
Ueno, Tomo, et al.. (1991). Atomic scale structure of microtwins in single crystal Si grown by lateral solid phase epitaxy. Journal of Applied Physics. 69(2). 808–811. 8 indexed citations
17.
Ueno, Tomo, et al.. (1990). Mechanism of dislocation formation during vertical solid phase epitaxy. Journal of Crystal Growth. 102(3). 643–646. 1 indexed citations
18.
Ohdomari, Iwao, et al.. (1989). Investigation of the (100)Si/amorphous insulator interface structure by a half-period image of a high-resolution electron microscope. Journal of Applied Physics. 65(8). 3069–3071. 1 indexed citations
19.
Kawarada, Hiroshi, et al.. (1988). Characterization of roughness and defects at an Si/SiO2 interface formed by lateral solid phase epitaxy using high-resolution electron microscopy. Journal of Applied Physics. 63(8). 2641–2644. 4 indexed citations
20.
Kawarada, Hiroshi, et al.. (1986). High-Resolution Electron Microscope Study of Silicon on Insulator Structure Grown by Lateral Solid Phase Epitaxy. Japanese Journal of Applied Physics. 25(10A). L814–L814. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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