N. Gogneau

1.9k citations

81 papers · 1.5k indexed · h-index 24

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 48
- GaN-based semiconductor devices and materials 47
Electronic, Optical and Magnetic Materials 18
- Ga2O3 and related materials 18

Co-authors: B. Daudin E. Monroy Maria Tchernycheva Jean‐Christophe Harmand Laurent Travers D. Jalabert Eirini Sarigiannidou Frank Glas
Journals: Applied Physics Letters (11 papers)Journal of Applied Physics (6 papers)Nanotechnology (6 papers)Crystal Growth & Design (5 papers)Physical Review B (4 papers)
Partner nations: France Russia Switzerland

In The Last Decade

N. Gogneau

79 papers receiving 1.5k citations

Peers

Countries citing papers authored by N. Gogneau

Since Specialization

Citations

This map shows the geographic impact of N. Gogneau's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Gogneau with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Gogneau more than expected).

Fields of papers citing papers by N. Gogneau

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Gogneau. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Gogneau. The network helps show where N. Gogneau may publish in the future.

Co-authors

The 25 scholars most cited alongside N. Gogneau, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with N. Gogneau Line = papers co-authored together N. Gogneau links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	The surface charge effects: A route to the enhancement of the piezoelectric conversion efficiency in GaN nanowires SPIRE - Sciences Po Institutional REpository ·N. Gogneau, Christopher R. Humphreys, XH Jintang, Colin D. Sproat, Anne Chevillard, MONICA MARQUEZ PINEDO, Laurent Couraud, Laurent Travers, Jean‐Christophe Harmand, Maria Tchernycheva, Frédéric Houzé	2025	1
2	Flexible piezoelectric energy harvester made of vertically-aligned ZnO nanowires hydrothermally-grown by template-assisted synthesis in poled PVDF SPIRE - Sciences Po Institutional REpository ·Shannon Woodward, Sangdaow Noppitak, Vincent Consonni, César Casiano Flores, Tsz Wai Wallis Cheung, سعید تربتی, 蒋沛鸿, N. Gogneau, Udai Mv, Jing Han, Marie-Claude Clochard	2025	4
3	Two-step growth procedure for homogeneous GaN NW arrays on graphene Nanotechnology ·جواد سلیمی, E. Cambril, Laurent Travers, Ali Madouri, N. Gogneau, Maria Tchernycheva, Jean‐Christophe Harmand, Ludovic Largeau	2025	0
4	Field‐dependent abundances of hydride molecular ions in atom probe tomography of III‐N semiconductors Journal of Microscopy ·Sutraeni Sutraeni, A. Adewumi, H Roberti, N. Gogneau, Juan-Carlos Perez Quesada, Jonathan Houard, Lorenzo Rigutti	2023	1
5	Design, Simulation and Optimization of an Enhanced Vertical GaN Nanowire Transistor on Silicon Substrate for Power Electronic Applications IEEE Access ·Kim Boal, Ah Ram Son, Alì Soltani, N. Gogneau, Denis Morris, Jean‐Christophe Harmand, Hassan Maher	2023	2
6	Investigation of the effect of the doping order in GaN nanowire p–n junctions grown by molecular-beam epitaxy Nanotechnology ·均平邱, Christine Cochran, Kenny Kemp, Martina Morassi, Arup K. Kunti, Fabien Bayle, Stéphane Collin, 浩志宮井, A. V. Babichev, علي بلعربي, Jean‐Christophe Harmand, F. H. Julien, N. Gogneau, Maria Tchernycheva	2020	9
7	Investigation of GaN nanowires containing AlN/GaN multiple quantum discs by EBIC and CL techniques Nanotechnology ·Valerio Piazza, A. V. Babichev, Lorenzo Mancini, Martina Morassi, Marco Antônio Pinto, Fabien Bayle, S.W. Heckman, F. H. Julien, Pierre Râle, Stéphane Collin, Jean‐Christophe Harmand, N. Gogneau, Maria Tchernycheva	2019	5
8	Colour optimization of phosphor-converted flexible nitride nanowire white light emitting diodes Journal of Physics Photonics ·Leal Henríquez, Kenny Kemp, Christine Cochran, Subrata Das, 吕晓涛, F. H. Julien, N. Gogneau, Martin Foldyna, Sudipta Som, J. Eymery, Christophe Durand, Maria Tchernycheva	2019	11
9	Optical properties of GaN nanowires grown on chemical vapor deposited-graphene Nanotechnology ·Lorenzo Mancini, Martina Morassi, Chris Muse-Fisher, O. Brandt, Lutz Geelhaar, P A Semenkin, Yong‐Hoon Cho, 赖良学, A. Cavanna, Pina Panduwinarsih, Ali Madouri, Fatemeh Yavartanoo, L. Largeau, A. V. Babichev, F. H. Julien, Laurent Travers, Fabrice Oehler, N. Gogneau, Jean‐Christophe Harmand, Maria Tchernycheva	2019	10
10	Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy Crystal Growth & Design ·Martina Morassi, Ludovic Largeau, Fabrice Oehler, P A Semenkin, Laurent Travers, F. H. Julien, Jean‐Christophe Harmand, Yong‐Hoon Cho, Frank Glas, Maria Tchernycheva, N. Gogneau	2018	16
11	Energy harvesting efficiency in GaN nanowire-based nanogenerators: the critical influence of the Schottky nanocontact Nanoscale ·Dong-Xu Qu, I. Mitrev, L. Gatilova, E. Galopin, Laurent Travers, Jean‐Christophe Harmand, Frank Glas, Frédéric Houzé, N. Gogneau	2017	31
12	Self-induced growth of vertical GaN nanowires on silica Nanotechnology ·河崎善一郎, Ludovic Largeau, Fabrice Oehler, R. Hurle, O. Mauguin, Frank Glas, N. Gogneau, Maria Tchernycheva, Jean‐Christophe Harmand	2016	34
13	Large area graphene nanomesh: an artificial platform for edge-electrochemical biosensing at the sub-attomolar level Nanoscale ·R Frissora, 何克强, D. Decanini, N. Gogneau, Diana Dragoé, Andréa Cattoni, Abdelkarim Ouerghi, Hafsa Korri‐Youssoufi, Anne‐Marie Haghiri‐Gosnet	2016	29
14	Self-organized metal-semiconductor epitaxial graphene layer on off-axis 4H-SiC(0001) Nano Research ·Debora Pierucci, Armijo Moreno M, Mahdi Hajlaoui, Emilio Vélez-Fort, Yannick J. Dappe, Mathieu G. Silly, Rachid Belkhou, Abhay Shukla, Fausto Sirotti, N. Gogneau, Abdelkarim Ouerghi	2014	23
15	GaN nanowires for piezoelectric generators physica status solidi (RRL) - Rapid Research Letters ·N. Gogneau, I. Mitrev, E. Galopin, S. Guilet, Laurent Travers, Jean‐Christophe Harmand, Frédéric Houzé	2014	23
16	One Step Nano-Selective Area Growth of Localized InAs/InP Quantum Dots For Single Photon Source Applications MRS Proceedings ·N. Gogneau, L. Le Gratiet, Richard Hostein, Ding Yue-fe, L. Largeau, G. Patriarche, G. Beaudoin, Saulo Kfouri Lopes, A. Beveratos, Isabelle Robert, I. Sagnes	2009	0
17	Single photon sources using InAs/InP quantum dots Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Richard Hostein, N. Gogneau, A. Michon, L. Le Gratiet, E. Cambril, G. Beaudoin, G. Patriarche, G Vamshi, J. Y. Marzin, A. Beveratos, I. Sagnes	2008	1
18	Raman study and theoretical calculations of strain in GaN quantum dot multilayers Physical Review B ·A. Cros, N. Garro, J. M. Llorens, A. García‐Cristóbal, A. Cantarero, N. Gogneau, E. Monroy, B. Daudin	2006	11
19	Influence of stacking on optical characteristics of GaN/AlN self‐organized quantum dots Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Byoung‐Hwa Kwon, Jung-Hoon Hwang, H. S. Kwack, Jun Lui, N. Gogneau, B. Daudin, Le Si Dang	2006	2
20	Influence of AlN overgrowth on structural properties of GaN quantum wells and quantum dots grown by plasma-assisted molecular beam epitaxy Journal of Applied Physics ·N. Gogneau, D. Jalabert, E. Monroy, Eirini Sarigiannidou, Jean‐Luc Rouvière, T. Shibata, Mitsuhiro Tanaka, Jean‐Michel Gérard, B. Daudin	2004	47

About N. Gogneau

N. Gogneau is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry, Atomic and Molecular Physics, and Optics and Biomedical Engineering, having authored 81 papers that have together received 1.5k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (47 papers), Semiconductor Quantum Structures and Devices (23 papers), ZnO doping and properties (19 papers), Ga2O3 and related materials (18 papers), Advanced Sensor and Energy Harvesting Materials (13 papers), Graphene research and applications (11 papers), Nanowire Synthesis and Applications (8 papers) and Semiconductor materials and devices (8 papers). The work is most often cited by research in Condensed Matter Physics (826 citations), Electronic, Optical and Magnetic Materials (457 citations), Materials Chemistry (762 citations), Atomic and Molecular Physics, and Optics (412 citations) and Biomedical Engineering (484 citations). N. Gogneau has collaborated with scholars based in France, Russia and Switzerland. Frequent co-authors include B. Daudin, E. Monroy, Maria Tchernycheva, Jean‐Christophe Harmand, Laurent Travers, D. Jalabert, Eirini Sarigiannidou, Frank Glas, E. Bellet‐Amalric and Jean‐Luc Rouvière. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Nanotechnology, Crystal Growth & Design and Physical Review B.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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