S. S. Su

482 total citations
25 papers, 341 citations indexed

About

S. S. Su is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Condensed Matter Physics. According to data from OpenAlex, S. S. Su has authored 25 papers receiving a total of 341 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 12 papers in Electronic, Optical and Magnetic Materials and 11 papers in Condensed Matter Physics. Recurrent topics in S. S. Su's work include Semiconductor materials and devices (15 papers), GaN-based semiconductor devices and materials (11 papers) and Copper Interconnects and Reliability (6 papers). S. S. Su is often cited by papers focused on Semiconductor materials and devices (15 papers), GaN-based semiconductor devices and materials (11 papers) and Copper Interconnects and Reliability (6 papers). S. S. Su collaborates with scholars based in China and Singapore. S. S. Su's co-authors include Yaozong Zhong, Qian Sun, Yu Zhou, Xiaolu Guo, Hui Yang, Hongwei Gao, Jianxun Liu, Xiaoning Zhan, Xin Chen and Junlei He and has published in prestigious journals such as Applied Physics Letters, ACS Applied Materials & Interfaces and IEEE Transactions on Electron Devices.

In The Last Decade

S. S. Su

21 papers receiving 329 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. S. Su China 10 250 250 205 72 69 25 341
Yuichi Minoura Japan 8 281 1.1× 262 1.0× 108 0.5× 84 1.2× 68 1.0× 19 347
C. J. Polley United States 11 333 1.3× 238 1.0× 213 1.0× 93 1.3× 79 1.1× 16 376
S. C. Foo Singapore 9 328 1.3× 301 1.2× 180 0.9× 74 1.0× 62 0.9× 11 369
B. Peres United States 12 347 1.4× 282 1.1× 209 1.0× 100 1.4× 51 0.7× 21 401
Gourab Dutta India 9 265 1.1× 240 1.0× 155 0.8× 82 1.1× 76 1.1× 28 331
Jean-Claude de Jaeger France 11 308 1.2× 268 1.1× 112 0.5× 54 0.8× 74 1.1× 17 352
Cen Kong China 9 301 1.2× 278 1.1× 128 0.6× 86 1.2× 48 0.7× 21 361
Erdem Arkun United States 11 279 1.1× 284 1.1× 114 0.6× 77 1.1× 101 1.5× 27 370
Y. K. T. Maung Singapore 8 419 1.7× 395 1.6× 246 1.2× 91 1.3× 78 1.1× 9 475
Yueh-Chin Lin Taiwan 12 231 0.9× 324 1.3× 118 0.6× 90 1.3× 102 1.5× 52 402

Countries citing papers authored by S. S. Su

Since Specialization
Citations

This map shows the geographic impact of S. S. Su's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. S. Su with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. S. Su more than expected).

Fields of papers citing papers by S. S. Su

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. S. Su. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. S. Su. The network helps show where S. S. Su may publish in the future.

Co-authorship network of co-authors of S. S. Su

This figure shows the co-authorship network connecting the top 25 collaborators of S. S. Su. A scholar is included among the top collaborators of S. S. Su based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. S. Su. S. S. Su is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tang, Xiaoying, et al.. (2025). Prognostic value of circulating Chromogranin A in prostate cancer: a systematic review and meta-analysis. Frontiers in Oncology. 15. 1521558–1521558. 1 indexed citations
2.
Xiang, Z.D., Zhi‐Wu Yu, Jianfeng Mao, et al.. (2025). Research on rail crack detection based on diamond nitrogen-vacancy color center. Journal of Physics Conference Series. 2990(1). 12012–12012.
3.
Zhang, Bo, et al.. (2025). Large language models for explainable fault diagnosis of machines. Engineering Applications of Artificial Intelligence. 163. 113131–113131.
4.
Su, S. S., Jihong Zhao, Xiaofeng Tong, et al.. (2024). Design and simulation of all-fiber direct current transformer system based on Diamond NV color center. 944–951.
5.
Ma, Hang, et al.. (2024). Development of a machine learning-based predictive model for transitional cell carcinoma of the renal pelvis in White Americans: a SEER-based study. Translational Andrology and Urology. 13(12). 2681–2693. 1 indexed citations
6.
Guo, Xiaolu, Yaozong Zhong, Yu Zhou, et al.. (2021). Nitrogen-Implanted Guard Rings for 600-V Quasi-Vertical GaN-on-Si Schottky Barrier Diodes With a BFOM of 0.26 GW/cm2. IEEE Transactions on Electron Devices. 68(11). 5682–5686. 29 indexed citations
7.
Guo, Xiaolu, Yaozong Zhong, Junlei He, et al.. (2021). High-Voltage and High-ION/IOFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination. IEEE Electron Device Letters. 42(4). 473–476. 49 indexed citations
8.
Guo, Xiaolu, Yaozong Zhong, Xin Chen, et al.. (2021). Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination. Applied Physics Letters. 118(24). 44 indexed citations
9.
10.
Chen, Xin, Yaozong Zhong, Xiaolu Guo, et al.. (2021). Influence of traps on the gate reverse characteristics of normally-off high-electron-mobility transistors with regrown p-GaN gate. Applied Physics Express. 14(10). 104005–104005. 5 indexed citations
11.
Chen, Xin, Yaozong Zhong, Yu Zhou, et al.. (2021). Influence of the carrier behaviors in p-GaN gate on the threshold voltage instability in the normally off high electron mobility transistor. Applied Physics Letters. 119(6). 20 indexed citations
12.
Zhong, Yaozong, S. S. Su, Xin Chen, et al.. (2020). Gate Reliability and its Degradation Mechanism in the Normally OFF High-Electron-Mobility Transistors With Regrown p-GaN Gate. IEEE Journal of Emerging and Selected Topics in Power Electronics. 9(3). 3715–3724. 17 indexed citations
13.
Su, S. S., Yaozong Zhong, Yu Zhou, et al.. (2020). A p‐GaN‐Gated Hybrid Anode Lateral Diode with a Thicker AlGaN Barrier Layer. physica status solidi (a). 217(7). 7 indexed citations
14.
Zhong, Yaozong, Qian Sun, Hui Yang, et al.. (2019). Normally-off HEMTs With Regrown p-GaN Gate and Low-Pressure Chemical Vapor Deposition SiNx Passivation by Using an AlN Pre-Layer. IEEE Electron Device Letters. 40(9). 1495–1498. 57 indexed citations
15.
Su, S. S., et al.. (2019). A double-blockchains based Digital Archives Management Framework and Implementation. 1–6. 1 indexed citations
16.
Zhong, Yaozong, S. S. Su, Yu Zhou, et al.. (2019). Effect of Thermal Cleaning Prior to p-GaN Gate Regrowth for Normally Off High-Electron-Mobility Transistors. ACS Applied Materials & Interfaces. 11(24). 21982–21987. 23 indexed citations
17.
Zhang, D.H., Ping Lu, S. S. Su, et al.. (2004). Metal–organic chemical vapor deposited copper interconnects for deep submicron integrated circuits. Thin Solid Films. 471(1-2). 270–272. 5 indexed citations
18.
Chen, Zhe, K. Prasad, Ping Lu, et al.. (2004). Dielectric/metal sidewall diffusion barrier for Cu/porous ultralow-k interconnect technology. Applied Physics Letters. 84(13). 2442–2444. 26 indexed citations
19.
Li, C.Y., D.H. Zhang, S. S. Su, et al.. (2004). Comparative study of argon and hydrogen/helium plasma treatments on the properties of Cu/SiLK damascene structures for interconnect technology. Thin Solid Films. 462-463. 172–175. 2 indexed citations
20.
Chen, Zhe, et al.. (2004). Characterization and performance of dielectric diffusion barriers for Cu metallization. Thin Solid Films. 462-463. 223–226. 21 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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