Haicheng Cao

860 total citations
47 papers, 632 citations indexed

About

Haicheng Cao is a scholar working on Condensed Matter Physics, Materials Chemistry and Electrical and Electronic Engineering. According to data from OpenAlex, Haicheng Cao has authored 47 papers receiving a total of 632 indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Condensed Matter Physics, 23 papers in Materials Chemistry and 22 papers in Electrical and Electronic Engineering. Recurrent topics in Haicheng Cao's work include GaN-based semiconductor devices and materials (36 papers), Ga2O3 and related materials (18 papers) and ZnO doping and properties (17 papers). Haicheng Cao is often cited by papers focused on GaN-based semiconductor devices and materials (36 papers), Ga2O3 and related materials (18 papers) and ZnO doping and properties (17 papers). Haicheng Cao collaborates with scholars based in Saudi Arabia, China and United States. Haicheng Cao's co-authors include Lixia Zhao, Shan Lin, Zhanhong Ma, Chao Yang, Jing Li, Zhiguo Yu, Xin Xi, Jinmin Li, Xiaohang Li and Xiaodong Li and has published in prestigious journals such as Advanced Materials, Applied Physics Letters and ACS Applied Materials & Interfaces.

In The Last Decade

Haicheng Cao

43 papers receiving 612 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Haicheng Cao Saudi Arabia 16 357 319 272 248 112 47 632
Malleswararao Tangi Saudi Arabia 14 301 0.8× 411 1.3× 181 0.7× 244 1.0× 133 1.2× 33 587
Nasir Alfaraj Saudi Arabia 14 212 0.6× 367 1.2× 230 0.8× 326 1.3× 168 1.5× 32 610
Yanhui Xing China 13 227 0.6× 390 1.2× 245 0.9× 233 0.9× 101 0.9× 44 597
Konthoujam James Singh Taiwan 14 313 0.9× 375 1.2× 454 1.7× 139 0.6× 117 1.0× 25 733
Kanglin Xiong United States 15 298 0.8× 254 0.8× 359 1.3× 170 0.7× 234 2.1× 42 652
Zu-Po Yang Taiwan 14 143 0.4× 210 0.7× 250 0.9× 140 0.6× 121 1.1× 24 525
L. Arivazhagan India 15 395 1.1× 154 0.5× 580 2.1× 163 0.7× 99 0.9× 42 757
Jossue Montes United States 19 556 1.6× 270 0.8× 557 2.0× 444 1.8× 108 1.0× 34 850

Countries citing papers authored by Haicheng Cao

Since Specialization
Citations

This map shows the geographic impact of Haicheng Cao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Haicheng Cao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Haicheng Cao more than expected).

Fields of papers citing papers by Haicheng Cao

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Haicheng Cao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Haicheng Cao. The network helps show where Haicheng Cao may publish in the future.

Co-authorship network of co-authors of Haicheng Cao

This figure shows the co-authorship network connecting the top 25 collaborators of Haicheng Cao. A scholar is included among the top collaborators of Haicheng Cao based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Haicheng Cao. Haicheng Cao is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chen, Zhizhong, Haodong Zhang, Zhiyuan Liu, et al.. (2025). A Pathway to Low-Shift Red LEDs: Bulk InGaN as the Active Region. ACS Applied Electronic Materials. 7(22). 10471–10477.
2.
Liu, Zhiyuan, Haicheng Cao, Kexin Ren, et al.. (2025). 2.3-μm deep UV micro-LEDs fabricated by self-aligned selective thermal oxidation process. Optics Letters. 50(11). 3628–3628.
3.
Li, Jiaqiang, Ke Zhou, Qing Liu, et al.. (2025). Synthesis of two-dimensional ordered graphdiyne membranes for highly efficient and selective water transport. Nature Water. 3(3). 307–318. 7 indexed citations
4.
Cao, Haicheng, Zhiyuan Liu, Xiao Tang, et al.. (2025). Performance Enhancement of n-Type AlN Schottky Barrier Diodes Using Oxygen-Rich Rapid Thermal Annealing Treatment. IEEE Transactions on Electron Devices. 72(3). 1533–1536. 6 indexed citations
5.
Lu, Yi, Haicheng Cao, Tsung‐Han Tsai, et al.. (2025). Band Alignment and Leakage Mechanism Analysis of p-Si/n-AlN Heterojunction Diodes with the Al 2 O 3 Interlayer. ACS Applied Electronic Materials. 7(21). 9700–9709.
6.
Liu, Zhiyuan, et al.. (2025). Alleviate sidewall damage of InGaN green micro-LEDs by atomic layer etching. Optics Letters. 50(11). 3756–3756. 4 indexed citations
7.
Khandelwal, Vishal, et al.. (2025). On Ga2O3 Self‐Switching Nano‐Diodes. Advanced Electronic Materials. 11(11).
8.
Liu, Zhiyuan, Haicheng Cao, Xiao Tang, et al.. (2025). Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effect. Light Science & Applications. 14(1). 64–64. 10 indexed citations
9.
Lu, Yi, Jiarui Gong, Haicheng Cao, et al.. (2025). High Rectification, Low Leakage p-Si/n-AlN Heterojunction PN Diode. IEEE Electron Device Letters. 46(7). 1219–1222. 1 indexed citations
10.
Liu, Zhiyuan, et al.. (2025). Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching. Applied Physics Letters. 126(15). 2 indexed citations
11.
Tang, Xiao, et al.. (2024). Toward crack-free AlN growth on silicon (111) by introducing boron incorporated buffer layer via MOCVD. Applied Physics Letters. 125(17). 3 indexed citations
12.
Liu, Zhiyuan, Haicheng Cao, Na Xiao, et al.. (2024). Significant improvement of n-contact performance and wall plug efficiency of AlGaN-based deep ultraviolet light-emitting diodes by atomic layer etching. Optics Letters. 49(16). 4533–4533. 9 indexed citations
13.
Cao, Haicheng, Xiao Tang, Che‐Hao Liao, et al.. (2024). Optimization of Growth Temperature and V/III Ratio toward High-Quality Si-Doped Aluminum Nitride Thin Films on Sapphire. Crystal Growth & Design. 24(19). 7871–7877. 2 indexed citations
14.
Kumar, Mritunjay, Vishal Khandelwal, Saravanan Yuvaraja, et al.. (2024). High-temperature operation of Al2O3/Ga2O3 bi-layer gate stack GaN MOS-HEMT up to 450 °C with suppressed gate leakage. Japanese Journal of Applied Physics. 63(10). 100905–100905. 2 indexed citations
15.
Xi, Xin, Lixia Zhao, Haicheng Cao, et al.. (2023). The fabrication of GaN/InGaN nano-pyramids photoanode and its enhanced water splitting performance. Journal of Alloys and Compounds. 971. 172720–172720. 3 indexed citations
16.
Tang, Xiao, Yi Lu, Che‐Hao Liao, et al.. (2023). Flexible self-powered DUV photodetectors with high responsivity utilizing Ga2O3/NiO heterostructure on buffered Hastelloy substrates. Applied Physics Letters. 122(12). 26 indexed citations
17.
Liu, Zhiyuan, Yi Lu, Haicheng Cao, et al.. (2022). Effect of the AlN strain compensation layer on InGaN quantum well red-light-emitting diodes beyond epitaxy. Optics Letters. 47(23). 6229–6229. 16 indexed citations
18.
Zhang, Chengxi, Lyudmila Turyanska, Haicheng Cao, et al.. (2019). Hybrid light emitting diodes based on stable, high brightness all-inorganic CsPbI3 perovskite nanocrystals and InGaN. Nanoscale. 11(28). 13450–13457. 31 indexed citations
19.
Ma, Zhanhong, Haicheng Cao, Xuejiao Sun, et al.. (2019). Failure Mechanism of Phosphors in GaN‐Based White LEDs. physica status solidi (a). 216(6). 12 indexed citations
20.
Cao, Haicheng, et al.. (2009). Effect of Si, Al and Bi on Structure and Properties of As-welded and Austempered Ductile Iron Weld Metals during Gas Welding. Journal of Material Science and Technology. 12(5). 347–352. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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