Leiying Ying

1.1k total citations
82 papers, 861 citations indexed

About

Leiying Ying is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Leiying Ying has authored 82 papers receiving a total of 861 indexed citations (citations by other indexed papers that have themselves been cited), including 60 papers in Electrical and Electronic Engineering, 44 papers in Condensed Matter Physics and 36 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Leiying Ying's work include GaN-based semiconductor devices and materials (44 papers), Semiconductor Lasers and Optical Devices (31 papers) and Semiconductor Quantum Structures and Devices (28 papers). Leiying Ying is often cited by papers focused on GaN-based semiconductor devices and materials (44 papers), Semiconductor Lasers and Optical Devices (31 papers) and Semiconductor Quantum Structures and Devices (28 papers). Leiying Ying collaborates with scholars based in China, Taiwan and Japan. Leiying Ying's co-authors include Baoping Zhang, Yang Mei, Zhi-Wei Zheng, Jiangyong Zhang, Hao Long, Guoen Weng, Jianping Liu, Zengcheng Li, Werner Hofmann and Hao Long and has published in prestigious journals such as Advanced Materials, Applied Physics Letters and Advanced Functional Materials.

In The Last Decade

Leiying Ying

74 papers receiving 786 citations

Peers

Leiying Ying

EEE

CMP

AMPO

EOMM

Céline Vergnaud France

Gabriele Penazzi Italy

M. Kasap Türkiye

Biplab Sarkar India

S. J. Chua Singapore

D. S. Sizov Russia

Sumei Wang China

Vladimir V. Fedorov Russia

Zhaoxia Bi Sweden

B. Holländer Germany

Céline Vergnaud France

Leiying Ying

447 ×0.8

EEE

204 ×0.5

CMP

747 ×2.1

AMPO

715 ×2.3

173 ×1.0

EOMM

Citations per year, relative to Leiying Ying Leiying Ying (= 1×) peers Céline Vergnaud

Countries citing papers authored by Leiying Ying

Since Specialization

Citations

This map shows the geographic impact of Leiying Ying's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Leiying Ying with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Leiying Ying more than expected).

Fields of papers citing papers by Leiying Ying

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Leiying Ying. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Leiying Ying. The network helps show where Leiying Ying may publish in the future.

Co-authorship network of co-authors of Leiying Ying

This figure shows the co-authorship network connecting the top 25 collaborators of Leiying Ying. A scholar is included among the top collaborators of Leiying Ying based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Leiying Ying. Leiying Ying is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Yang, Tao, Leiying Ying, Jinhui Chen, et al.. (2025). On‐Chip Broadband Multiwavelength Microlaser Array in Visible Region. Laser & Photonics Review. 19(14).

Zhong, Hao, et al.. (2025). Dual‐Modal Sensing Platform Based on Flexible GaN Microdisk Lasers on PDMS Substrate. Advanced Functional Materials. 35(37). 2 indexed citations

Ying, Leiying, et al.. (2025). High-performance GaN-based green resonant cavity-light emitting diodes with an Ag bottom mirror. Optics Letters. 50(8). 2763–2763. 1 indexed citations

Wang, Ce, Baoping Zhang, Daming Zhang, et al.. (2024). Achieving Multiwavelength Optical Amplification Based on Polymer Waveguides Doped with NaYF₄:Er³⁺, Yb³⁺ Nanoparticles under Commercial and Convenient Led Pumping. Advanced Materials Technologies. 9(7). 4 indexed citations

Ying, Leiying, et al.. (2024). Low threshold lasing of GaN-based vertical-cavity surface-emitting lasers with thin InGaN/GaN quantum well active region. Optics & Laser Technology. 182. 112117–112117. 1 indexed citations

Wang, K., et al.. (2023). Enhancing Performance of GaN/Ga₂O₃ P‐N Junction Uvc Photodetectors via Interdigitated Structure. Small Methods. 8(7). e2301148–e2301148. 25 indexed citations

Ou, Wei, Yang Mei, Hao Long, et al.. (2023). Orthogonally and linearly polarized green emission from a semipolar InGaN based microcavity. Nanophotonics. 13(1). 75–83. 2 indexed citations

Li, Minghao, et al.. (2023). Temperature effects on the performance of ferroelectric FET with random grain phase variation for non-volatile memory application. Semiconductor Science and Technology. 38(5). 55012–55012. 2 indexed citations

Yang, Tao, Wei Ou, Leiying Ying, et al.. (2023). Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity. Nano-Micro Letters. 15(1). 223–223. 18 indexed citations

10.

Zheng, Zhongming, Yukun Wang, Shiping Guo, et al.. (2023). High-quality AlGaN epitaxial structures and realization of UVC vertical-cavity surface-emitting lasers. Science China Materials. 66(5). 1978–1988. 6 indexed citations

11.

Mei, Yang, Zhongming Zheng, Leiying Ying, et al.. (2023). Effects of different current confinement layers in GaN-based VCSELs. AIP Advances. 13(7). 2 indexed citations

12.

Yang, Shuai, et al.. (2022). GaN-based green resonant-cavity light-emitting diodes with Al mirror and copper plate. Optics Letters. 47(11). 2858–2858. 5 indexed citations

13.

Zhang, Baoping, Ce Wang, Fan Wang, et al.. (2021). Optical gain based on NaYF4: Er3+, Yb3+ nanoparticles-doped polymer waveguide under convenient LED pumping. Applied Physics Letters. 118(17). 16 indexed citations

14.

Xu, Qian, et al.. (2021). Effect of an inserted Al ₂ O ₃ passivation layer for atomic layer deposited HfO ₂ on indium phosphide. Semiconductor Science and Technology. 36(12). 125015–125015. 3 indexed citations

15.

Zheng, Zhongming, Yang Mei, Hao Long, et al.. (2021). AlGaN-Based Deep Ultraviolet Vertical-Cavity Surface-Emitting Laser. IEEE Electron Device Letters. 42(3). 375–378. 21 indexed citations

16.

Lai, Shouqiang, et al.. (2021). Theoretical study and optimization of the green InGaN/GaN multiple quantum wells with pre-layer. Superlattices and Microstructures. 155. 106906–106906. 19 indexed citations

17.

Zheng, Zhongming, Hao Long, Mathieu Leroux, et al.. (2020). Photoassisted chemical smoothing of AlGaN surface after laser lift-off. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 38(4). 4 indexed citations

18.

Long, Hao, et al.. (2018). Reduction of Lasing Threshold of GaN-Based Vertical-Cavity Surface-Emitting Lasers by Using Short Cavity Lengths. IEEE Transactions on Electron Devices. 65(6). 2504–2508. 3 indexed citations

19.

Mei, Yang, Guoen Weng, Baoping Zhang, et al.. (2016). Quantum dot vertical-cavity surface-emitting lasers covering the ‘green gap’. Light Science & Applications. 6(1). e16199–e16199. 98 indexed citations

20.

Zhang, Jiangyong, Wenjie Liu, Ming Chen, et al.. (2012). Performance enhancement of GaN-based light emitting diodes by transfer from sapphire to silicon substrate using double-transfer technique. Nanoscale Research Letters. 7(1). 244–244. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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