Wei Guo

1.9k total citations
128 papers, 1.5k citations indexed

About

Wei Guo is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Wei Guo has authored 128 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 68 papers in Condensed Matter Physics, 53 papers in Electrical and Electronic Engineering and 49 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Wei Guo's work include GaN-based semiconductor devices and materials (68 papers), Ga2O3 and related materials (44 papers) and ZnO doping and properties (31 papers). Wei Guo is often cited by papers focused on GaN-based semiconductor devices and materials (68 papers), Ga2O3 and related materials (44 papers) and ZnO doping and properties (31 papers). Wei Guo collaborates with scholars based in China, United States and Saudi Arabia. Wei Guo's co-authors include Jichun Ye, Zhenhai Yang, Shibing Long, Yuheng Zeng, Haiding Sun, Pingqi Gao, Houqiang Xu, Li Chen, Kan‐Hao Xue and Zhongfang Zhang and has published in prestigious journals such as ACS Nano, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Wei Guo

122 papers receiving 1.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Wei Guo China 19 684 649 643 623 438 128 1.5k
Kunook Chung South Korea 16 512 0.7× 956 1.5× 495 0.8× 727 1.2× 370 0.8× 34 1.4k
Hyobin Yoo South Korea 21 595 0.9× 1.1k 1.7× 380 0.6× 440 0.7× 380 0.9× 42 1.6k
Junseok Heo South Korea 24 1.2k 1.7× 904 1.4× 399 0.6× 449 0.7× 711 1.6× 74 2.1k
Biplab Sarkar India 20 517 0.8× 350 0.5× 498 0.8× 665 1.1× 150 0.3× 75 1.0k
Soo Jin Chua Singapore 25 1.2k 1.8× 735 1.1× 513 0.8× 312 0.5× 452 1.0× 129 1.8k
Minghui Qin China 25 939 1.4× 1.1k 1.7× 882 1.4× 428 0.7× 296 0.7× 153 2.2k
Mohd Sharizal Alias Saudi Arabia 21 1.2k 1.7× 990 1.5× 322 0.5× 409 0.7× 195 0.4× 67 1.7k
Matthias Auf der Maur Italy 22 1.6k 2.4× 1.3k 2.1× 307 0.5× 781 1.3× 503 1.1× 123 2.6k
Abhishek Motayed United States 25 1.3k 1.9× 880 1.4× 382 0.6× 685 1.1× 727 1.7× 72 1.9k

Countries citing papers authored by Wei Guo

Since Specialization
Citations

This map shows the geographic impact of Wei Guo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Wei Guo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Wei Guo more than expected).

Fields of papers citing papers by Wei Guo

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Wei Guo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Wei Guo. The network helps show where Wei Guo may publish in the future.

Co-authorship network of co-authors of Wei Guo

This figure shows the co-authorship network connecting the top 25 collaborators of Wei Guo. A scholar is included among the top collaborators of Wei Guo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Wei Guo. Wei Guo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chen, Cong, Qiushuang Chen, Chenglong Xu, et al.. (2025). Influence of growth rate on epitaxy of high-Al-content AlGaN via metal−organic chemical vapor deposition. Journal of Alloys and Compounds. 1013. 178597–178597.
2.
Li, Nian, Wei Guo, Zheng Zhang, et al.. (2025). Encapsulation of SiO 2 Nanofibers with Air Interlayer and SiC Shell for High Temperature Thermal Insulating Aerogels. Small. 21(36). e04690–e04690.
3.
Xia, Shihong, et al.. (2023). Self-powered MSM solar-blind AlGaN photodetector realized by in-plane polarization modulation. Optics Letters. 48(18). 4769–4769. 9 indexed citations
4.
Chen, Cong, et al.. (2023). 193 nm laser annealing on p-GaN with enhanced hole concentration and wall-plug-efficiency in deep ultraviolet LED. Applied Physics Letters. 123(18). 1 indexed citations
5.
Xia, Shihong, et al.. (2023). A distinctive architecture design of lateral p–n type GaN ultraviolet photodetectors via a numerical simulation. Journal of Physics D Applied Physics. 56(34). 345105–345105. 1 indexed citations
6.
Chen, Li, Qiushuang Chen, Biao Zhou, et al.. (2022). Implementation of electron restriction layer in n-AlGaN toward balanced carrier distribution in deep ultraviolet light-emitting-diodes. Applied Physics Letters. 121(24). 5 indexed citations
7.
Zhao, Yongming, Qiushuang Chen, Wei Guo, et al.. (2022). Nanoporous AlGaN Distributed Bragg Reflectors for Deep Ultraviolet Emission. ACS Applied Nano Materials. 5(7). 10081–10089. 9 indexed citations
8.
Guo, Wei, Li Chen, Houqiang Xu, et al.. (2022). Polarization modulation of 2DEG toward plasma-damage-free GaN HEMT isolation. Applied Physics Letters. 121(1). 9 indexed citations
9.
Xu, Houqiang, Li Chen, Long Yan, et al.. (2021). Direct demonstration of carrier distribution and recombination within step-bunched UV-LEDs. Photonics Research. 9(5). 764–764. 6 indexed citations
10.
Zhang, Yi, Ming Tian, Yongming Zhao, et al.. (2021). Transverse Electric Lasing at a Record Short Wavelength 244.63 nm from GaN Quantum Wells with Weak Exciton Localization. ACS Photonics. 8(5). 1264–1270. 5 indexed citations
11.
Jia, Hongfeng, Huabin Yu, Yang Kang, et al.. (2021). Investigation of quantum structure in N-polar deep-ultraviolet light-emitting diodes. Journal of Applied Physics. 129(13). 10 indexed citations
12.
Guo, Wei, Houqiang Xu, Li Chen, et al.. (2020). Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: progress and prospects. Journal of Physics D Applied Physics. 53(48). 483002–483002. 17 indexed citations
13.
Kang, Yang, Huabin Yu, Zhongjie Ren, et al.. (2020). Efficiency Droop Suppression and Light Output Power Enhancement of Deep Ultraviolet Light-Emitting Diode by Incorporating Inverted-V-Shaped Quantum Barriers. IEEE Transactions on Electron Devices. 67(11). 4958–4962. 13 indexed citations
14.
Guo, Wei, Li Chen, Houqiang Xu, et al.. (2020). Revealing the surface electronic structures of AlGaN deep-ultraviolet multiple quantum wells with lateral polarity domains. Photonics Research. 8(6). 812–812. 2 indexed citations
15.
Xu, Houqiang, Hanling Long, Liang Li, et al.. (2019). Strain modulated nanostructure patterned AlGaN-based deep ultraviolet multiple-quantum-wells for polarization control and light extraction efficiency enhancement. Nanotechnology. 30(43). 435202–435202. 15 indexed citations
16.
Guo, Wei, Somak Mitra, Houqiang Xu, et al.. (2019). Three-dimensional band diagram in lateral polarity junction III-nitride heterostructures. Optica. 6(8). 1058–1058. 13 indexed citations
17.
Sun, Haiding, Somak Mitra, Ram Chandra Subedi, et al.. (2019). Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate. Advanced Functional Materials. 29(48). 154 indexed citations
18.
Xu, Houqiang, Liang Li, Zhenhai Yang, et al.. (2019). Omnidirectional whispering-gallery-mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate. Optics Express. 27(11). 16195–16195. 9 indexed citations
19.
Zhang, Yi, Binh Tinh Tran, Hanling Long, et al.. (2019). Deep UV Laser at 249 nm Based on GaN Quantum Wells. ACS Photonics. 6(10). 2387–2391. 19 indexed citations
20.
Li, Junmei, Fanping Meng, Hongwei Li, et al.. (2017). Polarity Control of GaN and Realization of GaN Schottky Barrier Diode Based on Lateral Polarity Structure. IEEE Transactions on Electron Devices. 64(11). 4424–4429. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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