P. Prajoon

774 total citations
39 papers, 606 citations indexed

About

P. Prajoon is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, P. Prajoon has authored 39 papers receiving a total of 606 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 25 papers in Condensed Matter Physics and 14 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in P. Prajoon's work include GaN-based semiconductor devices and materials (25 papers), Silicon Carbide Semiconductor Technologies (15 papers) and Semiconductor materials and devices (15 papers). P. Prajoon is often cited by papers focused on GaN-based semiconductor devices and materials (25 papers), Silicon Carbide Semiconductor Technologies (15 papers) and Semiconductor materials and devices (15 papers). P. Prajoon collaborates with scholars based in India. P. Prajoon's co-authors include D. Nirmal, J. Ajayan, J. Charles Pravin, L. Arivazhagan, P. Mohankumar, T. Ravichandran, A.S. Augustine Fletcher, M. Manikandan, A. Ramesh Babu and D. J. Godfrey and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Sensors Journal and Journal of Electronic Materials.

In The Last Decade

P. Prajoon

38 papers receiving 568 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Prajoon India 14 483 297 150 125 106 39 606
Andrew Gerger United States 14 454 0.9× 115 0.4× 182 1.2× 101 0.8× 139 1.3× 58 531
Nobumitsu Hirose Japan 13 350 0.7× 171 0.6× 170 1.1× 121 1.0× 103 1.0× 49 450
Lorenzo Lugani Switzerland 13 274 0.6× 268 0.9× 136 0.9× 140 1.1× 101 1.0× 21 404
Yang Lu China 14 398 0.8× 415 1.4× 121 0.8× 169 1.4× 86 0.8× 65 530
Tomislav Suligoj Croatia 15 651 1.3× 111 0.4× 161 1.1× 56 0.4× 252 2.4× 126 839
A. Alian Belgium 18 886 1.8× 263 0.9× 202 1.3× 86 0.7× 127 1.2× 86 946
Yue Tang China 9 134 0.3× 232 0.8× 145 1.0× 100 0.8× 178 1.7× 19 441
Mirko Rocci Italy 12 150 0.3× 172 0.6× 238 1.6× 61 0.5× 132 1.2× 19 403
S. Rennesson France 11 270 0.6× 302 1.0× 146 1.0× 141 1.1× 161 1.5× 28 457
Brian M. McSkimming United States 13 316 0.7× 320 1.1× 153 1.0× 201 1.6× 147 1.4× 24 481

Countries citing papers authored by P. Prajoon

Since Specialization
Citations

This map shows the geographic impact of P. Prajoon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Prajoon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Prajoon more than expected).

Fields of papers citing papers by P. Prajoon

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Prajoon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Prajoon. The network helps show where P. Prajoon may publish in the future.

Co-authorship network of co-authors of P. Prajoon

This figure shows the co-authorship network connecting the top 25 collaborators of P. Prajoon. A scholar is included among the top collaborators of P. Prajoon based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Prajoon. P. Prajoon is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Prajoon, P., et al.. (2024). Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone. Microelectronics Journal. 147. 106158–106158. 5 indexed citations
2.
Mohan, Bishav, J. Charles Pravin, Murugan Keerthi, & P. Prajoon. (2024). Analyzing Ga-Polar and N-Polar GaN HEMTs: A Comparative Study for High-Power DC Performance in Semiconductor Applications. 317–321.
3.
Prajoon, P., et al.. (2023). Investigation of variable field plate length in GaN HEMT on SiC substrate for MMIC applications. Microelectronics Journal. 138. 105866–105866. 5 indexed citations
4.
Nirmal, D., et al.. (2022). InGaAs based gratings for UV–VIS spectrometer in prospective mRNA vaccine research. Optical and Quantum Electronics. 54(9). 555–555. 3 indexed citations
5.
Manikandan, M., et al.. (2022). Physics based modeling of AlGaN/BGaN quantum well based ultra violet light emitting diodes. Optical and Quantum Electronics. 54(3). 4 indexed citations
6.
Manikandan, M., et al.. (2020). Luminous power improvement in InGaN V-Shaped Quantum Well LED using CSG on SiC Substrate. IOP Conference Series Materials Science and Engineering. 906(1). 12011–12011. 5 indexed citations
7.
Arivazhagan, L., D. Nirmal, J. Ajayan, et al.. (2020). A Numerical Investigation of Heat Suppression in HEMT for Power Electronics Application. Silicon. 13(9). 3039–3046. 8 indexed citations
8.
Pravin, J. Charles, et al.. (2020). CSI based Analytical Model for evaluation of DC Characteristics in AlGaN/GaN/AlInN MOS-HEMT using high-k dielectrics. 2020 4th International Conference on Electronics, Communication and Aerospace Technology (ICECA). 471–478. 3 indexed citations
9.
Pravin, J. Charles, et al.. (2020). Impact of AlInN Back-Barrier Over AlGaN/GaN MOS-HEMT With HfO₂ Dielectric Using Cubic Spline Interpolation Technique. IEEE Transactions on Electron Devices. 67(9). 3558–3563. 20 indexed citations
10.
Arivazhagan, L., D. Nirmal, D. J. Godfrey, et al.. (2019). Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications. AEU - International Journal of Electronics and Communications. 108. 189–194. 33 indexed citations
11.
Manikandan, M., D. Nirmal, J. Ajayan, et al.. (2019). A review of blue light emitting diodes for future solid state lighting and visible light communication applications. Superlattices and Microstructures. 136. 106294–106294. 24 indexed citations
12.
Ajayan, J., T. Ravichandran, P. Mohankumar, et al.. (2018). Investigation of RF and DC Performance of E-Mode In0.80Ga0.20As/InAs/In0.80Ga0.20as Channel based DG-HEMTs for Future Submillimetre Wave and THz Applications. IETE Journal of Research. 67(3). 366–376. 3 indexed citations
13.
Prajoon, P., et al.. (2018). Analysis of High Efficiency InGaN Multiple-Quantum-Well Light-Emitting-Diodes Using InGaN Step-Graded Barriers. Journal of Nanoelectronics and Optoelectronics. 13(6). 939–943. 3 indexed citations
14.
Ajayan, J., T. Ravichandran, P. Mohankumar, et al.. (2018). Investigation of DC and RF Performance of Novel MOSHEMT on Silicon Substrate for Future Submillimetre Wave Applications. Semiconductors. 52(16). 1991–1997. 5 indexed citations
15.
Pravin, J. Charles, et al.. (2017). Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor. Superlattices and Microstructures. 104. 470–476. 23 indexed citations
16.
Ajayan, J., T. Ravichandran, P. Prajoon, J. Charles Pravin, & D. Nirmal. (2017). Investigation of breakdown performance in $$L_{g}$$ L g = 20 nm novel asymmetric InP HEMTs for future high-speed high-power applications. Journal of Computational Electronics. 17(1). 265–272. 19 indexed citations
17.
Ajayan, J., D. Nirmal, P. Prajoon, & J. Charles Pravin. (2017). Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications. AEU - International Journal of Electronics and Communications. 79. 151–157. 63 indexed citations
18.
Nirmal, D., et al.. (2016). Green InGaN/GaN LEDs with p-GaN interlayer for efficiency droop improvement. 216–219. 2 indexed citations
19.
Pravin, J. Charles, et al.. (2016). A New Drain Current Model for a Dual Metal Junctionless Transistor for Enhanced Digital Circuit Performance. IEEE Transactions on Electron Devices. 63(9). 3782–3789. 27 indexed citations
20.
Prajoon, P., et al.. (2016). Temperature-dependent efficiency droop analysis of InGaN MQW light-emitting diode with modified ABC model. Journal of Computational Electronics. 15(4). 1511–1520. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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