R. W. Streater

477 total citations
31 papers, 359 citations indexed

About

R. W. Streater is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Surfaces, Coatings and Films. According to data from OpenAlex, R. W. Streater has authored 31 papers receiving a total of 359 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 23 papers in Atomic and Molecular Physics, and Optics and 9 papers in Surfaces, Coatings and Films. Recurrent topics in R. W. Streater's work include Semiconductor materials and devices (17 papers), Semiconductor Quantum Structures and Devices (16 papers) and Electron and X-Ray Spectroscopy Techniques (9 papers). R. W. Streater is often cited by papers focused on Semiconductor materials and devices (17 papers), Semiconductor Quantum Structures and Devices (16 papers) and Electron and X-Ray Spectroscopy Techniques (9 papers). R. W. Streater collaborates with scholars based in Canada, United States and Israel. R. W. Streater's co-authors include A. J. SpringThorpe, Z. R. Wasilewski, D. J. Lockwood, M. Dion, Philip J. Poole, St. J. Dixon-Warren, D.C. Frost, G. Hillier, K. L. Kavanagh and A. J. SpringThorpe and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

R. W. Streater

31 papers receiving 343 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
R. W. Streater Canada	12	250	250	105	78	42	31	359
J. H. Dinan United States	10	190 0.8×	262 1.0×	132 1.3×	52 0.7×	48 1.1×	21	357
Z. Liliental United States	8	192 0.8×	411 1.6×	124 1.2×	83 1.1×	50 1.2×	17	525
S. L. Skala United States	8	302 1.2×	157 0.6×	99 0.9×	80 1.0×	40 1.0×	17	371
A. Savage United States	7	308 1.2×	292 1.2×	153 1.5×	42 0.5×	29 0.7×	8	412
E. Koppensteiner Austria	13	294 1.2×	276 1.1×	191 1.8×	71 0.9×	38 0.9×	27	458
F. Voillot France	14	344 1.4×	288 1.2×	189 1.8×	38 0.5×	40 1.0×	36	453
Marian A. Herman Poland	6	166 0.7×	177 0.7×	185 1.8×	58 0.7×	22 0.5×	10	349
G. W. Anderson Canada	12	282 1.1×	160 0.6×	108 1.0×	45 0.6×	61 1.5×	18	352
J. P. Salerno United States	13	420 1.7×	394 1.6×	92 0.9×	56 0.7×	28 0.7×	31	528
C. Domke Germany	12	366 1.5×	291 1.2×	127 1.2×	59 0.8×	28 0.7×	15	479

Countries citing papers authored by R. W. Streater

Since Specialization

Citations

This map shows the geographic impact of R. W. Streater's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. W. Streater with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. W. Streater more than expected).

Fields of papers citing papers by R. W. Streater

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. W. Streater. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. W. Streater. The network helps show where R. W. Streater may publish in the future.

Co-authorship network of co-authors of R. W. Streater

This figure shows the co-authorship network connecting the top 25 collaborators of R. W. Streater. A scholar is included among the top collaborators of R. W. Streater based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. W. Streater. R. W. Streater is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Lu, Ryan, K. L. Kavanagh, St. J. Dixon-Warren, et al.. (2002). Scanning spreading resistance microscopy current transport studies on doped III–V semiconductors. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 20(4). 1682–1689. 26 indexed citations

Lu, Ryan, K. L. Kavanagh, St. J. Dixon-Warren, et al.. (2001). Calibrated scanning spreading resistance microscopy profiling of carriers in III–V structures. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 19(4). 1662–1670. 26 indexed citations

Arès, Richard, et al.. (2001). Effect of growth rate on surface morphology of heavily carbon-doped InGaAs. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 19(4). 1550–1553. 3 indexed citations

Najda, Stephen P., A.H. Kean, R. W. Streater, & A. J. SpringThorpe. (2000). SIMS measurements of oxygen impurities in AlGaInP semiconductor material and laser diodes. Journal of Crystal Growth. 220(3). 226–230. 4 indexed citations

Robinson, B. J., Lixiang Yuan, D. A. Thompson, Scott A. McMaster, & R. W. Streater. (2000). Optical quality of InGaAsN/GaAs. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4078. 18–18. 2 indexed citations

Lubyshev, D., P. Specht, Rui Zhao, et al.. (2000). Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr4. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(3). 1594–1597. 12 indexed citations

Cai, Wangfeng, D. Lubyshev, D. L. Miller, R. W. Streater, & A. J. SpringThorpe. (1999). Heavily carbon-doped In0.53Ga0.47As on InP (001) substrate grown by solid source molecular beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(3). 1190–1194. 1 indexed citations

Lubyshev, D., M. Micovic, Wangfeng Cai, et al.. (1999). A comparative study of carbon incorporation in heavily doped GaAs and Al0.3Ga0.7As grown by solid-source molecular beam epitaxy using carbon tetrabromide. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(3). 1180–1184. 8 indexed citations

Micovic, M., Christopher Nordquist, D. Lubyshev, et al.. (1998). GaAs/AlGaAs heterojunction bipolar transistors with a base doping 1020 cm−3 grown by solid-source molecular beam epitaxy using CBr4. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(3). 972–976. 3 indexed citations

10.

Beaudoin, M., U. Giesen, I. Kelson, et al.. (1997). In situ thickness measurements in molecular beam epitaxy using alpha particle energy loss. Surface and Coatings Technology. 94-95. 374–378. 6 indexed citations

11.

Wasilewski, Z. R., M. Dion, D. J. Lockwood, et al.. (1997). Determination of Al Ga(1 − )As composition: the MBE perspective. Journal of Crystal Growth. 175-176. 238–243. 3 indexed citations

12.

Johnson, S. R., et al.. (1997). Semiconductor substrate cleaning and surface morphology in molecular beam epitaxy. Surface Science. 374(1-3). 418–426. 10 indexed citations

13.

Bassignana, I. C., et al.. (1997). Variation in the lattice parameter and crystal quality of commercially available Si-doped GaAs substrates. Journal of Crystal Growth. 178(4). 445–458. 9 indexed citations

14.

Wasilewski, Z. R., M. Dion, D. J. Lockwood, et al.. (1997). Composition of AlGaAs. Journal of Applied Physics. 81(4). 1683–1694. 73 indexed citations

15.

Bassignana, I. C., et al.. (1997). Setting limits on the accuracy of X-ray determination of Al concentration in epitaxial layers. Journal of Crystal Growth. 172(1-2). 25–36. 18 indexed citations

16.

Lavoie, C., et al.. (1996). Indium-induced smoothing of GaAs films during MBE growth. Canadian Journal of Physics. 74(S1). 49–53. 5 indexed citations

17.

Thompson, Dylan, et al.. (1993). Application of an in situ hydrogen plasma to the epitaxial regrowth of InP grown by molecular beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 11(3). 985–988. 5 indexed citations

18.

Long, J.R., et al.. (1981). The optimization of metal—Insulator—Metal nonlinear devices for use in multiplexed liquid crystal displays. IEEE Transactions on Electron Devices. 28(6). 736–739. 17 indexed citations

19.

Long, J.R., et al.. (1980). A 68 line multiplexed liquid crystal display using metal-insulator-metal (MIM) devices. 707–710. 1 indexed citations

20.

Streater, R. W., et al.. (1977). Low energy electron diffraction intensities from the (311) surface of copper. Solid State Communications. 24(2). 139–141. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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