J. Giess

616 total citations
45 papers, 482 citations indexed

About

J. Giess is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. Giess has authored 45 papers receiving a total of 482 indexed citations (citations by other indexed papers that have themselves been cited), including 45 papers in Electrical and Electronic Engineering, 28 papers in Atomic and Molecular Physics, and Optics and 10 papers in Materials Chemistry. Recurrent topics in J. Giess's work include Advanced Semiconductor Detectors and Materials (45 papers), Chalcogenide Semiconductor Thin Films (26 papers) and Semiconductor Quantum Structures and Devices (24 papers). J. Giess is often cited by papers focused on Advanced Semiconductor Detectors and Materials (45 papers), Chalcogenide Semiconductor Thin Films (26 papers) and Semiconductor Quantum Structures and Devices (24 papers). J. Giess collaborates with scholars based in United Kingdom, United States and Sweden. J. Giess's co-authors include S.J.C. Irvine, J.B. Mullin, A. Royle, G. W. Blackmore, Janet E. Hails, Neil T. Gordon, O. D. Dosser, David J. Cole‐Hamilton, A.M. Keir and Andrew Graham and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

J. Giess

43 papers receiving 448 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Giess United Kingdom 13 418 263 161 41 27 45 482
B.C. Easton United Kingdom 12 444 1.1× 203 0.8× 234 1.5× 24 0.6× 9 0.3× 20 477
Janet E. Hails United Kingdom 13 379 0.9× 213 0.8× 228 1.4× 32 0.8× 29 1.1× 49 481
R. Korenstein United States 13 290 0.7× 142 0.5× 177 1.1× 29 0.7× 10 0.4× 22 363
Pok‐Kai Liao United States 9 271 0.6× 158 0.6× 116 0.7× 28 0.7× 9 0.3× 16 340
I. G. Gale United Kingdom 11 362 0.9× 106 0.4× 180 1.1× 39 1.0× 10 0.4× 30 413
Takao Wada Japan 15 500 1.2× 318 1.2× 127 0.8× 51 1.2× 23 0.9× 94 611
A. Royle United Kingdom 11 337 0.8× 259 1.0× 137 0.9× 19 0.5× 6 0.2× 18 387
Shin Mou United States 10 283 0.7× 231 0.9× 107 0.7× 45 1.1× 21 0.8× 26 347
G. W. Blackmore United Kingdom 16 577 1.4× 333 1.3× 287 1.8× 55 1.3× 9 0.3× 49 677
Yuki Miyazawa Japan 13 145 0.3× 134 0.5× 218 1.4× 32 0.8× 14 0.5× 30 412

Countries citing papers authored by J. Giess

Since Specialization
Citations

This map shows the geographic impact of J. Giess's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Giess with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Giess more than expected).

Fields of papers citing papers by J. Giess

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Giess. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Giess. The network helps show where J. Giess may publish in the future.

Co-authorship network of co-authors of J. Giess

This figure shows the co-authorship network connecting the top 25 collaborators of J. Giess. A scholar is included among the top collaborators of J. Giess based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Giess. J. Giess is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Edwards, James W., J. Giess, Andrew Graham, et al.. (2008). Dual waveband MW/LW focal plane arrays grown by MOVPE on silicon substrates. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6940. 69402Q–69402Q. 1 indexed citations
2.
Edwards, James W., J. Giess, Andrew Graham, et al.. (2008). A high-speed, MWIR reference source for FPA non-uniformity correction using negative luminescence. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6940. 69402J–69402J. 1 indexed citations
3.
4.
Hall, David, L. Buckle, Neil T. Gordon, et al.. (2004). High-performance long-wavelength HgCdTe infrared detectors grownon silicon substrates. Applied Physics Letters. 85(11). 2113–2115. 21 indexed citations
5.
Nash, G. R., J. R. Lindle, Neil T. Gordon, et al.. (2003). Long wavelength infrared negative luminescent devices with strong Auger suppression. Journal of Applied Physics. 94(11). 7300–7304. 6 indexed citations
6.
Hails, Janet E., David J. Cole‐Hamilton, & J. Giess. (1998). The origin of hillocks in (Hg, Cd)Te grown by MOVPE. Journal of Electronic Materials. 27(6). 624–633. 4 indexed citations
7.
Jones, I.P., et al.. (1996). Precipitation and migration of point defects in MOCVD Cd Hg1 − Te. Journal of Crystal Growth. 159(1-4). 1096–1099. 2 indexed citations
8.
Cheng, T. T., Mark Aindow, I.P. Jones, et al.. (1994). Influence of Substrate Preparation on the Two-Stage MOCVD of CdTe on (001)GaAs. MRS Proceedings. 340. 1 indexed citations
9.
10.
Young, M. L. & J. Giess. (1991). Room-temperature stability of the electrical properties of metalorganic vapor phase epitaxial Hg1−xCdxTe on GaAs. Journal of Applied Physics. 69(10). 7173–7177. 8 indexed citations
11.
Keir, A.M., Anthony Graham, S. J. Barnett, et al.. (1990). High resolution X-ray diffraction studies of CdxHg1-xTe/CdTe epitaxial layers grown by MOVPE on GaAs substrates. Journal of Crystal Growth. 101(1-4). 572–578. 15 indexed citations
12.
Mullin, J.B., et al.. (1990). MOVPE of narrow and wide gap II–VI compounds. Journal of Crystal Growth. 101(1-4). 1–13. 28 indexed citations
13.
Mullin, J.B., et al.. (1989). The Scope Of MOVPE For Advanced IR CMT Detectors. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1106. 17–17. 7 indexed citations
14.
Blackmore, G. W., et al.. (1989). Analysis of epitaxial Cd x Hg 1 − x Te layers using RBS, SIMS and EER. Surface and Interface Analysis. 14(11). 717–724. 1 indexed citations
15.
Giess, J., et al.. (1986). Orientation Effects on the Heteroepitaxial Growth of CdxHg1−xTe on to CdTe and GaAs. MRS Proceedings. 90. 17 indexed citations
16.
Irvine, S.J.C., J. Giess, G. W. Blackmore, et al.. (1986). The potential for abrupt interfaces in CdxHg1−xTe using thermal and photo-MOVPE. Journal of Crystal Growth. 77(1-3). 437–451. 23 indexed citations
17.
Mullin, J.B., et al.. (1986). Interdiffused Multilayer Processing (IMP) in Alloy Growth. MRS Proceedings. 90. 5 indexed citations
18.
Mullin, J.B., et al.. (1986). On the electrical properties and Hall effect behaviour of MOVPE CdxHg1−xTe. Journal of Crystal Growth. 77(1-3). 460–467. 9 indexed citations
19.
Irvine, S.J.C., J. Giess, J.B. Mullin, G. W. Blackmore, & O. D. Dosser. (1985). Photo-metal organic vapor phase epitaxy: A low temperature method for the growth of CdxHg1−xTe. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 3(5). 1450–1455. 33 indexed citations
20.
Mullin, J.B., S.J.C. Irvine, J. Giess, & A. Royle. (1985). Recent developments in the MOVPE of II–VI compounds. Journal of Crystal Growth. 72(1-2). 1–12. 44 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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