A. D. Johnson

2.0k total citations
51 papers, 1.6k citations indexed

About

A. D. Johnson is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, A. D. Johnson has authored 51 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Electrical and Electronic Engineering, 33 papers in Atomic and Molecular Physics, and Optics and 10 papers in Materials Chemistry. Recurrent topics in A. D. Johnson's work include Semiconductor Quantum Structures and Devices (24 papers), Advanced Semiconductor Detectors and Materials (13 papers) and Advanced Chemical Physics Studies (9 papers). A. D. Johnson is often cited by papers focused on Semiconductor Quantum Structures and Devices (24 papers), Advanced Semiconductor Detectors and Materials (13 papers) and Advanced Chemical Physics Studies (9 papers). A. D. Johnson collaborates with scholars based in United Kingdom, United States and Singapore. A. D. Johnson's co-authors include S. T. Ceyer, J. D. Beckerle, Qian Yang, Kevin J. Maynard, Qingyun Yang, A. L. Utz, G.J. Pryce, C.T. Elliott, T. Ashley and D. E. Ibbotson and has published in prestigious journals such as Science, Journal of the American Chemical Society and Physical Review Letters.

In The Last Decade

A. D. Johnson

50 papers receiving 1.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. D. Johnson United Kingdom 20 1.0k 664 646 266 173 51 1.6k
J.J.C. Geerlings Netherlands 18 854 0.8× 553 0.8× 216 0.3× 368 1.4× 62 0.4× 29 1.5k
H. Froitzheim Germany 19 916 0.9× 613 0.9× 518 0.8× 160 0.6× 118 0.7× 33 1.3k
Xianwei Sha United States 22 701 0.7× 1.1k 1.7× 309 0.5× 117 0.4× 104 0.6× 30 1.8k
R. H. Stulen United States 19 818 0.8× 922 1.4× 538 0.8× 107 0.4× 148 0.9× 69 1.7k
C.M. Comrie South Africa 19 938 0.9× 820 1.2× 536 0.8× 326 1.2× 192 1.1× 71 1.5k
D. A. Mantell United States 17 777 0.8× 420 0.6× 263 0.4× 93 0.3× 145 0.8× 39 1.1k
D. L. Doering United States 18 780 0.8× 505 0.8× 251 0.4× 102 0.4× 264 1.5× 34 1.2k
G. G. Kleiman Brazil 24 1.2k 1.2× 532 0.8× 414 0.6× 81 0.3× 138 0.8× 99 1.7k
Markus Wilde Japan 22 473 0.5× 1.0k 1.6× 417 0.6× 292 1.1× 123 0.7× 95 1.7k
V. Cháb Czechia 25 844 0.8× 1.0k 1.5× 614 1.0× 145 0.5× 174 1.0× 131 1.8k

Countries citing papers authored by A. D. Johnson

Since Specialization
Citations

This map shows the geographic impact of A. D. Johnson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. D. Johnson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. D. Johnson more than expected).

Fields of papers citing papers by A. D. Johnson

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. D. Johnson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. D. Johnson. The network helps show where A. D. Johnson may publish in the future.

Co-authorship network of co-authors of A. D. Johnson

This figure shows the co-authorship network connecting the top 25 collaborators of A. D. Johnson. A scholar is included among the top collaborators of A. D. Johnson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. D. Johnson. A. D. Johnson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Johnson, A. D., et al.. (2023). Impact of thermal oxidation uniformity on 150 mm GaAs- and Ge-substrate VCSELs. Journal of Physics D Applied Physics. 56(15). 154002–154002. 8 indexed citations
2.
Gabás, M., Efraín Ochoa-Martínez, Laura Barrutia, et al.. (2020). Doping effects on the composition, electric and optical properties of MBE-grown 1.1 eV GaNAsSb layers. Semiconductor Science and Technology. 35(11). 115022–115022.
3.
Pearce, Phoebe, et al.. (2017). III-V Multi-Junction Solar Cells Utilising Group IV SiGeSn Alloys as a 1.0 eV Component Sub-Cell. EU PVSEC. 1248–1252. 2 indexed citations
4.
Krier, A., Min Yin, Andrew Marshall, et al.. (2015). Low bandgap mid-infrared thermophotovoltaic arrays based on InAs. Infrared Physics & Technology. 73. 126–129. 17 indexed citations
5.
Murdin, B. N., Andrew J. Lindsay, Eoin P. O’Reilly, et al.. (2001). Auger recombination in long-wavelength infrared InNxSb1−x alloys. Applied Physics Letters. 78(11). 1568–1570. 43 indexed citations
6.
Johnson, A. D., J. Newey, G.J. Pryce, et al.. (1999). InNxSb1−x Light Emitting Diodes Grown by MBE. MRS Proceedings. 607. 6 indexed citations
7.
Whitehouse, C. R., P. J. Parbrook, A.G. Cullis, et al.. (1998). In-situ direct measurement of activation energies for the generation of misfit dislocations in the InGaAs/GaAs (001) system. Applied Surface Science. 123-124. 718–724. 15 indexed citations
9.
Ashley, T., C.T. Elliott, Neil T. Gordon, et al.. (1996). Room temperature narrow gap semiconductor diodes as sources and detectors in the 5–10 μm wavelength region. Journal of Crystal Growth. 159(1-4). 1100–1103. 19 indexed citations
10.
Whitehouse, C. R., A.G. Cullis, S. J. Barnett, et al.. (1995). In-situ X-ray imaging of III–V strained-layer relaxation processes. Journal of Crystal Growth. 150. 85–91. 27 indexed citations
11.
Ashley, T., C.T. Elliott, Neil T. Gordon, et al.. (1995). Negative luminescence from In1−xAlxSb and CdxHg1−xTe diodes. Infrared Physics & Technology. 36(7). 1037–1044. 39 indexed citations
12.
Yang, Qingyun, Kevin J. Maynard, A. D. Johnson, & S. T. Ceyer. (1995). The structure and chemistry of CH3 and CH radicals adsorbed on Ni(111). The Journal of Chemical Physics. 102(19). 7734–7749. 108 indexed citations
13.
Clark, S. A., et al.. (1995). Antimony capping and decapping of InAlSb(100). Surface Science. 336(1-2). 193–198. 6 indexed citations
14.
Barnett, S. J., C. R. Whitehouse, A.M. Keir, et al.. (1993). X-ray topography of lattice relaxation in strained layer semiconductors: post-growth studies and a new facility for in situ topography during MBE growth. Journal of Physics D Applied Physics. 26(4A). A45–A49. 9 indexed citations
15.
Johnson, A. D., J. Perrin, J. A. Mucha, & D. E. Ibbotson. (1992). Chemical Vapor Deposition of SiC from Silacyclobutane and Methylsilane. MRS Proceedings. 282. 3 indexed citations
16.
Johnson, A. D., J.W.M. Frenken, J. F. van der Veen, et al.. (1990). Combined deconstruction and roughening of Ge(001) studied with surface x-ray diffraction. Physical Review Letters. 1 indexed citations
17.
Beckerle, J. D., A. D. Johnson, & S. T. Ceyer. (1990). Collision-induced desorption of physisorbed CH4 from Ni(111): Experiments and simulations. The Journal of Chemical Physics. 93(6). 4047–4065. 71 indexed citations
18.
Fletcher, G. D., R.P. Ferrier, & A. D. Johnson. (1990). Intersatellite coherent optical communications. 1 indexed citations
19.
Beckerle, J. D., A. D. Johnson, & S. T. Ceyer. (1989). Observation and Mechanism of Collision-Induced Desorption: CH4on Ni(111). Physical Review Letters. 62(6). 685–688. 80 indexed citations
20.
Beckerle, J. D., A. D. Johnson, Qian Yang, & S. T. Ceyer. (1988). Summary Abstract: Collision induced dissociation and desorption: CH4 and CO on Ni (111). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 6(3). 903–904. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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