A. J. Pidduck

1.5k total citations
46 papers, 1.3k citations indexed

About

A. J. Pidduck is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, A. J. Pidduck has authored 46 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 21 papers in Atomic and Molecular Physics, and Optics and 11 papers in Materials Chemistry. Recurrent topics in A. J. Pidduck's work include Semiconductor materials and devices (15 papers), Silicon and Solar Cell Technologies (12 papers) and Semiconductor Quantum Structures and Devices (12 papers). A. J. Pidduck is often cited by papers focused on Semiconductor materials and devices (15 papers), Silicon and Solar Cell Technologies (12 papers) and Semiconductor Quantum Structures and Devices (12 papers). A. J. Pidduck collaborates with scholars based in United Kingdom, India and Mexico. A. J. Pidduck's co-authors include A. G. Cullis, David Robbins, M. T. Emeny, Wai Yie Leong, David J. Robbins, P. W. Smith, J. L. Glasper, Graham C. Smith, G. P. Bryan‐Brown and C. Pickering and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of The Electrochemical Society.

In The Last Decade

A. J. Pidduck

45 papers receiving 1.2k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author						Papers	Cites
A. J. Pidduck	836	748	334	193	158	46	1.3k
T. Y. Tan	950 1.1×	818 1.1×	438 1.3×	126 0.7×	112 0.7×	47	1.4k
C. Jaussaud	354 0.4×	1.3k 1.7×	351 1.1×	192 1.0×	93 0.6×	68	1.5k
Cock Lodder	532 0.6×	270 0.4×	247 0.7×	220 1.1×	97 0.6×	35	906
M. C. Reuter	1.1k 1.4×	993 1.3×	469 1.4×	248 1.3×	129 0.8×	37	1.6k
J. Angilello	344 0.4×	539 0.7×	419 1.3×	106 0.5×	93 0.6×	33	956
H. Cerva	590 0.7×	994 1.3×	613 1.8×	252 1.3×	125 0.8×	91	1.5k
R. P. Chiarello	447 0.5×	220 0.3×	255 0.8×	138 0.7×	105 0.7×	19	846
Marcia H. Grabow	500 0.6×	284 0.4×	473 1.4×	183 0.9×	101 0.6×	18	982
Jean-Pierre Landesman	538 0.6×	722 1.0×	400 1.2×	115 0.6×	64 0.4×	92	1.1k
V. P. LaBella	874 1.0×	560 0.7×	488 1.5×	114 0.6×	52 0.3×	63	1.1k

Countries citing papers authored by A. J. Pidduck

Since Specialization

Citations

This map shows the geographic impact of A. J. Pidduck's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. J. Pidduck with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. J. Pidduck more than expected).

Fields of papers citing papers by A. J. Pidduck

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. J. Pidduck. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. J. Pidduck. The network helps show where A. J. Pidduck may publish in the future.

Co-authorship network of co-authors of A. J. Pidduck

This figure shows the co-authorship network connecting the top 25 collaborators of A. J. Pidduck. A scholar is included among the top collaborators of A. J. Pidduck based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. J. Pidduck. A. J. Pidduck is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Wright, Nicolas G., et al.. (2001). Effect of Residual Damage on Carrier Transport Properties in a 4H-SiC Double Implanted Bipolar Junction Transistor. Materials science forum. 353-356. 567–570. 2 indexed citations

Grobert, Nicole, Mauricio Terrones, Susana Trasobares, et al.. (2000). A novel route to aligned nanotubes and nanofibres using laser-patterned catalytic substrates. Applied Physics A. 70(2). 175–183. 56 indexed citations

Grobert, Nicole, J. P. Hare, W. K. Hsu, et al.. (1999). ChemInform Abstract: Nanotechnology of Nanotubes and Nanowires: From Aligned Carbon Nanotubes to Silicon Oxide Nanowires. ChemInform. 30(13). 1 indexed citations

Jones, J.C., et al.. (1998). 46.3: The Effect of Surface Structure on the Performance of a Ferroelectric LCD. SID Symposium Digest of Technical Papers. 29(1). 1179–1182. 2 indexed citations

Churchill, A. C., David J. Robbins, D. J. Wallis, et al.. (1998). Two-dimensional electron gas mobility as a function of virtual substrate quality in strained Si/SiGe heterojunctions. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(3). 1634–1638. 24 indexed citations

Pidduck, A. J., et al.. (1997). Control of liquid crystal alignment by polyimide surface modification using atomic force microscopy. Applied Physics Letters. 71(20). 2907–2909. 61 indexed citations

Pidduck, A. J., et al.. (1996). Atomic force microscopy studies of rubbed polyimide surfaces used for liquid crystal alignment. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 14(3). 1723–1728. 53 indexed citations

Cullis, A. G., A. J. Pidduck, & M. T. Emeny. (1996). Growth morphology evolution and dislocation introduction in the heteroepitaxial system. Journal of Crystal Growth. 158(1-2). 15–27. 65 indexed citations

Pidduck, A. J., et al.. (1992). Evolution of surface morphology and strain during SiGe epitaxy. Thin Solid Films. 222(1-2). 78–84. 188 indexed citations

10.

Glasper, J. L., et al.. (1992). Characterisation of heterojunction bipolar transistors incorporating Si/Si1−xGex epitaxial double layers with n+ emitter implants. Microelectronic Engineering. 19(1-4). 447–450. 5 indexed citations

11.

Glasper, J. L., David J. Robbins, & A. J. Pidduck. (1992). Calcium contamination of silicon epitaxy. Semiconductor Science and Technology. 7(4). 452–459.

12.

Cullis, A. G., David Robbins, A. J. Pidduck, & P. W. Smith. (1992). Surface Waves and Strain Modulations in Si_1-xGe_x Alloy Layers on Si. MRS Proceedings. 280. 3 indexed citations

13.

Robbins, David, A. J. Pidduck, J. L. Glasper, Iain M. Young, & C. Pickering. (1989). The measurement of surface boron on silicon wafers annealed in vacuum and gas ambients. Thin Solid Films. 183(1-2). 299–306. 10 indexed citations

14.

Pidduck, A. J., David Robbins, Iain M. Young, & Gnyaneshwari Patel. (1989). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers. Thin Solid Films. 183(1-2). 255–262. 8 indexed citations

15.

Robbins, David J., A. J. Pidduck, J. L. Glasper, & Iain M. Young. (1989). Using a hydrogen ambient to eliminate interfacial boron spikes in reduced temperature silicon epitaxy. Applied Physics Letters. 55(12). 1229–1231. 7 indexed citations

16.

Pidduck, A. J., David J. Robbins, D. B. Gasson, C. Pickering, & J. L. Glasper. (1989). In Situ Laser Light Scattering: II . Relationship to Silicon Surface Topography. Journal of The Electrochemical Society. 136(10). 3088–3094. 15 indexed citations

17.

Robbins, David J., A. J. Pidduck, A. G. Cullis, et al.. (1987). In-situ light scattering studies of substrate cleaning and layer nucleation in silicon MBE. Journal of Crystal Growth. 81(1-4). 421–427. 22 indexed citations

18.

Beale, M.I.J., et al.. (1987). The mechanisms of ion beam modification of PMMA for dry etch development ion beam lithography. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 19-20. 995–1000. 4 indexed citations

19.

Hodge, Andrèa M., et al.. (1985). Silicon Oxidation by Rapid Thermal Processing (RTP). MRS Proceedings. 52. 6 indexed citations

20.

Beale, M.I.J., et al.. (1985). The mechanism of ion implantation passivation of PMMA for lithography with dry etch development. Microelectronic Engineering. 3(1-4). 451–458. 7 indexed citations

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