Timothy D. Sullivan

1.3k total citations
45 papers, 949 citations indexed

About

Timothy D. Sullivan is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Mechanics of Materials. According to data from OpenAlex, Timothy D. Sullivan has authored 45 papers receiving a total of 949 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 27 papers in Electronic, Optical and Magnetic Materials and 7 papers in Mechanics of Materials. Recurrent topics in Timothy D. Sullivan's work include Copper Interconnects and Reliability (27 papers), Electronic Packaging and Soldering Technologies (22 papers) and Semiconductor materials and devices (18 papers). Timothy D. Sullivan is often cited by papers focused on Copper Interconnects and Reliability (27 papers), Electronic Packaging and Soldering Technologies (22 papers) and Semiconductor materials and devices (18 papers). Timothy D. Sullivan collaborates with scholars based in United States, Mexico and Canada. Timothy D. Sullivan's co-authors include Baozhen Li, D. Badami, Kenneth P. Rodbell, K. Y. Lee, C.‐K. Hu, Stewart E. Rauch, James M. Powers, C.-Y. Li, Giuseppe La Rosa and J. Suñé and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Energy Policy.

In The Last Decade

Timothy D. Sullivan

44 papers receiving 907 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Timothy D. Sullivan United States 16 790 511 140 104 90 45 949
H.-U. Schreiber Germany 15 500 0.6× 288 0.6× 67 0.5× 60 0.6× 61 0.7× 48 718
Jin Onuki Japan 14 647 0.8× 284 0.6× 109 0.8× 104 1.0× 33 0.4× 119 789
J.T.M. Stevenson United Kingdom 13 502 0.6× 68 0.1× 75 0.5× 39 0.4× 264 2.9× 93 603
Hayato Iwamoto Japan 15 728 0.9× 103 0.2× 37 0.3× 110 1.1× 146 1.6× 76 796
John Osenbach United States 18 742 0.9× 87 0.2× 75 0.5× 224 2.2× 73 0.8× 70 876
M. Hommel Germany 10 251 0.3× 231 0.5× 333 2.4× 286 2.8× 112 1.2× 18 617
Long Zhang China 18 906 1.1× 68 0.1× 36 0.3× 81 0.8× 55 0.6× 153 1.1k
Vahur Zadin Estonia 15 455 0.6× 123 0.2× 41 0.3× 194 1.9× 124 1.4× 60 660
S. K. Kang United States 23 1.5k 1.9× 111 0.2× 119 0.8× 181 1.7× 62 0.7× 57 1.6k
Ionut Radu France 16 638 0.8× 50 0.1× 56 0.4× 134 1.3× 183 2.0× 75 757

Countries citing papers authored by Timothy D. Sullivan

Since Specialization
Citations

This map shows the geographic impact of Timothy D. Sullivan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Timothy D. Sullivan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Timothy D. Sullivan more than expected).

Fields of papers citing papers by Timothy D. Sullivan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Timothy D. Sullivan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Timothy D. Sullivan. The network helps show where Timothy D. Sullivan may publish in the future.

Co-authorship network of co-authors of Timothy D. Sullivan

This figure shows the co-authorship network connecting the top 25 collaborators of Timothy D. Sullivan. A scholar is included among the top collaborators of Timothy D. Sullivan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Timothy D. Sullivan. Timothy D. Sullivan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sullivan, Timothy D.. (2015). Shifting Strategies of Political Authority in the Middle through Terminal Formative Polity of Chiapa De Corzo, Chiapas, Mexico. Latin American Antiquity. 26(4). 452–472. 5 indexed citations
2.
Adderly, Shawn A., et al.. (2013). The effect of etch residuals on via reliability. 34. 1–5.
3.
Kothandaraman, C., John Safran, John Golz, et al.. (2012). Copper through silicon via (TSV) for 3D integration. 2B.1.1–2B.1.4. 6 indexed citations
4.
Gambino, Jeff, et al.. (2009). Reliability of Copper Interconnects: Stress-Induced Voids. ECS Transactions. 18(1). 205–211. 3 indexed citations
5.
Aubel, Oliver, et al.. (2007). Constant-Current Wafer-Level Electromigration Test: Normalization of Data for Production Monitoring. IEEE Transactions on Device and Materials Reliability. 7(2). 270–277. 3 indexed citations
6.
Li, Baozhen, J. Gill, C. Christiansen, Timothy D. Sullivan, & P. McLaughlin. (2005). Impact of via-line contact on CU interconnect electromigration performance. 24–30. 19 indexed citations
7.
Li, Baozhen, et al.. (2003). Line depletion electromigration characteristics of Cu interconnects. 140–145. 8 indexed citations
8.
Li, Baozhen, et al.. (2003). Reliability challenges for copper interconnects. Microelectronics Reliability. 44(3). 365–380. 204 indexed citations
9.
Sullivan, Timothy D., et al.. (2002). Comparison of isothermal, constant current and SWEAT wafer level EM testing methods. ed 34. 61–69. 6 indexed citations
10.
Sullivan, Timothy D., et al.. (2002). Comparison of via/line package level vs. wafer level results. 194–199. 11 indexed citations
11.
Fen, Chen, et al.. (2000). Influence of underlying interlevel dielectric films on extrusion formation in aluminum interconnects. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(6). 2826–2834. 19 indexed citations
12.
Sullivan, Timothy D.. (1996). Stress-Induced Voiding in Microelectronic Metallization: Void Growth Models and Refinements. Annual Review of Materials Science. 26(1). 333–364. 22 indexed citations
13.
Sullivan, Timothy D., et al.. (1996). Electrical measurement of stress-induced void growth. AIP conference proceedings. 373. 67–80. 1 indexed citations
14.
Korhonen, M. A., et al.. (1994). Statistics of stress migration and electromigration failures of passivated interconnect lines. AIP conference proceedings. 305. 15–32. 3 indexed citations
15.
Sullivan, Timothy D., et al.. (1993). The Effect of Collimation On Sputtered Alcusi and Almg Microstructures And Electromigration Failure Characteristics. MRS Proceedings. 309. 6 indexed citations
16.
Sullivan, Timothy D., et al.. (1993). Stress-Induced Voiding Vs Temperature and Passivation Thickness IN AI-0.5%Cu-2%Si, AI-0.5%Cu AND Al-i%Si. MRS Proceedings. 309. 2 indexed citations
17.
Sullivan, Timothy D., et al.. (1993). Stress-Induced Voiding vs Temperature and Passivation Thickness IN Al-0.5%Cu-2%Si, AI-0.5%Cu AND Al-1%Si. MRS Proceedings. 308. 3 indexed citations
18.
Børgesen, Peter, M. A. Korhonen, Timothy D. Sullivan, D. D. Brown, & C.-Y. Li. (1991). Electromigration Damage by Current Induced Coalescence of Thermal Stress Voids. MRS Proceedings. 239. 9 indexed citations
19.
Sullivan, Timothy D.. (1989). Thermal dependence of voiding in narrow aluminum microelectronic interconnects. Applied Physics Letters. 55(23). 2399–2401. 28 indexed citations
20.
Powers, James M. & Timothy D. Sullivan. (1976). Flexural disk peizoelectric polymer hydrophones. The Journal of the Acoustical Society of America. 60(S1). S47–S47. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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