Jun Tae Jang

1.0k total citations
52 papers, 848 citations indexed

About

Jun Tae Jang is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, Jun Tae Jang has authored 52 papers receiving a total of 848 indexed citations (citations by other indexed papers that have themselves been cited), including 52 papers in Electrical and Electronic Engineering, 23 papers in Materials Chemistry and 11 papers in Polymers and Plastics. Recurrent topics in Jun Tae Jang's work include Thin-Film Transistor Technologies (30 papers), Advanced Memory and Neural Computing (24 papers) and CCD and CMOS Imaging Sensors (12 papers). Jun Tae Jang is often cited by papers focused on Thin-Film Transistor Technologies (30 papers), Advanced Memory and Neural Computing (24 papers) and CCD and CMOS Imaging Sensors (12 papers). Jun Tae Jang collaborates with scholars based in South Korea, United States and China. Jun Tae Jang's co-authors include Dae Hwan Kim, Sung‐Jin Choi, Dong Myong Kim, Hyun‐Suk Kim, Chansoo Yoon, Sangik Lee, Mallory Mativenga, Bae Ho Park, Jozeph Park and Byung Du Ahn and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Scientific Reports.

In The Last Decade

Jun Tae Jang

51 papers receiving 830 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Jun Tae Jang South Korea 19 798 320 183 172 50 52 848
Chi‐Hsin Huang Taiwan 18 887 1.1× 353 1.1× 267 1.5× 263 1.5× 66 1.3× 32 1.0k
Alvaro Padilla United States 10 705 0.9× 330 1.0× 147 0.8× 119 0.7× 52 1.0× 12 755
Subhranu Samanta Singapore 21 947 1.2× 390 1.2× 128 0.7× 163 0.9× 93 1.9× 47 993
Chih‐Cheng Shih Taiwan 20 1.0k 1.3× 295 0.9× 275 1.5× 239 1.4× 41 0.8× 55 1.1k
Congyan Lu China 18 841 1.1× 302 0.9× 162 0.9× 151 0.9× 131 2.6× 63 927
Zhen Luo China 11 628 0.8× 327 1.0× 92 0.5× 120 0.7× 67 1.3× 20 728
Andy Paul Chen Singapore 8 502 0.6× 206 0.6× 125 0.7× 212 1.2× 27 0.5× 14 592
Dea Uk Lee South Korea 10 584 0.7× 268 0.8× 260 1.4× 141 0.8× 74 1.5× 27 666
Feng‐Shou Yang Taiwan 13 606 0.8× 386 1.2× 134 0.7× 134 0.8× 174 3.5× 19 782
Amitesh Kumar India 14 631 0.8× 328 1.0× 140 0.8× 94 0.5× 98 2.0× 61 733

Countries citing papers authored by Jun Tae Jang

Since Specialization
Citations

This map shows the geographic impact of Jun Tae Jang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jun Tae Jang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jun Tae Jang more than expected).

Fields of papers citing papers by Jun Tae Jang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jun Tae Jang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jun Tae Jang. The network helps show where Jun Tae Jang may publish in the future.

Co-authorship network of co-authors of Jun Tae Jang

This figure shows the co-authorship network connecting the top 25 collaborators of Jun Tae Jang. A scholar is included among the top collaborators of Jun Tae Jang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jun Tae Jang. Jun Tae Jang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kim, Wonjung, Jun Tae Jang, Changwook Kim, et al.. (2023). Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor. IEEE Access. 11. 20196–20201. 6 indexed citations
2.
Jang, Jun Tae, Donguk Kim, Jong Uk Bae, et al.. (2022). Cation Composition-Dependent Device Performance and Positive Bias Instability of Self-Aligned Oxide Semiconductor Thin-Film Transistors: Including Oxygen and Hydrogen Effect. ACS Applied Materials & Interfaces. 14(1). 1389–1396. 19 indexed citations
3.
Kim, Donguk, Woo Sik Choi, Jun Tae Jang, et al.. (2022). Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression. Scientific Reports. 12(1). 19380–19380. 12 indexed citations
4.
Kim, Donguk, Jun Tae Jang, Changwook Kim, et al.. (2022). Read Disturbances in Cross-Point Phase-Change Memory Arrays—Part I: Physical Modeling With Phase-Change Dynamics. IEEE Transactions on Electron Devices. 70(2). 514–520. 4 indexed citations
5.
Jang, Jun Tae, Shinyoung Park, Md. Hasan Raza Ansari, et al.. (2021). Threshold-Variation-Tolerant Coupling-Gate α-IGZO Synaptic Transistor for More Reliably Controllable Hardware Neuromorphic System. IEEE Access. 9. 59345–59352. 20 indexed citations
6.
Kim, Donguk, et al.. (2021). A physics-based compact model of phase change for the design of cross-point storage-class memories. Solid-State Electronics. 185. 107955–107955. 3 indexed citations
7.
Jang, Jun Tae, Jong‐Ho Bae, Sung‐Jin Choi, et al.. (2021). Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors. Micromachines. 12(3). 327–327. 18 indexed citations
8.
Kim, Donguk, Jun Tae Jang, Jingyu Park, et al.. (2020). Pd/IGZO/p+-Si Synaptic Device with Self-Graded Oxygen Concentrations for Highly Linear Weight Adjustability and Improved Energy Efficiency. ACS Applied Electronic Materials. 2(8). 2390–2397. 20 indexed citations
9.
Jang, Jun Tae, Donguk Kim, Woo Sik Choi, et al.. (2020). One Transistor–Two Memristor Based on Amorphous Indium–Gallium–Zinc-Oxide for Neuromorphic Synaptic Devices. ACS Applied Electronic Materials. 2(9). 2837–2844. 27 indexed citations
10.
Choi, Sungju, Jun Tae Jang, Jinsu Yoon, et al.. (2019). Implementing an artificial synapse and neuron using a Si nanowire ion-sensitive field-effect transistor and indium-gallium-zinc-oxide memristors. Sensors and Actuators B Chemical. 296. 126616–126616. 12 indexed citations
11.
Jeong, Hwan-Seok, Shinyoung Park, Jun Tae Jang, et al.. (2019). Effect of Simultaneous Mechanical and Electrical Stress on the Electrical Performance of Flexible In-Ga-Zn-O Thin-Film Transistors. Materials. 12(19). 3248–3248. 18 indexed citations
12.
13.
Jang, Jun Tae, et al.. (2018). Degradation on the Current Saturation of Output Characteristics in Amorphous InGaZnO Thin-Film Transistors. IEEE Transactions on Electron Devices. 65(8). 3243–3249. 3 indexed citations
14.
Jang, Jun Tae, Eok Su Kim, Kyoung Seok Son, et al.. (2018). The Influence of Anion Composition on Subgap Density of States and Electrical Characteristics in ZnON Thin-Film Transistors. IEEE Electron Device Letters. 40(1). 40–43. 10 indexed citations
15.
Yoon, Jinsu, Jun Tae Jang, Jieun Lee, et al.. (2018). Hybrid complementary inverter based on carbon nanotube and IGZO thin-film transistors with controlled process conditions. Journal of Alloys and Compounds. 762. 456–462. 14 indexed citations
16.
Jang, Jun Tae, Sung‐Jin Choi, Dong Myong Kim, et al.. (2018). 19‐3: Late-News Paper: Universal Method to Determine the Dynamic NBIS‐ and PBS‐induced Instabilities on Self‐aligned Coplanar InGaZnO Thin‐film Transistors. SID Symposium Digest of Technical Papers. 49(1). 232–235. 2 indexed citations
17.
Yoon, Chansoo, Ji Hye Lee, Sangik Lee, et al.. (2017). Synaptic Plasticity Selectively Activated by Polarization-Dependent Energy-Efficient Ion Migration in an Ultrathin Ferroelectric Tunnel Junction. Nano Letters. 17(3). 1949–1955. 91 indexed citations
18.
Choi, Sungju, Jun Tae Jang, Jinsu Yoon, et al.. (2017). Universal model of bias-stress-induced instability in inkjet-printed carbon nanotube networks field-effect transistors. Solid-State Electronics. 140. 80–85. 6 indexed citations
19.
Kim, Hyung Jun, Hong Zheng, Jong‐Sung Park, et al.. (2017). Artificial synaptic characteristics with strong analog memristive switching in a Pt/CeO2/Pt structure. Nanotechnology. 28(28). 285203–285203. 39 indexed citations
20.
Lee, Jungmin, Hagyoul Bae, Jun Tae Jang, et al.. (2015). Modeling and Separate Extraction Technique for Gate Bias-Dependent Parasitic Resistances and Overlap Length in MOSFETs. IEEE Transactions on Electron Devices. 62(3). 1063–1067. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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