Ph. Hehenberger

702 total citations
12 papers, 556 citations indexed

About

Ph. Hehenberger is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Ph. Hehenberger has authored 12 papers receiving a total of 556 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 3 papers in Materials Chemistry and 2 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Ph. Hehenberger's work include Advancements in Semiconductor Devices and Circuit Design (12 papers), Semiconductor materials and devices (12 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). Ph. Hehenberger is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (12 papers), Semiconductor materials and devices (12 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). Ph. Hehenberger collaborates with scholars based in Austria, Belgium and Germany. Ph. Hehenberger's co-authors include Tibor Grasser, B. Kaczer, Michael Nelhiebel, Th. Aichinger, Wolfgang Goes, H. Reisinger, J. Franco, P.-J. Wagner, Wolfgang Gös and Christian Schlünder and has published in prestigious journals such as Microelectronics Reliability, Microelectronic Engineering and IEEE Transactions on Device and Materials Reliability.

In The Last Decade

Ph. Hehenberger

12 papers receiving 542 citations

Peers

Ph. Hehenberger
N. Revil France
S. Springer United States
S.K.H. Fung United States
Gianluca Boselli United States
A. Ajmera United States
Ph. Hehenberger
Citations per year, relative to Ph. Hehenberger Ph. Hehenberger (= 1×) peers Th. Aichinger

Countries citing papers authored by Ph. Hehenberger

Since Specialization
Citations

This map shows the geographic impact of Ph. Hehenberger's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ph. Hehenberger with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ph. Hehenberger more than expected).

Fields of papers citing papers by Ph. Hehenberger

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ph. Hehenberger. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ph. Hehenberger. The network helps show where Ph. Hehenberger may publish in the future.

Co-authorship network of co-authors of Ph. Hehenberger

This figure shows the co-authorship network connecting the top 25 collaborators of Ph. Hehenberger. A scholar is included among the top collaborators of Ph. Hehenberger based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ph. Hehenberger. Ph. Hehenberger is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

12 of 12 papers shown
1.
Hehenberger, Ph., Wolfgang Goes, O. Baumgartner, et al.. (2011). Quantum-mechanical modeling of NBTI in high-k SiGe MOSFETs. 204. 11–14. 4 indexed citations
2.
Franco, J., B. Kaczer, M. Toledano-Luque, et al.. (2011). On the impact of the Si passivation layer thickness on the NBTI of nanoscaled Si0.45Ge0.55 pMOSFETs. Microelectronic Engineering. 88(7). 1388–1391. 19 indexed citations
3.
Hehenberger, Ph., H. Reisinger, & Tibor Grasser. (2010). Recovery of negative and positive bias temperature stress in pMOSFETs. Zenodo (CERN European Organization for Nuclear Research). 8–11. 9 indexed citations
4.
Grasser, Tibor, B. Kaczer, Wolfgang Goes, et al.. (2010). Recent advances in understanding the bias temperature instability. 4.4.1–4.4.4. 82 indexed citations
5.
Hehenberger, Ph., Th. Aichinger, Tibor Grasser, et al.. (2009). Do NBTI-induced interface states show fast recovery? A study using a corrected on-the-fly charge-pumping measurement technique. 1033–1038. 23 indexed citations
6.
Hehenberger, Ph., P.-J. Wagner, H. Reisinger, & Tibor Grasser. (2009). Comparison of fast measurement methods for short-term negative bias temperature stress and relaxation. 311–314. 1 indexed citations
7.
Hehenberger, Ph., P.-J. Wagner, H. Reisinger, & Tibor Grasser. (2009). On the temperature and voltage dependence of short-term negative bias temperature stress. Microelectronics Reliability. 49(9-11). 1013–1017. 5 indexed citations
8.
Grasser, Tibor, B. Kaczer, Wolfgang Goes, et al.. (2009). A two-stage model for negative bias temperature instability. 170 indexed citations
9.
Grasser, Tibor, H. Reisinger, Wolfgang Goes, et al.. (2009). Switching oxide traps as the missing link between negative bias temperature instability and random telegraph noise. 1–4. 88 indexed citations
10.
Grasser, Tibor, B. Kaczer, Wolfgang Goes, et al.. (2009). Understanding negative bias temperature instability in the context of hole trapping (Invited Paper). Microelectronic Engineering. 86(7-9). 1876–1882. 50 indexed citations
11.
Grasser, Tibor, et al.. (2008). A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability. IEEE Transactions on Device and Materials Reliability. 1–1. 2 indexed citations
12.
Grasser, Tibor, B. Kaczer, Ph. Hehenberger, et al.. (2007). Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability. 801–804. 103 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026