C.J. Deatcher

468 total citations
12 papers, 407 citations indexed

About

C.J. Deatcher is a scholar working on Condensed Matter Physics, Materials Chemistry and Electrical and Electronic Engineering. According to data from OpenAlex, C.J. Deatcher has authored 12 papers receiving a total of 407 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Condensed Matter Physics, 7 papers in Materials Chemistry and 5 papers in Electrical and Electronic Engineering. Recurrent topics in C.J. Deatcher's work include GaN-based semiconductor devices and materials (12 papers), ZnO doping and properties (7 papers) and Ga2O3 and related materials (5 papers). C.J. Deatcher is often cited by papers focused on GaN-based semiconductor devices and materials (12 papers), ZnO doping and properties (7 papers) and Ga2O3 and related materials (5 papers). C.J. Deatcher collaborates with scholars based in United Kingdom, Portugal and United States. C.J. Deatcher's co-authors include I. M. Watson, K.P. O’Donnell, S. Pereira, E. Alves, E. Pereira, M. R. Correia, N. Franco, Adélia Sequeira, Robert Martin and P. R. Edwards and has published in prestigious journals such as Applied Physics Letters, Journal of Physics D Applied Physics and physica status solidi (b).

In The Last Decade

C.J. Deatcher

12 papers receiving 396 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
C.J. Deatcher United Kingdom	10	335	162	152	140	125	12	407
Ravi Shivaraman United States	9	352 1.1×	160 1.0×	215 1.4×	119 0.8×	164 1.3×	12	450
S. Zamir Israel	9	254 0.8×	147 0.9×	80 0.5×	134 1.0×	142 1.1×	22	341
R. C. Tu Taiwan	11	312 0.9×	222 1.4×	179 1.2×	142 1.0×	168 1.3×	30	424
H.-H. Wehmann Germany	15	333 1.0×	302 1.9×	162 1.1×	241 1.7×	226 1.8×	33	568
N. L. Andrew United Kingdom	10	155 0.5×	184 1.1×	207 1.4×	67 0.5×	186 1.5×	17	411
Munehiro Kato Japan	9	447 1.3×	323 2.0×	217 1.4×	176 1.3×	202 1.6×	14	577
T. Boufaden Tunisia	14	514 1.5×	348 2.1×	104 0.7×	303 2.2×	232 1.9×	37	578
M. W. Cho Japan	9	205 0.6×	208 1.3×	108 0.7×	142 1.0×	176 1.4×	25	358
W. Swider United States	14	382 1.1×	295 1.8×	270 1.8×	178 1.3×	388 3.1×	35	662
E. V. Konenkova Russia	10	187 0.6×	99 0.6×	139 0.9×	68 0.5×	198 1.6×	53	355

Countries citing papers authored by C.J. Deatcher

Since Specialization

Citations

This map shows the geographic impact of C.J. Deatcher's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C.J. Deatcher with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C.J. Deatcher more than expected).

Fields of papers citing papers by C.J. Deatcher

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C.J. Deatcher. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C.J. Deatcher. The network helps show where C.J. Deatcher may publish in the future.

Co-authorship network of co-authors of C.J. Deatcher

This figure shows the co-authorship network connecting the top 25 collaborators of C.J. Deatcher. A scholar is included among the top collaborators of C.J. Deatcher based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C.J. Deatcher. C.J. Deatcher is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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12 of 12 papers shown

Yakovlev, E.V., Р.А. Талалаев, Robert Martin, et al.. (2006). Modeling and experimental analysis of InGaN MOVPE in the Aixtron AIX 200/4 RF‐S horizontal reactor. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(6). 1620–1623. 12 indexed citations

Deatcher, C.J., Katarzyna Bejtka, Robert Martin, et al.. (2006). Wavelength-dispersive x-ray microanalysis as a novel method for studying magnesium doping in gallium nitride epitaxial films. Semiconductor Science and Technology. 21(9). 1287–1295. 5 indexed citations

Deatcher, C.J., et al.. (2004). Silicon Doping of Gallium Nitride Using Ditertiarybutylsilane. Chemical Vapor Deposition. 10(4). 187–190. 10 indexed citations

Deatcher, C.J., S. Pereira, A. G. Cullis, et al.. (2003). In situoptical reflectometry applied to growth of indium gallium nitride epilayers and multi-quantum well structures. Semiconductor Science and Technology. 18(4). 212–218. 41 indexed citations

Barradas, N.P., E. Alves, S. Pereira, et al.. (2003). Roughness in GaN/InGaN films and multilayers determined with Rutherford backscattering. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 217(3). 479–497. 30 indexed citations

Pereira, S., E. Pereira, E. Alves, et al.. (2002). Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: The role of intermixing. Applied Physics Letters. 81(16). 2950–2952. 13 indexed citations

White, Mark E., K.P. O’Donnell, Robert Martin, et al.. (2002). Photoluminescence excitation spectroscopy of InGaN epilayers. Materials Science and Engineering B. 93(1-3). 147–149. 11 indexed citations

Pereira, S., M. R. Correia, E. Pereira, et al.. (2002). Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping. Applied Physics Letters. 80(21). 3913–3915. 207 indexed citations

Martin, Robert, et al.. (2002). Light emission ranging from blue to red from a series of InGaN/GaN single quantum wells. Journal of Physics D Applied Physics. 35(7). 604–608. 35 indexed citations

10.

O’Donnell, K.P., Robert Martin, C. Trager‐Cowan, et al.. (2001). The dependence of the optical energies on InGaN composition. Materials Science and Engineering B. 82(1-3). 194–196. 29 indexed citations

11.

Watson, I. M., C. Liu, C.J. Deatcher, et al.. (2001). In situ and ex situ Evaluation of Mechanisms of Lateral Epitaxial Overgrowth. physica status solidi (a). 188(2). 743–746. 9 indexed citations

12.

White, Mark E., K.P. O’Donnell, Robert Martin, et al.. (2001). Photoluminescence Excitation Spectroscopy of MBE Grown InGaN Quantum Wells and Quantum Boxes. physica status solidi (b). 228(1). 129–132. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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