V. E. Haven

852 citations
43 papers · 648 indexed · h-index 16

V. E. Haven

41 papers receiving 604 citations

Peers

V. E. Haven
Comparison fields: 5 of 26
  • Atomic and Molecular Physics, and Optics 443
  • Electrical and Electronic Engineering 566
  • Condensed Matter Physics 49
  • Biomedical Engineering 112
  • Structural Biology 3
Replace M. Frei with:
M. Frei United States
H. Heidemeyer Germany
J. Kątcki Poland
M. W. Dashiell United States
B. Ghyselen France
Germán Kremer Chile
B.F.P. Roos Germany
D. Leong United Kingdom
Vy Yam France
Hiroki Hamada Japan
V. E. Haven relative to M. Frei United States M. Frei's profile →
Citations per field
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M. Frei · 1×
Citations per year

Countries citing papers authored by V. E. Haven

Since Specialization
Citations

This map shows the geographic impact of V. E. Haven's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. E. Haven with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. E. Haven more than expected).

Fields of papers citing papers by V. E. Haven

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. E. Haven. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. E. Haven. The network helps show where V. E. Haven may publish in the future.

Co-authorship network

The 25 scholars most cited alongside V. E. Haven, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with V. E. Haven Line = papers co-authored together V. E. Haven links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown
#Work
1
Chemical Vapor Deposition of Turbine Thermal Barrier Coatings
19991
2 19922
3
Tunnel junctions for InP-on-Si solar cells
19913
4 19903
5 198924
6 19891
7 19892
8 198818
9 198851
10 198829
11 198813
12 198828
13 19886
14
Development of high-efficiency GaAsP solar cells on compositionally graded buffer layers
19878
15
Factors controlling the efficiency of GaAs-on-Si solar cells
19876
16 198725
17 198712
18
Passivation of Si solar cells by hetero-epitaxial compound semiconductor coatings
19861
19 198650
20
MOCVD growth of AlGaAs and GaAs on Ge substrates for high efficiency tandem cell applications
19855

About V. E. Haven

V. E. Haven is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Condensed Matter Physics, Surfaces, Coatings and Films and Computational Mechanics, having authored 43 papers that have together received 648 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (26 papers), solar cell performance optimization (19 papers), Semiconductor materials and interfaces (18 papers), Semiconductor materials and devices (17 papers), Silicon and Solar Cell Technologies (12 papers), Chalcogenide Semiconductor Thin Films (8 papers), Integrated Circuits and Semiconductor Failure Analysis (4 papers) and GaN-based semiconductor devices and materials (4 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (443 citations), Electrical and Electronic Engineering (566 citations), Condensed Matter Physics (49 citations), Biomedical Engineering (112 citations) and Structural Biology (3 citations). V. E. Haven has collaborated with scholars based in United States and France. Frequent co-authors include S. M. Vernon, C.J. Keavney, S. P. Tobin, C. Bajgar, S. J. Pearton, M. B. Spitzer, D.R. Lillington, C. R. Abernathy, Michael Stavola and M. M. Al‐Jassim. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, Journal of Applied Physics, Journal of Electronic Materials and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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