J. Ramdani

1.6k citations

43 papers · 1.3k indexed · h-index 16

Materials Chemistry top 5%
- Electronic and Structural Properties of Oxides 19
- Ferroelectric and Piezoelectric Materials 7
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 27
- Photonic and Optical Devices 7
- Semiconductor Lasers and Optical Devices 7
- Advancements in Semiconductor Devices and Circuit Design 6
- Ferroelectric and Negative Capacitance Devices 5
Electronic, Optical and Magnetic Materials top 10%
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 16
Condensed Matter Physics top 10%

Co-authors: K. Eisenbeiser Zhiyi Yu R. Droopad J. Curless Ravi Droopad J. Finder C. Overgaard Yong Liang
Cited by: Materials Chemistry Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials
Journals: Applied Physics Letters (11 papers)Electronics Letters (3 papers)Journal of Applied Physics (2 papers)
Partner nations: United States France

In The Last Decade

J. Ramdani

39 papers receiving 1.2k citations

Peers

Countries citing papers authored by J. Ramdani

Since Specialization

Citations

This map shows the geographic impact of J. Ramdani's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Ramdani with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Ramdani more than expected).

Fields of papers citing papers by J. Ramdani

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Ramdani. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Ramdani. The network helps show where J. Ramdani may publish in the future.

Co-authorship network

The 25 scholars most cited alongside J. Ramdani, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Ramdani Line = papers co-authored together J. Ramdani links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Schottky barrier at the AlN/metal junction Journal of Applied Physics ·B. Bermejo,J. Ramdani,Alexander A. Demkov	2013	7
2	High-performance carbon nanotube transistors on SrTiO3/Si substrates Applied Physics Letters ·P. Birthwhistle,Todd Brintlinger,Enrique Cobas,Michael S. Fuhrer,Haimei Zheng,Zhiping Yu,Ravi Droopad,J. Ramdani,K. Eisenbeiser	2004	63
3	Parallel optical interconnects using VCSELs 杨征,明富高野,Wenbin Jiang,Taylor Yvette Johnson,C.L. Shieh,Tse Yu Chen,J. Ramdani,Davis H. Hartman,Daniel Schwartz,H Huener,Nisha Shinde -	2002	0
4	Ultraviolet-Raman studies of SrTiO3 ultrathin films on Si Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·J. Breitenbach,Aubrey Stimola,J. Kulik,Hendrik J. T. Hoving,J. Ramdani,Alex Demkov	2002	14
5	Characteristics of VCSEL arrays for parallel optical interconnects 杨征,明富高野,Wenbin Jiang,Taylor Yvette Johnson,C.L. Shieh,Tse Yu Chen,J. Ramdani,Davis H. Hartman,Daniel Schwartz,A Hollenberg	2002	11
6	Development of high dielectric constant epitaxial oxides on silicon by molecular beam epitaxy Materials Science and Engineering B ·Ravi Droopad,Zhiyi Yu,J. Ramdani,MohamedA Abdelhameed,J. Curless,C. Overgaard,J. L. Edwards,J. Finder,K. Eisenbeiser,W. J. Ooms	2001	35
7	Epitaxial oxide thin films on Si(001) Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Zhiyi Yu,J. Ramdani,J. Curless,C. Overgaard,J. Finder,R. Droopad,K. Eisenbeiser,J. A. Hallmark,W. J. Ooms,V. Kaushik	2000	98
8	Optical Properties of Thin-Film SrTiO₃ on Si Grown by MBE MRS Proceedings ·Stefan Zollner,Alex Demkov,Ran Liu,J. Curless,Zhiyi Yu,J. Ramdani,R. Droopad	2000	1
9	Interface characterization of high-quality SrTiO3 thin films on Si(100) substrates grown by molecular beam epitaxy Applied Surface Science ·J. Ramdani,Ravi Droopad,Zhiyi Yu,J. Curless,C. Overgaard,J. Finder,K. Eisenbeiser,J. A. Hallmark,W. J. Ooms,V. Kaushik,F. Matheis,Srinivas V. Pietambaram	2000	33
10	Barium adsorption on Si(100)-(2×1) at room temperature: a bi-polar scanning tunneling microscopy study Surface Science ·Xiaoming Hu,Xiang Yao,S Włoch,Dror Sarid,Zhiyi Yu,Junling Wang,D. S. Marshall,J. Curless,J. Ramdani,Ravi Droopad,J. A. Hallmark,W. J. Ooms	2000	14
11	Band discontinuities at epitaxial SrTiO3/Si(001) heterojunctions Applied Physics Letters ·S. A. Chambers,Yong Liang,Zhiyi Yu,Ravi Droopad,J. Ramdani,K. Eisenbeiser	2000	168
12	Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Zhiyi Yu,J. Ramdani,J. Curless,J. Finder,C. Overgaard,R. Droopad,K. Eisenbeiser,J. A. Hallmark,W. J. Ooms,J. Conner,V. Kaushik	2000	61
13	Properties of Epitaxial SrTiO₃ Thin Films Grown on Silicon by Molecular Beam Epitaxy MRS Proceedings ·Zhiyi Yu,Ravi Droopad,J. Ramdani,J. Curless,C. Overgaard,J. Finder,K. Eisenbeiser,Junling Wang,J. A. Hallmark,W. J. Ooms	1999	24
14	Use of VCSEL arrays for parallel optical interconnects Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·杨征,Hayder Ahmed Hasaan,Wenbin Jiang,Taylor Yvette Johnson,C.L. Shieh,Tse Yu Chen,J. Ramdani,Davis H. Hartman,Daniel Schwartz,A Hollenberg	1996	14
15	AlGaAs/GaInP heterojunction tunnel diode AIP conference proceedings ·Donghwi Jung,C. A. Parker,J. Ramdani,Felix Fuge	1992	1
16	Low-temperature growth of high resistivity GaP by gas-source molecular beam epitaxy Applied Physics Letters ·J. Ramdani,夏莉娜,М.Л. Лимонтова,N. A. El-Masry,S. M. Bedair	1992	8
17	Fabrication of GaAs photodiode using laser selective area epitaxy Applied Physics Letters ·程怀哲,J. C. Roberts,J. Ramdani,S. M. Bedair,Tohada M. AL-Nosh,Jean‐Pierre Vilcot,D. Décoster	1991	10
18	Laser selective area epitaxy of GaAs metal-semiconductor-field-effect transistor Applied Physics Letters ·Irfan Nurfathin Hadirana,J. C. Roberts,J. Ramdani,S. M. Bedair	1991	7
19	High Quality GaAs on Soi by MOCVD MRS Proceedings ·N.H. Karam,V. E. Haven,S. M. Vernon,J. Ramdani,N. A. El-Masry,N. M. Haegel	1989	1
20	Planar monolithic integration of a GaAs photoconductor and a GaAs field-effect transistor Electronics Letters ·D. Décoster,Jean‐Pierre Vilcot,M. Constant,J. Ramdani,Teresa Vega,Héctor M. Díaz-Alejo Guerrero	1986	8

About J. Ramdani

J. Ramdani is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Instrumentation and Condensed Matter Physics, having authored 43 papers that have together received 1.3k indexed citations. Recurring topics across this work include Semiconductor materials and devices (27 papers), Electronic and Structural Properties of Oxides (19 papers), Semiconductor Quantum Structures and Devices (16 papers), Photonic and Optical Devices (7 papers), Semiconductor Lasers and Optical Devices (7 papers), Ferroelectric and Piezoelectric Materials (7 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers) and Ferroelectric and Negative Capacitance Devices (5 papers). The work is most often cited by research in Materials Chemistry (940 citations), Electrical and Electronic Engineering (1.0k citations), Electronic, Optical and Magnetic Materials (218 citations), Atomic and Molecular Physics, and Optics (230 citations) and Condensed Matter Physics (71 citations). J. Ramdani has collaborated with scholars based in United States and France. Frequent co-authors include K. Eisenbeiser, Zhiyi Yu, R. Droopad, J. Curless, Ravi Droopad, J. Finder, C. Overgaard, Yong Liang, W. J. Ooms and J. A. Hallmark. Their work appears in journals such as Applied Physics Letters, Electronics Letters, Journal of Applied Physics, Journal of Crystal Growth and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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