J. K. Klingert

698 total citations
26 papers, 578 citations indexed

About

J. K. Klingert is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, J. K. Klingert has authored 26 papers receiving a total of 578 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Atomic and Molecular Physics, and Optics, 19 papers in Electrical and Electronic Engineering and 6 papers in Condensed Matter Physics. Recurrent topics in J. K. Klingert's work include Semiconductor Quantum Structures and Devices (16 papers), Semiconductor materials and devices (13 papers) and Semiconductor materials and interfaces (9 papers). J. K. Klingert is often cited by papers focused on Semiconductor Quantum Structures and Devices (16 papers), Semiconductor materials and devices (13 papers) and Semiconductor materials and interfaces (9 papers). J. K. Klingert collaborates with scholars based in United States and Germany. J. K. Klingert's co-authors include R. M. Lum, M. G. Lamont, D. W. Kisker, B. V. Dutt, F. A. Stevie, B. A. Davidson, T.D. Harris, A. K. Srivastava, J.L. Zyskind and D. M. Tennant and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

J. K. Klingert

25 papers receiving 533 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. K. Klingert United States 15 446 417 154 98 62 26 578
M. G. Lamont United States 12 354 0.8× 464 1.1× 178 1.2× 85 0.9× 73 1.2× 18 579
P. J. Lemonias United States 18 694 1.6× 563 1.4× 184 1.2× 141 1.4× 74 1.2× 51 812
S.H. Li United States 8 234 0.5× 213 0.5× 123 0.8× 64 0.7× 57 0.9× 9 362
D.J. Ashen United Kingdom 8 584 1.3× 645 1.5× 278 1.8× 86 0.9× 56 0.9× 8 798
B. de Crémoux France 16 637 1.4× 556 1.3× 110 0.7× 41 0.4× 46 0.7× 48 742
M. Heyen Germany 15 614 1.4× 565 1.4× 189 1.2× 151 1.5× 60 1.0× 37 772
T. Nakanisi Japan 11 652 1.5× 661 1.6× 168 1.1× 119 1.2× 47 0.8× 23 767
Katsumi Nagaoka Japan 10 272 0.6× 472 1.1× 246 1.6× 150 1.5× 113 1.8× 32 650
M. A. A. Pudensi United States 11 271 0.6× 268 0.6× 154 1.0× 69 0.7× 66 1.1× 17 489
S. Fukatsu Japan 10 426 1.0× 511 1.2× 280 1.8× 125 1.3× 135 2.2× 16 649

Countries citing papers authored by J. K. Klingert

Since Specialization
Citations

This map shows the geographic impact of J. K. Klingert's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. K. Klingert with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. K. Klingert more than expected).

Fields of papers citing papers by J. K. Klingert

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. K. Klingert. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. K. Klingert. The network helps show where J. K. Klingert may publish in the future.

Co-authorship network of co-authors of J. K. Klingert

This figure shows the co-authorship network connecting the top 25 collaborators of J. K. Klingert. A scholar is included among the top collaborators of J. K. Klingert based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. K. Klingert. J. K. Klingert is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lum, R. M. & J. K. Klingert. (1991). Alternative group V precursors for CVD applications. Journal of Crystal Growth. 107(1-4). 290–296. 35 indexed citations
2.
Lum, R. M., et al.. (1990). High performance GaAs MESFETs grown on InP substrates by MOCVD using tertiarybutylarsine. Electronics Letters. 26(7). 482–484. 1 indexed citations
3.
Lum, R. M., J. K. Klingert, & F. A. Stevie. (1990). Controlled doping of GaAs films grown with tertiarybutylarsine. Journal of Applied Physics. 67(10). 6507–6512. 11 indexed citations
4.
Lum, R. M., J. K. Klingert, & D. W. Kisker. (1989). Effects of methylarsine homologs (CH3)nAsH3−n on the metalorganic vapor-phase epitaxy of GaAs. Journal of Applied Physics. 66(2). 652–655. 14 indexed citations
5.
Schnoes, M. Lamont, T.D. Harris, W. S. Hobson, R. M. Lum, & J. K. Klingert. (1989). Near Gap Photoluminescence of GaAs Grown Directly on InP. MRS Proceedings. 145. 1 indexed citations
6.
Lum, R. M. & J. K. Klingert. (1989). Thermochemistry of alkylarsine compounds used as arsenic precursors in metalorganic vapor phase epitaxy. Journal of Applied Physics. 66(8). 3820–3823. 23 indexed citations
7.
Lum, R. M., J. K. Klingert, D. W. Kisker, et al.. (1988). Investigation of carbon incorporation in GaAs using13C-enriched trimethylarsenic and13Ch4. Journal of Electronic Materials. 17(2). 101–104. 59 indexed citations
8.
Wilson, Barbara A., Carl E. Bonner, Robert C. Miller, et al.. (1988). Photoluminescence studies of heteroepitaxial gaas on si. Journal of Electronic Materials. 17(2). 115–119. 18 indexed citations
9.
Lum, R. M., J. K. Klingert, R. B. Bylsma, et al.. (1988). Effects of misfit dislocations and thermally induced strain on the film properties of heteroepitaxial GaAs on Si. Journal of Applied Physics. 64(12). 6727–6732. 31 indexed citations
10.
Lum, R. M., et al.. (1988). 13C isotopic labeling studies of growth mechanisms in the metalorganic vapor phase epitaxy of GaAs. Journal of Crystal Growth. 93(1-4). 120–126. 41 indexed citations
11.
Lum, R. M., J. K. Klingert, & M. G. Lamont. (1988). Comparison of alternate As-sources to arsine in the MOCVD growth of GaAs. Journal of Crystal Growth. 89(1). 137–142. 44 indexed citations
12.
Harris, T.D., M. G. Lamont, R. Sauer, R. M. Lum, & J. K. Klingert. (1988). Near-gap photoluminescence of GaAs grown directly on silicon. Journal of Applied Physics. 64(10). 5110–5116. 21 indexed citations
13.
Lum, R. M., J. K. Klingert, B. A. Davidson, & M. G. Lamont. (1987). Improved MOCVD Growth of GaAs on Si. MRS Proceedings. 91. 2 indexed citations
14.
Wilson, Barbara A., Carl E. Bonner, T.D. Harris, et al.. (1987). Low-Temperature Photoluminescence of Mocvd GaAs Grown Directly on Si. MRS Proceedings. 91. 11 indexed citations
15.
Lum, R. M., J. K. Klingert, & M. G. Lamont. (1987). Use of tertiarybutylarsine in the metalorganic chemical vapor deposition growth of GaAs. Applied Physics Letters. 50(5). 284–286. 88 indexed citations
16.
Lum, R. M., J. K. Klingert, B. A. Davidson, & M. G. Lamont. (1987). Improvements in the heteroepitaxy of GaAs on Si. Applied Physics Letters. 51(1). 36–38. 47 indexed citations
17.
Chan, Eric Y., M A Awal, El-Hang Lee, R. M. Lum, & J. K. Klingert. (1986). Electronic and optoelectronic characterization of Au Schottky barrier contacts on MOCVD grown (1) GaAs/Ge, (2) GaAs/Ge/Si and (3) GaAs/Si. 96–99. 3 indexed citations
18.
Srivastava, A. K., J.L. Zyskind, R. M. Lum, B. V. Dutt, & J. K. Klingert. (1986). Electrical characteristics of InAsSb/GaSb heterojunctions. Applied Physics Letters. 49(1). 41–43. 38 indexed citations
19.
Lum, R. M., J. K. Klingert, & B. V. Dutt. (1986). An integrated laboratory-reactor MOCVD safety system. Journal of Crystal Growth. 75(3). 421–428. 18 indexed citations
20.
Myers, Clifford E., et al.. (1985). Vaporization Behavior of Chromium Phosphides: The Solid Two‐Phase Regions , , and. Journal of The Electrochemical Society. 132(1). 236–238. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by M. G. Lamont Breakdown of academic impact, for papers by P. J. Lemonias Breakdown of academic impact, for papers by S.H. Li Breakdown of academic impact, for papers by D.J. Ashen Breakdown of academic impact, for papers by B. de Crémoux Breakdown of academic impact, for papers by M. Heyen Breakdown of academic impact, for papers by T. Nakanisi Breakdown of academic impact, for papers by Katsumi Nagaoka Breakdown of academic impact, for papers by M. A. A. Pudensi Breakdown of academic impact, for papers by S. Fukatsu
Rankless by CCL
2026