Akio Nishida

2.2k total citations
115 papers, 1.8k citations indexed

About

Akio Nishida is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Akio Nishida has authored 115 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 91 papers in Electrical and Electronic Engineering, 33 papers in Materials Chemistry and 26 papers in Biomedical Engineering. Recurrent topics in Akio Nishida's work include Semiconductor materials and devices (62 papers), Advancements in Semiconductor Devices and Circuit Design (56 papers) and Integrated Circuits and Semiconductor Failure Analysis (35 papers). Akio Nishida is often cited by papers focused on Semiconductor materials and devices (62 papers), Advancements in Semiconductor Devices and Circuit Design (56 papers) and Integrated Circuits and Semiconductor Failure Analysis (35 papers). Akio Nishida collaborates with scholars based in Japan, United States and South Korea. Akio Nishida's co-authors include Takaaki Tsunomura, Toshiro Hiramoto, Kiyokazu Nakagawa, Atsushi Hiraiwa, Eiichi Murakami, Fumiko Yano, Shiro Kamohara, Yasuhiko Kohtoku, Yasuyoshi Nagai and Koji Inoue and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Catalysis Today.

In The Last Decade

Akio Nishida

110 papers receiving 1.7k citations

Peers

Akio Nishida
T.S. Cale United States
Derren Dunn United States
Scott R. Summerfelt United States
T.S. Cale United States
Akio Nishida
Citations per year, relative to Akio Nishida Akio Nishida (= 1×) peers T.S. Cale

Countries citing papers authored by Akio Nishida

Since Specialization
Citations

This map shows the geographic impact of Akio Nishida's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Akio Nishida with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Akio Nishida more than expected).

Fields of papers citing papers by Akio Nishida

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Akio Nishida. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Akio Nishida. The network helps show where Akio Nishida may publish in the future.

Co-authorship network of co-authors of Akio Nishida

This figure shows the co-authorship network connecting the top 25 collaborators of Akio Nishida. A scholar is included among the top collaborators of Akio Nishida based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Akio Nishida. Akio Nishida is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Takamizawa, Hisashi, Bin Han, Yasuo Shimizu, et al.. (2016). Influence of laser power on atom probe tomographic analysis of boron distribution in silicon. Ultramicroscopy. 173. 58–63. 23 indexed citations
2.
Hiraiwa, Atsushi & Akio Nishida. (2011). Image-Noise Effect on Discrete Power Spectrum of Line-Edge and Line-Width Roughness. Japanese Journal of Applied Physics. 50(1R). 16602–16602. 6 indexed citations
3.
Takeuchi, Kiyoshi, et al.. (2011). Proposal of a model for increased NFET random fluctuations. 192–193. 1 indexed citations
4.
Shimizu, Yasuo, Hisashi Takamizawa, Koji Inoue, et al.. (2011). Impact of carbon coimplantation on boron behavior in silicon: Carbon–boron coclustering and suppression of boron diffusion. Applied Physics Letters. 98(23). 21 indexed citations
5.
Hiraiwa, Atsushi & Akio Nishida. (2010). Statistical-noise effect on discrete power spectrum of line-edge and line-width roughness. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 28(6). 1132–1137. 18 indexed citations
6.
Kumar, A. Senthil, T. Mizutani, Takaaki Tsunomura, et al.. (2010). Origin of “current-onset voltage” variability in scaled MOSFETs. 1–2. 11 indexed citations
7.
Inoue, Koji, Fumiko Yano, Akio Nishida, et al.. (2009). Dopant distributions in n-MOSFET structure observed by atom probe tomography. Ultramicroscopy. 109(12). 1479–1484. 73 indexed citations
8.
Terada, Kazuo, et al.. (2009). Measurement of MOSFET C-V Curve Variation Using CBCM Method. 81–84. 10 indexed citations
9.
Hiraiwa, Atsushi & Akio Nishida. (2009). Discrete power spectrum of line width roughness. Journal of Applied Physics. 106(7). 39 indexed citations
10.
Inoue, Koji, Fumiko Yano, Akio Nishida, et al.. (2008). Three dimensional characterization of dopant distribution in polycrystalline silicon by laser-assisted atom probe. Applied Physics Letters. 93(13). 19 indexed citations
11.
Ogiso, Hisato, et al.. (2008). Scanning capacitance microscopy study of carrier depletion within grains of n ‐type polycrystalline silicon. Surface and Interface Analysis. 40(6-7). 1117–1121. 2 indexed citations
12.
Tsunomura, Takaaki, Akio Nishida, Kiyoshi Takeuchi, et al.. (2006). A new methodology for evaluating V T variability considering dopant depth profile. Symposium on VLSI Technology. 116–117. 2 indexed citations
13.
Hosokawa, Takashi, Michele Dei, Akio Nishida, et al.. (2004). Soft error free, low power and low cost superSRAM with 0.98 /spl mu/m/sup 2/ cell by utilizing existing 0.15 /spl mu/m-DRAM process. 232–233. 5 indexed citations
14.
Kamohara, Shiro, Tomohiro Ohuchi, Kikuo Okuyama, et al.. (2002). A new extraction method of device parameters for mass production E-T data analysis. 43–46.
15.
Nishida, Akio, et al.. (2002). Preparation of PZT/PSZT Multilayer by Hydrothermal Method.. Journal of the Ceramic Society of Japan. 110(1284). 766–771.
16.
Fukatsu, S., Noritaka Usami, Y. Shiraki, Akio Nishida, & Kiyokazu Nakagawa. (1993). High-temperature operation of strained Si0.65Ge0.35/Si(111) p-type multiple-quantum-well light-emitting diode grown by solid source Si molecular-beam epitaxy. Applied Physics Letters. 63(7). 967–969. 22 indexed citations
17.
Fukatsu, S., Noritaka Usami, Y. Shiraki, Akio Nishida, & Kiyokazu Nakagawa. (1993). Observation of electroluminescence above room temperature in strained p-type Si0.65Ge0.35/Si(111) multiple quantum wells. Journal of Crystal Growth. 127(1-4). 1083–1087. 4 indexed citations
18.
Nishida, Akio, et al.. (1992). Grain Size Effect on Mechanical Strength of MgO-ZrO<sub>2</sub> Composite Ceramics. Journal of the Ceramic Society of Japan. 100(1158). 191–195. 6 indexed citations
19.
Murakami, Eiichi, et al.. (1991). Influence of Strain on Electrical Properties of the Ge Channel in the Modulation-Doped p-Si0.5Ge0.5/Ge/Si1-xGex Heterostructure. Japanese Journal of Applied Physics. 30(2A). L163–L163. 5 indexed citations
20.
Miyao, Masanobu, et al.. (1991). High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructure. Journal of Crystal Growth. 111(1-4). 912–915. 64 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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