Jixuan Wu

1.1k total citations
86 papers, 773 citations indexed

About

Jixuan Wu is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computer Networks and Communications. According to data from OpenAlex, Jixuan Wu has authored 86 papers receiving a total of 773 indexed citations (citations by other indexed papers that have themselves been cited), including 71 papers in Electrical and Electronic Engineering, 29 papers in Materials Chemistry and 16 papers in Computer Networks and Communications. Recurrent topics in Jixuan Wu's work include Ferroelectric and Negative Capacitance Devices (47 papers), Advanced Memory and Neural Computing (38 papers) and Semiconductor materials and devices (35 papers). Jixuan Wu is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (47 papers), Advanced Memory and Neural Computing (38 papers) and Semiconductor materials and devices (35 papers). Jixuan Wu collaborates with scholars based in China, Japan and Singapore. Jixuan Wu's co-authors include Jiezhi Chen, Masaharu Kobayashi, Toshiro Hiramoto, Xuepeng Zhan, Takuya Saraya, Fei Mo, F. M. Peeters, Yen-Hsun Huang, Hasan Şahin and Sefaattin Tongay and has published in prestigious journals such as Applied Physics Letters, Advanced Functional Materials and Physical Review B.

In The Last Decade

Jixuan Wu

77 papers receiving 758 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Jixuan Wu China	14	630	403	78	57	57	86	773
Shosuke Fujii Japan	15	706 1.1×	238 0.6×	48 0.6×	41 0.7×	55 1.0×	53	748
Kai‐Shin Li Taiwan	13	739 1.2×	302 0.7×	51 0.7×	20 0.4×	59 1.0×	36	804
Xiaoyong Xue China	15	587 0.9×	154 0.4×	80 1.0×	35 0.6×	47 0.8×	86	716
Sven Beyer Germany	19	1.3k 2.0×	469 1.2×	85 1.1×	24 0.4×	68 1.2×	48	1.3k
Stefan Dünkel Germany	16	1.1k 1.7×	400 1.0×	78 1.0×	22 0.4×	53 0.9×	37	1.1k
Tsung‐Ta Wu Taiwan	13	469 0.7×	181 0.4×	49 0.6×	23 0.4×	53 0.9×	25	507
Mostafizur Rahman United States	11	304 0.5×	143 0.4×	26 0.3×	24 0.4×	63 1.1×	52	420
Pei-Ying Du Taiwan	15	527 0.8×	217 0.5×	34 0.4×	154 2.7×	41 0.7×	55	591
Hsiang-Lan Lung Taiwan	10	566 0.9×	300 0.7×	85 1.1×	45 0.8×	27 0.5×	32	631
Wenhao Chen United States	14	572 0.9×	131 0.3×	40 0.5×	28 0.5×	13 0.2×	38	678

Countries citing papers authored by Jixuan Wu

Since Specialization

Citations

This map shows the geographic impact of Jixuan Wu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jixuan Wu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jixuan Wu more than expected).

Fields of papers citing papers by Jixuan Wu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jixuan Wu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jixuan Wu. The network helps show where Jixuan Wu may publish in the future.

Co-authorship network of co-authors of Jixuan Wu

This figure shows the co-authorship network connecting the top 25 collaborators of Jixuan Wu. A scholar is included among the top collaborators of Jixuan Wu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jixuan Wu. Jixuan Wu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Yang, Guo‐Sheng, Meng Zhang, Peng Guo, et al.. (2025). High-Precision Error Bit Prediction for 3D QLC NAND Flash Memory: Observations, Analysis, and Modeling. IEEE Transactions on Computers. 74(4). 1392–1404. 1 indexed citations

Zhang, Meng, Xuepeng Zhan, Peng Guo, et al.. (2025). Retention Accelerated Testing for 3-D QLC nand Flash Memory: Characterization, Analysis, and Modeling. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 44(7). 2779–2788. 1 indexed citations

Li, Yutao, Jingsi Qiao, Chengji Jin, et al.. (2025). A Physics-Based Compact Model for IGZO Channel FET Toward Subthreshold Characteristic Dependent Memory Application. IEEE Transactions on Electron Devices. 72(5). 2390–2398. 1 indexed citations

Feng, Yang, Zijie Zheng, Chen Sun, et al.. (2025). Unveiling Ferroelectric HZO Cryogenic Performance (4–300 K): Kinetic Barrier Engineering and Underlying Mechanism. IEEE Transactions on Electron Devices. 72(4). 1788–1794. 1 indexed citations

Wang, Hua, Yang Feng, Zheng Chai, et al.. (2024). A 3D MCAM architecture based on flash memory enabling binary neural network computing for edge AI. Science China Information Sciences. 67(12).

Zhang, Dong, Zijie Zheng, Chen Sun, et al.. (2024). Unveiling Cryogenic Performance (4 to 300 K) Towards Ultra-Thin Ferroelectric HZO: Novel Kinetic Barrier Engineering and Underlying Mechanism. 1–2. 5 indexed citations

Sun, Chen, Zijie Zheng, Yue Chen, et al.. (2024). First Demonstration of BEOL-Compatible 3D Vertical FeNOR. 1–2. 7 indexed citations

Li, Xiaopeng, Lu Tai, Pengpeng Sang, et al.. (2024). Imprint-Correlated Retention Loss in Hf₀.₅Zr₀.₅O₂ Ferroelectric Thin Film Through Wide-Temperature Characterizations. IEEE Transactions on Electron Devices. 71(9). 5361–5366. 4 indexed citations

Sang, Pengpeng, Lu Tai, Xiaopeng Li, et al.. (2024). Polarization switching pathways of ferroelectric Zr-doped HfO2 based on the first-principles calculation. Applied Physics Letters. 124(9). 10 indexed citations

10.

Tai, Lu, Xiaopeng Li, Pengpeng Sang, et al.. (2024). Mechanisms for enhanced ferroelectric properties in ultra-thin Hf0.5Zr0.5O2 film under low-temperature, long-term annealing. Applied Physics Letters. 125(9). 2 indexed citations

11.

Feng, Yang, Zhaohui Sun, Chengcheng Wang, et al.. (2024). An Efficient Flash-Based Computing-in-Memory (CIM) Demonstration of High-Precision (32-bit) Nonlinear Partial Differential Equation (PDE) Solver With Ultra-High Endurance and Reliability. IEEE Transactions on Circuits and Systems I Regular Papers. 72(7). 3247–3257.

12.

Feng, Yang, Jing Liu, Xuepeng Zhan, et al.. (2023). Flash-Based Computing-in-Memory Architecture to Implement High-Precision Sparse Coding. Micromachines. 14(12). 2190–2190.

13.

Zhan, Xuepeng, Junshuai Chai, Hao Xu, et al.. (2023). Fully Ferroelectric-FETs Reservoir Computing Network for Temporal and Random Signal Processing. IEEE Transactions on Electron Devices. 70(6). 3372–3377. 13 indexed citations

14.

Tai, Lu, et al.. (2023). Complementary Digital and Analog Resistive Switching Based on AlOₓ Monolayer Memristors for Mixed-Precision Neuromorphic Computing. IEEE Transactions on Electron Devices. 70(8). 4488–4492. 4 indexed citations

15.

Li, Xiaopeng, Wei Wei, Jixuan Wu, et al.. (2022). Experimental investigations on ferroelectric dielectric breakdown in sub-10 nm Hf _0.5 Zr _0.5 O ₂ film through comprehensive TDDB characterizations. Japanese Journal of Applied Physics. 61(10). 101002–101002. 5 indexed citations

16.

Zhao, Guoqing, Wei Wei, Lu Tai, et al.. (2022). Suppressing Interfacial Layer Degradation in $\text{Hf}_{0.5}\text{Zr}_{0.5}\mathrm{O}_{2}$-based FeFETs Using a Pre-erase Strategy during Program/Erase Cycling. 1–2. 2 indexed citations

17.

Wu, Jixuan, Fei Mo, Takuya Saraya, et al.. (2021). Mobility-enhanced FET and Wakeup-free Ferroelectric Capacitor Enabled by Sn-doped InGaZnO for 3D Embedded RAM Application. Symposium on VLSI Technology. 1–2. 1 indexed citations

18.

Ma, Xiaolei, Fei Wang, Wei Wei, et al.. (2020). Impacts of extra charges on trap level modulations at c Si/ a SiO ₂ interface: correlations to leakage current recovery in oxide dielectric. Journal of Physics D Applied Physics. 53(24). 245103–245103. 1 indexed citations

19.

Wu, Jixuan, Jiezhi Chen, & Xiangwei Jiang. (2019). Multiscale simulation of lateral charge loss in Si ₃ N ₄ 3D NAND flash based on density functional theory. Journal of Physics D Applied Physics. 52(39). 395103–395103. 10 indexed citations

20.

Wu, Jixuan, Jiezhi Chen, & Xiangwei Jiang. (2019). Atomistic Study of Lateral Charge Diffusion Degradation During Program/Erase Cycling in 3-D NAND Flash Memory. IEEE Journal of the Electron Devices Society. 7. 626–631. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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