Toru Hiyoshi

792 citations

18 papers · 661 indexed · h-index 12

Electrical and Electronic Engineering top 5%
- Silicon Carbide Semiconductor Technologies 18
- Semiconductor materials and devices 15
- Advancements in Semiconductor Devices and Circuit Design 4
- Electromagnetic Compatibility and Noise Suppression 3
- Thin-Film Transistor Technologies 2
- Electrostatic Discharge in Electronics 1
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces 6
Ceramics and Composites
Electronic, Optical and Magnetic Materials
- Copper Interconnects and Reliability 3
Condensed Matter Physics

Co-authors: Tsunenobu Kimoto Jun Suda Tsunenobu Kimoto Tsunenobu Kimoto Ryoji Kosugi Toshihiko Hayashi Keiji Wãda Takashi Tsuno Kosuke Uchida
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Ceramics and Composites
Partner nations: Japan United States Germany

In The Last Decade

Toru Hiyoshi

18 papers receiving 641 citations

Peers

Countries citing papers authored by Toru Hiyoshi

Since Specialization

Citations

This map shows the geographic impact of Toru Hiyoshi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Toru Hiyoshi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Toru Hiyoshi more than expected).

Fields of papers citing papers by Toru Hiyoshi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Toru Hiyoshi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Toru Hiyoshi. The network helps show where Toru Hiyoshi may publish in the future.

Co-authorship network

The 22 scholars most cited alongside Toru Hiyoshi, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Toru Hiyoshi Line = papers co-authored together Toru Hiyoshi links everyone, so they are left out of the graph.

All Works

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18 of 18 papers shown

#	Work
1	0.97 mΩcm<sup>2</sup>/820 V 4H-SiC Super Junction V-Groove Trench MOSFET Takeyoshi Masuda,Ryoji Kosugi,Toru Hiyoshi	2017	50
2	The Influence of Surface Pit Shape on 4H-SiC MOSFETs Reliability under High Temperature Bias Tests Kosuke Uchida,Toru Hiyoshi,Taro Nishiguchi,Hirofumi Yamamoto,Shinji Matsukawa,Masaki Furumai,Yasuki Mikamura	2016	16
3	Gate oxide reliability of 4H-SiC V-groove trench MOSFET under various stress conditions Toru Hiyoshi,Kosuke Uchida,Mitsuhiko Sakai,Masaki Furumai,Takashi Tsuno,Yasuki Mikamura	2016	13
4	Lifetime estimation of SiC MOSFETs under high temperature reverse bias test Kosuke Uchida,Toru Hiyoshi,Taro Nishiguchi,Hirofumi Yamamoto,Masaki Furumai,Takashi Tsuno,Yasuki Mikamura	2016	5
5	4H-SiC V-Groove Trench MOSFETs with Low Specific On-State Resistance and High Reliability Yasuki Mikamura,Kosuke Uchida,Y. Saitoh,Toru Hiyoshi,Takeyoshi Masuda,Takashi Tsuno	2016	3
6	The optimised design and characterization of 1200 V / 2.0 mΩ cm<sup>2</sup> 4H-SiC V-groove trench MOSFETs Kosuke Uchida,Y. Saitoh,Toru Hiyoshi,Takeyoshi Masuda,Keiji Wãda,Hideto Tamaso,Tomoaki Hatayama,Kenji Hiratsuka,Takashi Tsuno,Masaki Furumai,Yasuki Mikamura	2015	16
7	Static and Dynamic Characteristics of SiC MOSFETs and SBDs for 3.3 kV 400 A Full SiC Modules Keiji Wãda,Hideto Tamaso,Satomi Itoh,Kenji Kanbara,Toru Hiyoshi,Shigenori Toyoshima,Jun Genba,Hitoki Tokuda,Takahiro Sugimura,Hisato Michikoshi,Takashi Tsuno,Yasuki Mikamura	2015	4
8	600 V -Class V-Groove SiC MOSFETs Yu Saito,Masaki Furumai,Toru Hiyoshi,Keiji Wãda,Takeyoshi Masuda,Kenji Hiratsuka,Yasuki Mikamura,Tomoaki Hatayama	2014	10
9	Novel Designed SiC Devices for High Power and High Efficiency Systems Yasuki Mikamura,Kenji Hiratsuka,Takashi Tsuno,Hisato Michikoshi,So Tanaka,Takeyoshi Masuda,Keiji Wãda,Taku Horii,Jun Genba,Toru Hiyoshi,Takeshi Sekiguchi	2014	61
10	A Novel Truncated V-Groove 4H-SiC MOSFET with High Avalanche Breakdown Voltage and Low Specific on-Resistance Takeyoshi Masuda,Keiji Wãda,Toru Hiyoshi,Yu Saito,Hideto Tamaso,Mitsuhiko Sakai,Kenji Hiratsuka,Yasuki Mikamura,M. Nishiguchi,Tomoaki Hatayama,Hiroshi Yano	2014	18
11	Improvement of Interface State and Channel Mobility Using 4H-SiC (0-33-8) Face Toru Hiyoshi,Takeyoshi Masuda,Keiji Wãda,Shin Harada,Yasuo Namikawa	2013	22
12	Effects of Thermal Oxidation on Deep Levels Generated by Ion Implantation into n-Type and p-Type 4H-SiC Koutarou Kawahara,Giovanni Alfieri,Toru Hiyoshi,Gerhard Pensl,Tsunenobu Kimoto	2010	3
13	Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H–SiC epilayers Tsunenobu Kimoto,Toru Hiyoshi,Toshihiko Hayashi,Jun Suda	2010	63
14	Defect Control in Growth and Processing of 4H-SiC for Power Device Applications Tsunenobu Kimoto,Gan Feng,Toru Hiyoshi,Koutarou Kawahara,Masato Noborio,Jun Suda	2010	11
15	Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment Toru Hiyoshi,Tsunenobu Kimoto	2009	117
16	Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation Toru Hiyoshi,Tsunenobu Kimoto	2009	174
17	Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes Toru Hiyoshi,Tsutomu Hori,Jun Suda,Tsunenobu Kimoto	2008	1
18	Simulation and Experimental Study on the Junction Termination Structure for High-Voltage 4H-SiC PiN Diodes Toru Hiyoshi,Tsutomu Hori,Jun Suda,Tsunenobu Kimoto Tsunenobu Kimoto	2008	74

About Toru Hiyoshi

Toru Hiyoshi is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials, having authored 18 papers that have together received 661 indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (18 papers), Semiconductor materials and devices (15 papers), Semiconductor materials and interfaces (6 papers), Advancements in Semiconductor Devices and Circuit Design (4 papers), Copper Interconnects and Reliability (3 papers), Electromagnetic Compatibility and Noise Suppression (3 papers), Thin-Film Transistor Technologies (2 papers) and Electrostatic Discharge in Electronics (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (657 citations), Atomic and Molecular Physics, and Optics (143 citations) and Ceramics and Composites (25 citations). Toru Hiyoshi has collaborated with scholars based in Japan, United States and Germany. Frequent co-authors include Tsunenobu Kimoto, Jun Suda, Tsunenobu Kimoto Tsunenobu Kimoto, Ryoji Kosugi, Toshihiko Hayashi, Keiji Wãda, Takashi Tsuno, Kosuke Uchida, Takeshi Sekiguchi and So Tanaka.

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