Ryoji Kosugi

1.5k total citations
64 papers, 1.3k citations indexed

About

Ryoji Kosugi is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Ryoji Kosugi has authored 64 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 62 papers in Electrical and Electronic Engineering, 17 papers in Electronic, Optical and Magnetic Materials and 9 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Ryoji Kosugi's work include Silicon Carbide Semiconductor Technologies (56 papers), Semiconductor materials and devices (41 papers) and Silicon and Solar Cell Technologies (17 papers). Ryoji Kosugi is often cited by papers focused on Silicon Carbide Semiconductor Technologies (56 papers), Semiconductor materials and devices (41 papers) and Silicon and Solar Cell Technologies (17 papers). Ryoji Kosugi collaborates with scholars based in Japan, United States and South Korea. Ryoji Kosugi's co-authors include Shinsuke Harada, Kenji Fukuda, Junji Senzaki, Kazutoshi Kojima, Hajime Okumura, Yoshiyuki Yonezawa, T. Umeda, Kazuo Arai, S. Suzuki and Seiji Suzuki and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

Ryoji Kosugi

60 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ryoji Kosugi Japan 22 1.2k 243 222 121 62 64 1.3k
M. Wzorek Poland 14 405 0.3× 177 0.7× 157 0.7× 228 1.9× 76 1.2× 71 544
Wook Bahng South Korea 15 732 0.6× 147 0.6× 159 0.7× 183 1.5× 34 0.5× 96 790
Takuma Kobayashi Japan 16 605 0.5× 66 0.3× 159 0.7× 118 1.0× 41 0.7× 77 732
Mau‐Phon Houng Taiwan 17 580 0.5× 224 0.9× 152 0.7× 379 3.1× 113 1.8× 76 781
Valdas Jokubavičius Sweden 15 535 0.5× 114 0.5× 210 0.9× 405 3.3× 70 1.1× 61 747
Wen-Fa Wu Taiwan 15 653 0.6× 90 0.4× 245 1.1× 298 2.5× 175 2.8× 87 841
J.M. Nel South Africa 19 669 0.6× 301 1.2× 215 1.0× 627 5.2× 91 1.5× 71 967
Junji Senzaki Japan 21 1.5k 1.3× 247 1.0× 356 1.6× 192 1.6× 69 1.1× 103 1.6k
Michael Laube Germany 16 567 0.5× 133 0.5× 60 0.3× 283 2.3× 33 0.5× 31 719
Mong-Song Liang Taiwan 16 641 0.6× 78 0.3× 220 1.0× 162 1.3× 41 0.7× 51 715

Countries citing papers authored by Ryoji Kosugi

Since Specialization
Citations

This map shows the geographic impact of Ryoji Kosugi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ryoji Kosugi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ryoji Kosugi more than expected).

Fields of papers citing papers by Ryoji Kosugi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ryoji Kosugi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ryoji Kosugi. The network helps show where Ryoji Kosugi may publish in the future.

Co-authorship network of co-authors of Ryoji Kosugi

This figure shows the co-authorship network connecting the top 25 collaborators of Ryoji Kosugi. A scholar is included among the top collaborators of Ryoji Kosugi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ryoji Kosugi. Ryoji Kosugi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kishishita, T., Y. Fujita, Y. Fukao, et al.. (2025). Prototype of SiC beam monitor for the COMET experiment at J-PARC. Journal of Instrumentation. 20(2). C02016–C02016.
2.
Kishishita, T., Ryoji Kosugi, Y. Fujita, et al.. (2023). Hybrid SiC Pixel Detector for Charged-Particle Beam Monitor. IEEE Transactions on Nuclear Science. 70(6). 1210–1214.
3.
Senzaki, Junji, Ryoji Kosugi, K. Masumoto, et al.. (2022). Influence of SiC epitaxial wafer quality on yield of 1.2kV SiC-DMOSFETs. P63–1. 5 indexed citations
4.
Mochizuki, Kazuhiro, et al.. (2019). Gibbs–Thomson effect on aluminum doping during trench-filling epitaxial growth of 4H-SiC. Japanese Journal of Applied Physics. 58(5). 51009–51009. 2 indexed citations
5.
Mochizuki, Kazuhiro, Ryoji Kosugi, Yoshiyuki Yonezawa, & Hajime Okumura. (2019). Selection of ion species suited for channeled implantation to be used in multi-epitaxial growth for SiC superjunction devices. Japanese Journal of Applied Physics. 58(5). 50905–50905. 11 indexed citations
6.
Ji, Shiyang, Ryoji Kosugi, Kazutoshi Kojima, et al.. (2019). A Study of CVD Growth Parameters to Fill 50-μm-Deep 4H-SiC Trenches. Materials science forum. 963. 131–135. 2 indexed citations
7.
Ji, Shiyang, Ryoji Kosugi, Kazutoshi Kojima, et al.. (2018). CVD Filling of Narrow Deep 4H-SiC Trenches in a Quasi-Selective Epitaxial Growth Mode. Materials science forum. 924. 116–119. 3 indexed citations
8.
Umeda, T., Mitsuo Okamoto, Shinobu Onoda, et al.. (2018). Oxidation-Process Dependence of Single Photon Sources Embedded in 4H-SiC MOSFETs. Materials science forum. 924. 281–284. 2 indexed citations
9.
Ji, Shiyang, Ryoji Kosugi, Kazutoshi Kojima, et al.. (2017). An empirical growth window concerning the input ratio of HCl/SiH4gases in filling 4H-SiC trench by CVD. Applied Physics Express. 10(5). 55505–55505. 15 indexed citations
10.
11.
Ji, Shiyang, Kazutoshi Kojima, Ryoji Kosugi, et al.. (2015). Influence of growth pressure on filling 4H-SiC trenches by CVD method. Japanese Journal of Applied Physics. 55(1S). 01AC04–01AC04. 12 indexed citations
12.
Kosugi, Ryoji, Kazutoshi Kojima, Sachiko Itoh, et al.. (2014). Development of SiC Super-Junction (SJ) Devices by Multi-Epitaxial Growth. Materials science forum. 778-780. 845–850. 21 indexed citations
13.
Kosugi, Ryoji, Kazutoshi Kojima, Sachiko Itoh, et al.. (2013). Development of SiC Super-Junction (SJ) Device by Deep Trench-Filling Epitaxial Growth. Materials science forum. 740-742. 785–788. 28 indexed citations
14.
Kojima, Kazutoshi, et al.. (2013). Filling of Deep Trench by Epitaxial SiC Growth. Materials science forum. 740-742. 793–796. 16 indexed citations
15.
Umeda, T., Yoshihiro Sato, Ryoji Kosugi, et al.. (2012). SiC MOS Interface States: Similarity and Dissimilarity from Silicon. ECS Meeting Abstracts. MA2012-02(31). 2620–2620. 1 indexed citations
16.
Nonaka, Hidehiko, Shingo Ichimura, Ryoji Kosugi, Kenji Fukuda, & Kazuo Arai. (2008). . Journal of the Vacuum Society of Japan. 51(3). 221–223. 1 indexed citations
17.
18.
Harada, Shinsuke, Ryoji Kosugi, Junji Senzaki, et al.. (2002). Relationship between channel mobility and interface state density in SiC metal–oxide–semiconductor field-effect transistor. Journal of Applied Physics. 91(3). 1568–1571. 69 indexed citations
19.
Kosugi, Ryoji, Won-Ju Cho, Kenji Fukuda, Kazuo Arai, & Seiji Suzuki. (2002). High-temperature post-oxidation annealing on the low-temperature oxide/4H-SiC(0001). Journal of Applied Physics. 91(3). 1314–1317. 10 indexed citations
20.
Harada, Shinsuke, Ryoji Kosugi, Junji Senzaki, et al.. (2000). Temperature dependences of channel mobility and threshold voltage in 4H- and 6H-SiC MOSFETs. MRS Proceedings. 640. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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